Search Results - "Hattori, Shuzo"
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Association between transient appetite loss and vitamin B1 deficiency in elderly patients with suspected deficiency
Published in Journal of general and family medicine (01-05-2021)“…Background There is scarce evidence associating vitamin B1 levels and appetite loss duration in elderly patients with suspected B1 deficiency. We aimed to…”
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2
Author reply to what are the clinical signs of thiamine deficiency in elderly patients?
Published in Journal of general and family medicine (01-01-2022)“…To the Editor, Onishi et al. responded productively to our research by adding the importance of the relationship between symptoms and vitamin B1 deficiency…”
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3
Difficulty in Diagnosing and Treating a Prostate Abscess With Bacterial and Fungal Coinfection in an Immunocompromised Patient
Published in Curēus (Palo Alto, CA) (31-01-2022)“…Prostate abscesses often occur in immunocompromised individuals. Contrast-enhanced imaging tests can aid diagnosis; however, they can be difficult to perform…”
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4
Severe fever with thrombocytopenia syndrome complicated with subdural hematoma: A rare case and literature review
Published in Journal of general and family medicine (01-11-2019)“…A 79‐year‐old woman presented with fever and general malaise. Examination revealed hepatic injury, thrombocytopenia, skin lesions, and regional…”
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5
Synchrotron-Radiation-Induced Deposition of Etch-Protecting Film on Si in CF 4 Plasma
Published in Japanese Journal of Applied Physics (01-02-1996)“…Carbonous film was deposited on silicon wafer in CF 4 plasma when the silicon wafer was irradiated by synchrotron radiation (SR). The deposition rate was 183…”
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6
Wide area near afterglow oxygen radical source used as a polymer resist asher
Published in Applied physics letters (02-09-1991)“…An active oxygen plasma of disk shape is used to ash photoresist films with ±5% variation in the uniformity over 15-cm-diam wafers located in a field-free…”
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7
Stress and strain of GaAs on Si grown by MOCVD using strained superlattice intermediate layers and a two-step growth method
Published in Japanese Journal of Applied Physics (01-05-1987)“…The stress and strain of GaAs on Si grown by using strained superlattice intermediate layers and a two-step growth method are characterized by the…”
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Deep Levels in GaAs Grown Using Superlattice Intermediate Layers on Si Substrates by MOCVD
Published in Japanese Journal of Applied Physics (01-10-1986)“…Deep levels in MOCVD-grown GaAs using superlattice intermediate layers on Si substrates were investigated by DLTS. Electron traps at 0.44 and 0.73 eV were…”
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9
Determination of the Penning excitation cross sections of Mg atoms by He, Ne and Ar metastable atoms
Published in Journal of the Physical Society of Japan (01-01-1983)“…The relative Penning excitation rates for the individual Mg(II) states by He(23S) atoms, those by He(21S) atoms and those by Ne(33P) atoms have been measured…”
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10
A Metal Doping Effect in an Electron Beam Sensitive Resist
Published in Japanese Journal of Applied Physics (01-01-1981)Get full text
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11
Penning Excitation Cross Sections for the Individual Zn(II) States by He 21S and He 23S Metastable Atoms
Published in Journal of the Physical Society of Japan (01-01-1982)“…The relative Penning excitation rates for the individual Zn(II) states by He 21S atoms and those by He 23S atoms were measured separately using Penning…”
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12
Emission Properties of Electrodeless Argon Gas Discharge in VUV Region
Published in Japanese Journal of Applied Physics (01-06-1987)“…The dependences of the VUV light intensity from an electrodeless Argon gas discharge on various parameters such as the gas pressure, gas flow rate, input…”
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13
C-Si-O(B) thin film-A possible X-ray mask substrate candidate
Published in Japanese Journal of Applied Physics (01-04-1987)“…The formation of a C-Si-O(B) compound by plasma CVD at an rf frequency of 13.56 MHz is described. B 2 H 6 (5.25 (vol. %) in nitrogen) and CH 4 were the…”
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14
Mechanism of MOCVD growth for GaAs and AlAs
Published in Japanese Journal of Applied Physics (01-01-1984)“…The dependence of the growth rate of MOCVD-grown GaAs and AlAs on the growth temperature and the V/III ratio was investigated. It was found that (1) the growth…”
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15
Electron Beam Vacuum Lithography Using a Plasma Co-Polymerized MMA–TMT Resist
Published in Japanese Journal of Applied Physics (01-01-1982)“…The dry development of an Sn containing electron-beam-sensitive resist produced by plasma polymerization is described. The dry development was performed using…”
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16
Selective MOCVD growth of GaAs on Si substrate with superlattice intermediate layers
Published in Japanese Journal of Applied Physics (01-02-1987)“…GaAs was grown on a Si substrate through a SiO 2 mask using superlattice intermediate layers by MOCVD. Single and poly crystalline GaAs layers were grown on…”
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17
Vacuum ultraviolet light source using electrodeless discharge
Published in Japanese Journal of Applied Physics (1986)“…A new type of vacuum ultraviolet light source employing electrodeless pulse discharge was studied, and the discharge conditions needed to obtain stable VUV…”
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18
A Laser Scanner Using Stacked Piezoelectric Ceramic Actuator
Published in Japanese Journal of Applied Physics (01-01-1986)“…A laser scanner using the displacement of two stacked piezo-electric ceramic actuators (Piezo-Stacks) has been developed. This scanner is capable of…”
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19
Ion Sampling Study in Gaseous Plasmas Using a Simple QMF
Published in Japanese Journal of Applied Physics (01-02-1983)“…A simply-constructed Quadrupole Mass Filter (QMF) was used to study the plasma ionic constituents in the positive column of a dc discharge. The instrumental…”
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20
Mass spectrometry ion sampling on the positive column DC discharge plasmas
Published in Japanese Journal of Applied Physics (01-01-1983)“…The quadrupole mass filter (QMF) calibration constant of ion sampling from the positive column of a dc discharge plasma was studied as a function of various…”
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