Search Results - "Haugan, H.J"

Texture and surface analysis of thin-film GaAs on glass formed by pulsed-laser deposition by Erlacher, A., Ullrich, B., Komarova, E.Y., Jaeger, H., Haugan, H.J., Brown, G.J.

“…Thin-film GaAs on glass was formed by ablating n-type GaAs with nano-second pulses at 532nm. The deposition was done in the most straightforward way without…”
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Determination of critical parameters for design of semiconductor hyperbolic metamaterials by Eyink, K.G., Haugan, H.J., Neal, A.T., Mahalingam, K., Pustovit, V., Urbas, A.

“…Hyperbolic metamaterials (HMM) are receiving considerable attention due to their unique properties and are leading to many exciting new application such as…”
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Quantitative study of the effect of deposition temperature on antimony incorporation in InAs/InAsSb superlattices by Haugan, H.J., Mahalingam, K., Szmulowicz, F., Brown, G.J.

“…InAs/InAsSb superlattices (SLs) are being actively explored for infrared detector applications owing to their superior carrier lifetimes. However, antimony…”
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Coherent phonon dynamics in short-period InAs/GaSb superlattices by Noe, G.T., Haugan, H.J., Brown, G.J., Sanders, G.D., Stanton, C.J., Kono, J.

“…► We performed ultrafast spectroscopy studies on InAs/GaSb-based short-period superlattices. ► We observed two types of coherent phonons with fast (1–2ps) and…”
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Control of anion incorporation in the molecular beam epitaxy of ternary antimonide superlattices for very long wavelength infrared detection by Haugan, H.J., Brown, G.J., Elhamri, S., Grazulis, L.

“…Authors discuss how anion incorporation was controlled during the epitaxial growth process to develop InAs/GaInSb superlattice (SL) materials for very long…”
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Growth optimization studies to develop InAs/GaInSb superlattice materials for very long wavelength infrared detection by Haugan, H.J., Brown, G.J., Mahalingam, K., Grazulis, L.

“…In order to develop ternary antimonide-based superlattice (SL) materials for very long wavelength infrared (VLWIR) detection, systematic growth optimization…”
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Calculation of the temperature dependence of the vertical and horizontal mobilities in InAs/GaSb superlattices by Szmulowicz, F., Haugan, H.J., Elhamri, S., Brown, G.J.

“…► Temperature dependence of vertical and horizontal mobilities in InAs/GaSb superlattices was calculated. ► The calculated mobilities are strong functions of…”
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Reprint of "Calculation of the temperature dependence of the vertical and horizontal mobilities in InAs/GaSb superlattices" by Szmulowicz, F., Haugan, H.J., Elhamri, S., Brown, G.J.

“…► Temperature dependence of vertical and horizontal mobilities in InAs/GaSb superlattices was calculated. ► The calculated mobilities are strong functions of…”
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Exploring optimum growth for high quality InAs/GaSb type-II superlattices by Haugan, H.J, Grazulis, L, Brown, G.J, Mahalingam, K, Tomich, D.H

“…Fundamental material issues in the growth of InAs/GaSb type-II superlattice (SL) structures using molecular beam epitaxy (MBE) have been addressed. The effect…”
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Optimizing residual carriers in undoped InAs/GaSb superlattices for high operating temperature mid-infrared detectors by Haugan, H.J., Elhamri, S., Ullrich, B., Szmulowicz, F., Brown, G.J., Mitchel, W.C.

“…The mid-infrared 21 Å InAs/24 Å GaSb superlattices (SLs) designed for the 4 μm cutoff wavelength were grown by molecular beam epitaxy at growth temperatures…”
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InAs/GaSb type-II superlattices for high performance mid-infrared detectors by Haugan, H.J., Brown, G.J., Szmulowicz, F., Grazulis, L., Mitchel, W.C., Elhamri, S., Mitchell, W.D.

“…The superlattice (SL) design parameters of a 50 period InAs/GaSb SL structure with InSb-like interfaces (IFs) were systematically varied around the 26 Å InAs/…”
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Pushing the envelope to the maximum: Short-period InAs/GaSb type-II superlattices for mid-infrared detectors by Haugan, H.J., Szmulowicz, F., Brown, G.J., Ullrich, B., R Munshi, S., Grazulis, L., Mahalingam, K., Fenstermaker, S.T.

“…Using a newly developed envelope function approximation model that includes interface effects, several InAs/GaSb type-II superlattices (SL) for the 4 μm…”
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Optimization of InAs/GaSb type-II superlattices for high performance of photodetectors by Haugan, H.J., Brown, G.J., Grazulis, L., Mahalingam, K., Tomich, D.H.

“…The optimum growth conditions and strain balancing processes have been studied using molecular beam epitaxy (MBE) grown 51 A ̊ InAs/ 40 A ̊ GaSb type-II…”
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Structural and magnetic properties of thin epitaxial Fe films on (1 1 0) GaAs prepared by metalorganic chemical vapor deposition by Haugan, H.J, McCombe, B.D, Mattocks, P.G

“…Iron films have been grown on (1 1 0) GaAs substrates by atmospheric pressure metalorganic chemical vapor deposition at substrate temperatures ( T s) between…”
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Low temperature metalorganic chemical vapor deposition growth of InP using the new precursors pentamethylcyclopentadienylindium(I) and white phosphorus by Haugan, H.J, Yu, W, Lee, S.T, Petrou, A, McCombe, B.D, Brewer, K.S, Lees, J.F, Beachley, O.T

“…Low temperature metalorganic chemical vapor deposition growth of InP has been achieved with previously unexplored indium precursor,…”
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