Gallium arsenide pixel detectors

GaAs detectors can be fabricated with bidimensional single-sided electrode segmentation. They have been successfully bonded using flip-chip technology to the Omega-3 silicon read-out chip. We present here the design features of the GaAs pixel detectors and results from a test performed at the CERN S...

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Bibliographic Details
Published in:	Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment Vol. 410; no. 1; pp. 6 - 11
Main Authors:	Bates, R, Campbell, M, Cantatore, E, D'Auria, S, DaVià, C, del Papa, C, Heijne, E.M, Middelkamp, P, O'Shea, V, Raine, C, Ropotar, I, Scharfetter, L, Smith, K, Snoeys, W
Format:	Journal Article
Language:	English
Published:	Elsevier B.V 01-06-1998
Online Access:	Get full text
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Summary:	GaAs detectors can be fabricated with bidimensional single-sided electrode segmentation. They have been successfully bonded using flip-chip technology to the Omega-3 silicon read-out chip. We present here the design features of the GaAs pixel detectors and results from a test performed at the CERN SpS with a 120 GeV π − beam. The detection efficiency was 99.2% with a nominal threshold of 5000 e −.
ISSN:	0168-9002 1872-9576
DOI:	10.1016/S0168-9002(98)00094-1