Search Results - "Haynes, T.E."

Hall effect and Raman analysis of residual damage and free electron concentration in Si-implanted GaAs: a quest for better doping efficiency by Desnica-Franković, I.D., Desnica, U.V., Furić, K., Wagner, J., Haynes, T.E.

“…To tackle the problem of insufficient electrical activation of Si + dopant in GaAs, we have studied a series of heavily Si-implanted and thermally annealed…”
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Oriented, single domain Fe nanoparticle layers in single crystal yttria-stabilized zirconia by Sorge, K.D., Thompson, J.R., Schulthess, T.C., Modine, F.A., Haynes, T.E., Honda, S.-I., Meldrum, A., Budai, J.D., White, C.W., Boatner, L.A.

“…To create an ensemble of oriented, single crystal particles of iron, Fe ions were implanted into the near-surface region of single crystal yttria-stabilized…”
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The metabolic basis of arginine nutrition and pharmacotherapy by Flynn, N.E, Meininger, C.J, Haynes, T.E, Wu, G

“…As an essential precursor for the synthesis of proteins and other molecules with enormous biological importance (including nitric oxide, urea, ornithine,…”
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Efficient production of silicon-on-insulator films by co-implantation of He+ with H by Agarwal, Aditya, Haynes, T. E., Venezia, V. C., Holland, O. W., Eaglesham, D. J.

“…We have investigated the process of thin film separation by gas ion implantation and wafer bonding, as well as the more basic phenomenon of blistering, on…”
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Mechanism of silicon exfoliation induced by hydrogen/helium co-implantation by Weldon, M. K., Collot, M., Chabal, Y. J., Venezia, V. C., Agarwal, A., Haynes, T. E., Eaglesham, D. J., Christman, S. B., Chaban, E. E.

“…Infrared spectroscopy and secondary ion mass spectrometry are used to elucidate the mechanism by which co-implantation of He with H facilitates the shearing of…”
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Mechanism for the reduction of interstitial supersaturations in MeV-implanted silicon by Venezia, V. C., Haynes, T. E., Agarwal, Aditya, Pelaz, L., Gossmann, H.-J., Jacobson, D. C., Eaglesham, D. J.

“…We demonstrate that the excess vacancies induced by a 1 MeV Si implant reduce the excess interstitials generated by a 40 keV Si implant during thermal…”
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Depth profiling of vacancy clusters in MeV-implanted Si using Au labeling by Venezia, V. C., Eaglesham, D. J., Haynes, T. E., Agarwal, Aditya, Jacobson, D. C., Gossmann, H.-J., Baumann, F. H.

“…A technique for profiling the clustered-vacancy region produced by high-energy ion implantation into silicon is described and tested. This technique takes…”
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Boron-enhanced diffusion of boron from ultralow-energy ion implantation by Agarwal, Aditya, Gossmann, H.-J., Eaglesham, D. J., Herner, S. B., Fiory, A. T., Haynes, T. E.

“…We have investigated the diffusion enhancement mechanism of boron-enhanced diffusion (BED), wherein boron diffusivity is enhanced four to five times over the…”
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Reduction of transient diffusion from 1–5 keV Si+ ion implantation due to surface annihilation of interstitials by Agarwal, Aditya, Gossmann, H.-J., Eaglesham, D. J., Pelaz, L., Jacobson, D. C., Haynes, T. E., Erokhin, Yu. E.

“…The reduction of transient enhanced diffusion (TED) with reduced implantation energy has been investigated and quantified. A fixed dose of 1×1014 cm−2 Si+ was…”
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Interactions of ion-implantation-induced interstitials with boron at high concentrations in silicon by Haynes, T. E., Eaglesham, D. J., Stolk, P. A., Gossmann, H.-J., Jacobson, D. C., Poate, J. M.

“…Ion implantation of Si (60 keV, 1×1014/cm2) has been used to introduce excess interstitials into silicon predoped with high background concentrations of B,…”
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Switchable reflectivity on silicon from a composite VO{sub 2}-SiO{sub 2} protecting layer by Lopez, R., Boatner, L.A., Haynes, T.E., Haglund, R.F. Jr, Feldman, L.C., Department of Physics and Astronomy and Vanderbilt Institute of Nanoscale Science and Engineering, Vanderbilt University, Nashville, Tennessee 37235

“…Surfaces whose reflectivity can be thermally controlled were formed on single crystals of silicon by using ion beams to create a nanocomposite layer consisting…”
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The interstitial fraction of diffusivity of common dopants in Si by Gossmann, H.-J., Haynes, T. E., Stolk, P. A., Jacobson, D. C., Gilmer, G. H., Poate, J. M., Luftman, H. S., Mogi, T. K., Thompson, M. O.

“…The relative contributions of interstitials and vacancies to diffusion of a dopant A in silicon are specified by the interstitial fraction of diffusivity, fA…”
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Damage saturation during high-energy ion implantation of Si[sub 1[minus][ital x]]Ge[sub [ital x]] by Holland, O.W., Haynes, T.E.

“…Saturation of radiation damage during MeV Si[sup +]-ion implantation of unstrained Si[sub 1[minus][ital x]]Ge[sub [ital x]] ([ital x]=0.15,0.50) alloy layers,…”
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Interstitial defects in silicon from 1–5 keV Si+ ion implantation by Agarwal, Aditya, Haynes, Tony E., Eaglesham, David J., Gossmann, Hans-J., Jacobson, Dale C., Poate, John M., Erokhin, Yu. E.

“…Extended defects from 5-, 2-, and 1-keV Si+ ion implantation are investigated by transmission electron microscopy using implantation doses of 1 and 3×1014 cm−2…”
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Damage accumulation during ion implantation of unstrained Si sub 1 minus x Ge sub x alloy layers by Haynes, T.E., Holland, O.W.

“…The growth of damage induced by ion implantation in unstrained Si{sub 1{minus}x}Ge{sub x} epilayers is examined as a function of epilayer composition and of…”
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Use of x-ray microbeams for cross-section depth profiling of MeV ion-implantation-induced defect clusters in Si by Yoon, Mirang, Larson, B. C., Tischler, J. Z., Haynes, T. E., Chung, J.-S., Ice, G. E., Zschack, P.

“…We have used submicron-resolution synchrotron x-ray beams to study the size, type, and depth distribution of ion-implantation-induced defect clusters in Si. A…”
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Transient enhanced diffusion of Sb and B due to MeV silicon implants by Eaglesham, D. J., Haynes, T. E., Gossmann, H.-J., Jacobson, D. C., Stolk, P. A., Poate, J. M.

“…We measure the transient enhanced diffusion of shallow molecular-beam-epitaxy grown marker layers of Sb and B due to deep MeV Si+ ion implants at very high…”
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Implant damage and transient enhanced diffusion in Si by Eaglesham, D.J., Stolk, P.A., Gossmann, H.-J., Haynes, T.E., Poate, J.M.

“…Transmission electron microscopy is used to address two key questions for ion-implant technology in Si. First, how does ion damage influence the diffusion of…”
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Dose rate effects on damage accumulation in Si sup + -implanted gallium arsenide by Haynes, T.E., Holland, O.W.

“…Ion-induced damage accumulation has been measured as a function of ion dose and dose rate following 100 keV Si{sup +} room-temperature implants in GaAs. The…”
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Transient enhanced diffusion from decaborane molecular ion implantation by Agarwal, Aditya, Gossmann, H.-J., Jacobson, D. C., Eaglesham, D. J., Sosnowski, M., Poate, J. M., Yamada, I., Matsuo, J., Haynes, T. E.

“…Transient enhanced diffusion (TED) from implantation of 5 keV B10H14 and 0.5 keV B ions has been quantified and compared for nominal boron doses of 1014 and…”
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