Search Results - "Hatalis, M.K."
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Polysilicon TFT technology for active matrix OLED displays
Published in IEEE transactions on electron devices (01-05-2001)“…The integration of active matrix polysilicon TFT technology with organic light emitting diode (OLED) displays has been investigated with the goal of producing…”
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2
Towards a palladium micro-membrane for the water gas shift reaction: microfabrication approach and hydrogen purification results
Published in Journal of microelectromechanical systems (01-02-2003)“…A novel palladium-based micromembrane is reported that can be used for hydrogen gas separation in a miniature fuel processor for micro fuel cells. The…”
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3
Electronic structure of CeF3 and TbF3 by valence-band XPS and theory
Published in The Journal of physics and chemistry of solids (01-09-2009)Get full text
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4
Leakage current mechanism in sub-micron polysilicon thin-film transistors
Published in IEEE transactions on electron devices (01-08-1996)“…We have studied leakage current in sub-micron p-channel polysilicon thin-film-transistor. Our study revealed that thermionic emission is the dominant mechanism…”
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5
Poly-Si thin-film transistors on steel substrates
Published in IEEE electron device letters (01-02-2000)“…We report the successful fabrication of poly-Si thin-film transistors (TFTs) on stainless steel substrates. The TFTs were fabricated on a 500 μm thick polished…”
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6
Polysilicon thin-film transistors using self-aligned cobalt and nickel silicide source and drain contacts
Published in IEEE electron device letters (01-07-1999)“…Polysilicon thin-film transistors (TFTs) with island thickness of 20 and 70 nm were fabricated with self-aligned cobalt and nickel silicide contacts to the…”
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7
High-performance thin-film transistors in large grain size polysilicon deposited by thermal decomposition of disilane
Published in IEEE transactions on electron devices (01-09-1996)“…The characteristics of polycrystalline silicon thin-film transistors (TFTs), fabricated on films deposited in an LPCVD system using disilane, were investigated…”
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8
Tactile displays: Overview and recent advances
Published in Displays (01-07-2008)“…Tactation is the sensation perceived by the sense of touch, and is based on the skin’s receptors. Touch is a common medium used by the general population and…”
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9
High-performance thin-film transistors in low-temperature crystallized LPCVD amorphous silicon films
Published in IEEE electron device letters (01-08-1987)“…Thin-film transistors (TFT's) were fabricated in low-temperature (550°C) crystallized amorphous LPCVD silicon films. The performance of these devices was found…”
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10
The effect of drain offset on current-voltage characteristics in sub micron polysilicon thin-film transistors
Published in IEEE transactions on electron devices (01-08-1996)“…We have examined the effect of drain offset structures with lengths ranging from 0.0 /spl mu/m to 1.0 /spl mu/m on submicron polysilicon TFT devices. The drain…”
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11
Polycrystalline silicon thin film transistors fabricated at reduced thermal budgets by utilizing fluorinated gate oxidation
Published in IEEE transactions on electron devices (01-09-1996)“…Polycrystalline silicon thin film transistors have been fabricated at reduced gate oxidation thermal budgets by utilizing NF/sub 3/-enhanced dry oxidation…”
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12
High-Frequency Half-Bit Shift Register With Amorphous-Oxide TFT
Published in IEEE electron device letters (01-04-2010)“…We have designed, fabricated, and successfully characterized a ten-stage half-bit shift register utilizing amorphous In-Ga-Zn-O (a-IGZO) thin-film-transistor…”
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13
Water Gas Shift Reaction in a glass microreactor
Published in Catalysis today (30-01-2007)“…A micro scale glass reactor was designed, fabricated and characterized with Water Gas Shift Reaction (WGSR). The fabrication procedure was quick,…”
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14
Electronic structure of CeF 3 and TbF 3 by valence-band XPS and theory
Published in The Journal of physics and chemistry of solids (2009)“…Electronic structures of the rare earth trifluorides CeF 3 ( P 3 ¯ c 1 ) and TbF 3 (Pnma) were examined by high-resolution valence-band X-ray photoelectron…”
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15
Interfacial oxide, grain size, and hydrogen passivation effects on polysilicon emitter transistors
Published in IEEE transactions on electron devices (01-08-1988)“…The influence of several process variables on the characteristics of polysilicon emitter transistors is studied. The diffusion length of the polysilicon layer…”
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16
Low-temperature polycrystalline silicon thin-film transistors for displays
Published in IEEE transactions on electron devices (01-11-1988)“…Polycrystalline silicon thin-film transistors (TFTs) have been fabricated with low-temperature (600 degrees C) oxidized semi-insulating polysilicon (SIPOS) as…”
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17
Polysilicon VGA active matrix OLED displays-technology and performance
Published in International Electron Devices Meeting 1998. Technical Digest (Cat. No.98CH36217) (1998)“…The first VGA polysilicon active matrix organic light emitting diode (AM-OLED) display will be presented. The goal of this work is to investigate the…”
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Conference Proceeding -
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Silicidation reactions with Co–Ni bilayers for low thermal budget microelectronic applications
Published in Thin solid films (22-06-1999)“…Interfacial reactions between ultra-thin Ni/Co bilayer films and single crystal Si (100) substrate were studied at 600°C using X-ray photoelectron spectroscopy…”
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Thin film transistors in low temperature as-deposited and reduced-crystallization-time polysilicon on 665°C strain point glass substrates
Published in Thin solid films (1999)“…Polysilicon TFTs were fabricated in as-deposited polycrystalline silicon films as well as in crystallized films that were deposited in a mixed phase. The…”
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20
Structural characteristics of as-deposited and crystallized mixed-phase silicon films
Published in Journal of electronic materials (01-03-1994)“…Silicon depositions are performed in a conventional, hot-wall, tubular low-pressure CVD reactor utilizing 20% silane in nitrogen as the source gas. Mixed phase…”
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