Search Results - "Haynes, T. E."

Enhanced hysteresis in the semiconductor-to-metal phase transition of VO2 precipitates formed in SiO2 by ion implantation by Lopez, R., Boatner, L. A., Haynes, T. E., Haglund, R. F., Feldman, L. C.

“…A strongly enhanced hysteresis with a width of >34 °C has been observed in the semiconductor-to-metal phase transition of submicron-scale VO2 precipitates…”
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Glutamine metabolism to glucosamine is necessary for glutamine inhibition of endothelial nitric oxide synthesis by Wu, G, Haynes, T E, Li, H, Yan, W, Meininger, C J

“…L-Glutamine is a physiological inhibitor of endothelial NO synthesis. The present study was conducted to test the hypothesis that metabolism of glutamine to…”
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Presence of glutamine :fructose-6-phosphate amidotransferase for glucosamine-6-phosphate synthesis in endothelial cells : effects of hyperglycaemia and glutamine by WU, G, HAYNES, T. E, YAN, W, MEININGER, C. J

“…Recent studies show that glucosamine infusion impairs endothelium-dependent blood flow in normoglycaemic rats. The pathophysiological relevance of this…”
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Switchable reflectivity on silicon from a composite VO2-SiO2 protecting layer by Lopez, R., Boatner, L. A., Haynes, T. E., Haglund, R. F., Feldman, L. C.

“…Surfaces whose reflectivity can be thermally controlled were formed on single crystals of silicon by using ion beams to create a nanocomposite layer consisting…”
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Transport properties of the advancing interface ohmic contact to AlGaN/GaN heterostructures by Qiao, D., Yu, L. S., Jia, L., Asbeck, P. M., Lau, S. S., Haynes, T. E.

“…The transport properties of the advancing interface ohmic contact to AlGaN/GaN heterostructure field-effect transistors have been investigated. We found that…”
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The metabolic basis of arginine nutrition and pharmacotherapy by Flynn, N.E, Meininger, C.J, Haynes, T.E, Wu, G

“…As an essential precursor for the synthesis of proteins and other molecules with enormous biological importance (including nitric oxide, urea, ornithine,…”
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Mechanism of silicon exfoliation induced by hydrogen/helium co-implantation by Weldon, M. K., Collot, M., Chabal, Y. J., Venezia, V. C., Agarwal, A., Haynes, T. E., Eaglesham, D. J., Christman, S. B., Chaban, E. E.

“…Infrared spectroscopy and secondary ion mass spectrometry are used to elucidate the mechanism by which co-implantation of He with H facilitates the shearing of…”
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Depth profiling of vacancy clusters in MeV-implanted Si using Au labeling by Venezia, V. C., Eaglesham, D. J., Haynes, T. E., Agarwal, Aditya, Jacobson, D. C., Gossmann, H.-J., Baumann, F. H.

“…A technique for profiling the clustered-vacancy region produced by high-energy ion implantation into silicon is described and tested. This technique takes…”
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Boron-enhanced diffusion of boron from ultralow-energy ion implantation by Agarwal, Aditya, Gossmann, H.-J., Eaglesham, D. J., Herner, S. B., Fiory, A. T., Haynes, T. E.

“…We have investigated the diffusion enhancement mechanism of boron-enhanced diffusion (BED), wherein boron diffusivity is enhanced four to five times over the…”
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Reduction of transient diffusion from 1–5 keV Si+ ion implantation due to surface annihilation of interstitials by Agarwal, Aditya, Gossmann, H.-J., Eaglesham, D. J., Pelaz, L., Jacobson, D. C., Haynes, T. E., Erokhin, Yu. E.

“…The reduction of transient enhanced diffusion (TED) with reduced implantation energy has been investigated and quantified. A fixed dose of 1×1014 cm−2 Si+ was…”
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The interstitial fraction of diffusivity of common dopants in Si by Gossmann, H.-J., Haynes, T. E., Stolk, P. A., Jacobson, D. C., Gilmer, G. H., Poate, J. M., Luftman, H. S., Mogi, T. K., Thompson, M. O.

“…The relative contributions of interstitials and vacancies to diffusion of a dopant A in silicon are specified by the interstitial fraction of diffusivity, fA…”
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Binding energy of vacancies to clusters formed in Si by high-energy ion implantation by Kalyanaraman, R., Haynes, T. E., Holland, O. W., Gossmann, H.-J. L., Rafferty, C. S., Gilmer, G. H.

“…Measurements of the binding energy (Eb) of vacancies to vacancy clusters formed in silicon following high-energy ion implantation are reported. Vacancy…”
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Hall effect and Raman analysis of residual damage and free electron concentration in Si-implanted GaAs: a quest for better doping efficiency by Desnica-Franković, I.D., Desnica, U.V., Furić, K., Wagner, J., Haynes, T.E.

“…To tackle the problem of insufficient electrical activation of Si + dopant in GaAs, we have studied a series of heavily Si-implanted and thermally annealed…”
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Transient enhanced diffusion of Sb and B due to MeV silicon implants by Eaglesham, D. J., Haynes, T. E., Gossmann, H.-J., Jacobson, D. C., Stolk, P. A., Poate, J. M.

“…We measure the transient enhanced diffusion of shallow molecular-beam-epitaxy grown marker layers of Sb and B due to deep MeV Si+ ion implants at very high…”
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Regulatory role of arginase I and II in nitric oxide, polyamine, and proline syntheses in endothelial cells by Li, H, Meininger, C J, Hawker, Jr, J R, Haynes, T E, Kepka-Lenhart, D, Mistry, S K, Morris, Jr, S M, Wu, G

“…Endothelial cells (EC) metabolize L-arginine mainly by arginase, which exists as two distinct isoforms, arginase I and II. To understand the roles of arginase…”
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Dose rate effects on damage accumulation in Si+-implanted gallium arsenide by HAYNES, T. E, HOLLAND, O. W

“…Ion-induced damage accumulation has been measured as a function of ion dose and dose rate following 100 keV Si+ room-temperature implants in GaAs. The dose…”
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Comparative study of implantation-induced damage in GaAs and Ge : temperature and flux dependence by HAYNES, T. E, HOLLAND, O. W

“…Damage accumulation during ion implantation of 100 keV Si+ into GaAs and Ge has been investigated. A comparison is made of the amount of damage created in GaAs…”
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Chemical characterization and purification of the beta subunit of the DNA polymerase III holoenzyme from an overproducing strain by Johanson, K O, Haynes, T E, McHenry, C S

“…We have purified the beta subunit of the DNA polymerase III holoenzyme to homogeneity from an overproducing strain (Blanar, M., Sandler, S., Armengod, M.,…”
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The mechanism of iron gettering in boron-doped silicon by Stolk, P. A., Benton, J. L., Eaglesham, D. J., Jacobson, D. C., Cheng, J.-Y., Poate, J. M., Myers, S. M., Haynes, T. E.

“…High-energy B implantation was used to introduce gettering layers into float-zone Si wafers contaminated with 2×1014 Fe/cm3. Secondary ion mass spectrometry…”
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Transfer of n-type GaSb onto GaAs substrate by hydrogen implantation and wafer bonding by Zheng, Y., Moran, P. D., Guan, Z. F., Lau, S. S., Hansen, D. M., Kuech, T. F., Haynes, T. E., Hoechbauer, T., Nastasi, M.

“…The formation of thin GaSb layers through wafer bonding and transfer onto a semiinsulating GaAs substrate was investigated. GaSb-on-insulator structures,…”
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