Search Results - "Haugen, HK"

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    Subwavelength ripple formation on the surfaces of compound semiconductors irradiated with femtosecond laser pulses by Borowiec, A., Haugen, H. K.

    Published in Applied physics letters (23-06-2003)
    “…High-spatial-frequency periodic structures on the surfaces of InP, GaP, and GaAs have been observed after multiple-pulse femtosecond laser irradiation at…”
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    Developing 1D nanostructure arrays for future nanophotonics by Ruda, Harry, Polanyi, John, Yang, JodySY, Wu, Zhanghua, Philipose, Usha, Xu, Tao, Yang, Susan, Kavanagh, KL, Liu, JQ, Yang, L, Wang, Y, Robbie, Kevin, Yang, J, Kaminska, K, Cooke, DG, Hegmann, FA, Budz, AJ, Haugen, HK

    Published in Nanoscale research letters (26-08-2006)
    “…There is intense and growing interest in one-dimensional (1-D) nanostructures from the perspective of their synthesis and unique properties, especially with…”
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    Transmission and scanning electron microscopy studies of single femtosecond- laser-pulse ablation of silicon by Borowiec, A., MacKenzie, M., Weatherly, G.C., Haugen, H.K.

    “…The final state of the material resulting from laser irradiation of silicon using 130 fs pulses at 790 nm was studied using a number of techniques including…”
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    Wavelength dependence of the single pulse femtosecond laser ablation threshold of indium phosphide in the 400–2050 nm range by Borowiec, A., Tiedje, H.F., Haugen, H.K.

    Published in Applied surface science (30-04-2005)
    “…We present single pulse femtosecond laser ablation threshold measurements of InP obtained by optical, scanning electron, and atomic force microscopy. The…”
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    Experimental studies of Os(-): observation of a bound-bound electric dipole transition in an atomic negative ion by Bilodeau, R C, Haugen, H K

    Published in Physical review letters (17-07-2000)
    “…The first experimental studies of Os(-) reveal the presence of two very strong resonances. One state is a narrow shape resonance lying only 3.52(12) meV above…”
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    Femtosecond laser pulse ablation of GaAs and InP: studies utilizing scanning and transmission electron microscopy by Borowiec, A., MacKenzie, M., Weatherly, G.C., Haugen, H.K.

    “…Single pulse laser ablation of GaAs and InP using 130 fs light pulses at {/content/868H1G0MBBWMWLW5/xxlarge8776.gif}800 nm was studied with various techniques,…”
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    Imaging the strain fields resulting from laser micromachining of semiconductors by Borowiec, A., Bruce, D. M., Cassidy, Daniel T., Haugen, H. K.

    Published in Applied physics letters (14-07-2003)
    “…The residual strain fields resulting from laser micromachining of grooves in indium phosphide with femtosecond and nanosecond light pulses are analyzed using a…”
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    Developing 1D nanostructure arrays for future nanophotonics by Ruda, Harry E., Polanyi, John C., Yang, Jody S.Y., Wu, Zhanghua, Philipose, Usha, Xu, Tao, Yang, Susan, Kavanagh, K.L., Liu, J.Q., Yang, L., Wang, Y., Robbie, Kevin, Yang, J., Kaminska, K., Cooke, D.G., Hegmann, F.A., Budz, A.J., Haugen, H.K.

    Published in Nanoscale research letters (01-12-2006)
    “…There is intense and growing interest in one-dimensional (1-D) nanostructures from the perspective of their synthesis and unique properties, especially with…”
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    Journal Article
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    Wavelength tunable ultrashort pulse generation from a passively mode-locked asymmetric-quantum-well semiconductor laser by Brennan, M. J., Milgram, J. N., Mascher, P., Haugen, H. K.

    Published in Applied physics letters (30-09-2002)
    “…Optical pulses are generated from a passively mode-locked dual asymmetric-quantum-well semiconductor laser mounted in a linear external cavity. The devices are…”
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    Ultrashort optical pulse generation with a mode-locked long-wavelength (1075-1085 nm) InGaAs-GaAs semiconductor laser by Brennan, M.J., Budz, A.J., Robinson, B.J., Mascher, P., Haugen, H.K.

    Published in IEEE photonics technology letters (01-08-2004)
    “…Optical pulses are generated by passive and hybrid mode-locking of a long wavelength (1075-1085 nm) InGaAs-GaAs ridge waveguide laser grown by gas source…”
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    Control of near-threshold detachment cross sections via laser polarization by Bilodeau, R C, Scheer, M, Haugen, H K

    Published in Physical review letters (01-10-2001)
    “…The behavior of near-threshold cross sections for dissociation of a target into a pair of particles, as described by Wigner's threshold law, can depend…”
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    X-ray emission from femtosecond laser micromachining by THØGERSEN, J, BOROWIEC, A, HAUGEN, H. K, MCNEILL, F. E, STRONACH, I. M

    “…We characterize the spectral properties of X-rays generated from selected metal and semiconductor targets when 120-fs laser pulses are focused to intensities…”
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    Dynamical fragmentation of C60 ions by HVELPLUND, P, ANDERSEN, L. H, HAUGEN, H. K, LINDHARD, J, LORENTS, D. C, MALHOTRA, R, RUOFF, R

    Published in Physical review letters (28-09-1992)
    “…The distribution of fragments resulting from collisions between 50-200-keV C60(+) ions and H2 and He is found to follow approximately a simple power law I(m) =…”
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    Studies of two-photon excitation and vacuum ultraviolet fluorescence in Nd:YLF by Dooley, P.W., Thøgersen, J., Gill, J.D., Haugen, H.K., Brooks, R.L.

    Published in Optics communications (01-09-2000)
    “…Two-photon ultraviolet laser excitation of Nd:YLiF 4 was studied via the observation of the vacuum ultraviolet fluorescence from localized states of the 4f 25d…”
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