Search Results - "Hatalis, M.K."

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  1. 1

    Polysilicon TFT technology for active matrix OLED displays by Stewart, M., Howell, R.S., Pires, L., Hatalis, M.K.

    Published in IEEE transactions on electron devices (01-05-2001)
    “…The integration of active matrix polysilicon TFT technology with organic light emitting diode (OLED) displays has been investigated with the goal of producing…”
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    Journal Article
  2. 2

    Towards a palladium micro-membrane for the water gas shift reaction: microfabrication approach and hydrogen purification results by Karnik, S.V., Hatalis, M.K., Kothare, M.V.

    Published in Journal of microelectromechanical systems (01-02-2003)
    “…A novel palladium-based micromembrane is reported that can be used for hydrogen gas separation in a miniature fuel processor for micro fuel cells. The…”
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    Journal Article
  3. 3
  4. 4

    Leakage current mechanism in sub-micron polysilicon thin-film transistors by Olasupo, K.R., Hatalis, M.K.

    Published in IEEE transactions on electron devices (01-08-1996)
    “…We have studied leakage current in sub-micron p-channel polysilicon thin-film-transistor. Our study revealed that thermionic emission is the dominant mechanism…”
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    Journal Article
  5. 5

    Poly-Si thin-film transistors on steel substrates by Howell, R.S., Stewart, M., Kamik, S.V., Saha, S.K., Hatalis, M.K.

    Published in IEEE electron device letters (01-02-2000)
    “…We report the successful fabrication of poly-Si thin-film transistors (TFTs) on stainless steel substrates. The TFTs were fabricated on a 500 μm thick polished…”
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    Journal Article
  6. 6

    Polysilicon thin-film transistors using self-aligned cobalt and nickel silicide source and drain contacts by Sarcona, G.T., Stewart, M., Hatalis, M.K.

    Published in IEEE electron device letters (01-07-1999)
    “…Polysilicon thin-film transistors (TFTs) with island thickness of 20 and 70 nm were fabricated with self-aligned cobalt and nickel silicide contacts to the…”
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    Journal Article
  7. 7

    High-performance thin-film transistors in large grain size polysilicon deposited by thermal decomposition of disilane by Kouvatsos, D.N., Voutsas, A.T., Hatalis, M.K.

    Published in IEEE transactions on electron devices (01-09-1996)
    “…The characteristics of polycrystalline silicon thin-film transistors (TFTs), fabricated on films deposited in an LPCVD system using disilane, were investigated…”
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    Journal Article
  8. 8

    Tactile displays: Overview and recent advances by Chouvardas, V.G., Miliou, A.N., Hatalis, M.K.

    Published in Displays (01-07-2008)
    “…Tactation is the sensation perceived by the sense of touch, and is based on the skin’s receptors. Touch is a common medium used by the general population and…”
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    Journal Article
  9. 9

    High-performance thin-film transistors in low-temperature crystallized LPCVD amorphous silicon films by Hatalis, M.K., Greve, D.W.

    Published in IEEE electron device letters (01-08-1987)
    “…Thin-film transistors (TFT's) were fabricated in low-temperature (550°C) crystallized amorphous LPCVD silicon films. The performance of these devices was found…”
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    Journal Article
  10. 10

    The effect of drain offset on current-voltage characteristics in sub micron polysilicon thin-film transistors by Olasupo, K.R., Yarbrough, W., Hatalis, M.K.

    Published in IEEE transactions on electron devices (01-08-1996)
    “…We have examined the effect of drain offset structures with lengths ranging from 0.0 /spl mu/m to 1.0 /spl mu/m on submicron polysilicon TFT devices. The drain…”
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    Journal Article
  11. 11

    Polycrystalline silicon thin film transistors fabricated at reduced thermal budgets by utilizing fluorinated gate oxidation by Kouvatsos, D.N., Hatalis, M.K.

    Published in IEEE transactions on electron devices (01-09-1996)
    “…Polycrystalline silicon thin film transistors have been fabricated at reduced gate oxidation thermal budgets by utilizing NF/sub 3/-enhanced dry oxidation…”
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    Journal Article
  12. 12

    High-Frequency Half-Bit Shift Register With Amorphous-Oxide TFT by Jamshidi-Roudbari, A., Khan, S.A., Hatalis, M.K.

    Published in IEEE electron device letters (01-04-2010)
    “…We have designed, fabricated, and successfully characterized a ten-stage half-bit shift register utilizing amorphous In-Ga-Zn-O (a-IGZO) thin-film-transistor…”
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    Journal Article
  13. 13

    Water Gas Shift Reaction in a glass microreactor by Mukherjee, S., Hatalis, M.K., Kothare, M.V.

    Published in Catalysis today (30-01-2007)
    “…A micro scale glass reactor was designed, fabricated and characterized with Water Gas Shift Reaction (WGSR). The fabrication procedure was quick,…”
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    Journal Article
  14. 14

    Electronic structure of CeF 3 and TbF 3 by valence-band XPS and theory by Klier, K., Novák, P., Miller, A.C., Spirko, J.A., Hatalis, M.K.

    “…Electronic structures of the rare earth trifluorides CeF 3 ( P 3 ¯ c 1 ) and TbF 3 (Pnma) were examined by high-resolution valence-band X-ray photoelectron…”
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    Journal Article
  15. 15

    Interfacial oxide, grain size, and hydrogen passivation effects on polysilicon emitter transistors by Potyraj, P.A., Chen, D.-L., Hatalis, M.K., Greve, D.W.

    Published in IEEE transactions on electron devices (01-08-1988)
    “…The influence of several process variables on the characteristics of polysilicon emitter transistors is studied. The diffusion length of the polysilicon layer…”
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    Journal Article
  16. 16

    Low-temperature polycrystalline silicon thin-film transistors for displays by Biay-Cheng-Hseih, Hatalis, M.K., Greve, D.W.

    Published in IEEE transactions on electron devices (01-11-1988)
    “…Polycrystalline silicon thin-film transistors (TFTs) have been fabricated with low-temperature (600 degrees C) oxidized semi-insulating polysilicon (SIPOS) as…”
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    Journal Article
  17. 17

    Polysilicon VGA active matrix OLED displays-technology and performance by Stewart, M., Howell, R.S., Pires, L., Hatalis, M.K., Howard, W., Prache, O.

    “…The first VGA polysilicon active matrix organic light emitting diode (AM-OLED) display will be presented. The goal of this work is to investigate the…”
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    Conference Proceeding
  18. 18

    Silicidation reactions with Co–Ni bilayers for low thermal budget microelectronic applications by Saha, S.K., Howell, R.S., Hatalis, M.K.

    Published in Thin solid films (22-06-1999)
    “…Interfacial reactions between ultra-thin Ni/Co bilayer films and single crystal Si (100) substrate were studied at 600°C using X-ray photoelectron spectroscopy…”
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    Journal Article
  19. 19

    Thin film transistors in low temperature as-deposited and reduced-crystallization-time polysilicon on 665°C strain point glass substrates by Hatalis, M.K., Kouvatsos, D.N., Kung, J.H., Voutsas, A.T., Kanicki, J.

    Published in Thin solid films (1999)
    “…Polysilicon TFTs were fabricated in as-deposited polycrystalline silicon films as well as in crystallized films that were deposited in a mixed phase. The…”
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    Journal Article
  20. 20

    Structural characteristics of as-deposited and crystallized mixed-phase silicon films by VOUTSAS, A. T, HATALIS, M. K

    Published in Journal of electronic materials (01-03-1994)
    “…Silicon depositions are performed in a conventional, hot-wall, tubular low-pressure CVD reactor utilizing 20% silane in nitrogen as the source gas. Mixed phase…”
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    Journal Article