Search Results - "Hashim, M. R."
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1
Porous-shaped silicon carbide ultraviolet photodetectors on porous silicon substrates
Published in Journal of alloys and compounds (05-03-2013)“…[Display omitted] ► Porous-shaped silicon carbide thin film was deposited on porous silicon substrate. ► Thermal annealing was followed to enhance the physical…”
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Journal Article -
2
Synthesis of SiC Nanowires via Controllable Anodic Etching Time
Published in Applied physics. A, Materials science & processing (01-07-2020)“…Porous SiC (PSC) was successfully synthesized via UV-assisted pulsed current anodic etching of hexagonal n-type silicon carbide (6H–SiC) substrate using…”
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Journal Article -
3
Flake-like ZnO nanostructures density for improved absorption using electrochemical deposition in UV detection
Published in Journal of alloys and compounds (15-11-2013)“…•Different density of ZnO nanoflakes electrochemically deposited on Si (111) substrate.•At different duration of deposition ZnO nanoflakes exhibit different…”
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4
Temperature-dependent transport properties of CVD-fabricated n-GaN nanorods/p-Si heterojunction devices
Published in RSC advances (10-09-2020)“…We report on the structural, electrical, and transport properties of high quality CVD-fabricated n-GaN nanorods (NRs)/p-Si heterojunction diodes. The X-ray…”
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Journal Article -
5
Effect of different electrolytes on porous GaN using photo-electrochemical etching
Published in Applied surface science (01-05-2011)“…► We report the properties and the behavior of GaN during the photoelectrochemical etching process using four different electrolytes. ► The measurements show…”
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Journal Article -
6
Interface properties determined the performance of thermally grown GaN/Si heterojunction solar cells
Published in Solar energy (01-12-2013)“…•The grown GaN nanostructures depend on the orientation of the Si substrate.•The grown GaN nanostructures can effectively be used as antireflection…”
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Journal Article -
7
Enhanced optical and electrical stability of thermally carbonized porous silicon
Published in Materials science in semiconductor processing (01-04-2013)“…In the current paper, the intrinsic instability of physical properties of porous silicon (PS) was minimized using a thermal carbonization (TC) method. A…”
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Journal Article -
8
One-step synthesis of GaN thin films on Si substrate by a convenient electrochemical technique at low temperature for different durations
Published in Journal of crystal growth (01-06-2011)“…This paper reports the synthesis and characterization of GaN thin films deposited on Si (1 1 1) substrate, using electrochemical deposition technique below…”
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Journal Article -
9
NH3-free growth of GaN nanostructure on n-Si (111) substrate using a conventional thermal evaporation technique
Published in Journal of crystal growth (15-06-2012)“…We have investigated the influence of carrier gas on grown gallium nitride (GaN) epitaxial layers deposited on n-Si (111) by a physical vapour deposition (PVD)…”
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Journal Article -
10
High sensitivity of palladium on porous silicon MSM photodetector
Published in Physica. B, Condensed matter (15-02-2011)“…In this work, the nanocrystalline porous silicon (PS) is prepared through the simple electrochemical etching of n-type Si (1 0 0) under the illumination of a…”
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Journal Article -
11
Enhanced optical properties of porous GaN by using UV-assisted electrochemical etching
Published in Physica. B, Condensed matter (01-08-2010)“…In this paper we report the fabrication of porous GaN by UV-assisted electrochemical etching with direct current densities of 5, 10 and 20 mA/cm 2 for 20 min…”
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12
The evolution of Si-capped Ge islands on Si (100) by RF magnetron sputtering and rapid thermal processing: The role of annealing times
Published in Microelectronic engineering (25-08-2014)“…[Display omitted] •Ge islands synthesized by RTP of sputtered Si-capped Ge on Si(100) at 900°C for 30, 45, and 60s.•As the annealing time increased, the Ge…”
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Journal Article Conference Proceeding -
13
Enhanced ultraviolet emission in photoluminescence of GaN film covered by ZnO nanoflakes
Published in Journal of luminescence (01-02-2013)“…In this study, ultraviolet (UV) photoluminescence (PL) emission of gallium nitride (GaN) was improved using ZnO nanoflakes (NFs) as cap layer. Capped ZnO was…”
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Journal Article -
14
Analysis of the properties of germanium/zinc silicate film growth through a simple thermal evaporation technique for hydrogen gas sensing and deep UV photodetector application
Published in Materials science in semiconductor processing (01-10-2013)“…Germanium/zinc silicate (Ge/Zn2SiO4) thin films were produced in a high-temperature horizontal tube furnace. Structural and optical properties of thin films…”
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Journal Article -
15
Silver nanowires assisted porous silicon for high photodetector sensitivity using surface plasmonic phenomena
Published in Sensors and actuators. A. Physical. (01-11-2022)“…In this study, high purity, ultra-thin silver nanowires (AgNWs) were synthesized by utilizing a modified polyol technique in order to design an inexpensive,…”
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Journal Article -
16
Effect of growth time on Ti-doped ZnO nanorods prepared by low-temperature chemical bath deposition
Published in Physica. E, Low-dimensional systems & nanostructures (01-04-2017)“…Ti-doped ZnO nanorod arrays were grown onto Si substrate using chemical bath deposition (CBD) method at 93°C. To investigate the effect of time deposition on…”
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Journal Article -
17
Structural and optical characteristics of Ti-doped ZnO nanorods deposited by simple chemical bath deposition
Published in Journal of materials science. Materials in electronics (01-08-2017)“…Ti-doped ZnO nanorods (NRs) have been deposited onto Si substrates at 93 °C by using chemical bath deposition method. FESEM observations show high-quality NRs…”
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Journal Article -
18
High-performance multicolor metal-semiconductor-metal Si photodetector enhanced by nanostructured NiO thin film
Published in Journal of alloys and compounds (25-08-2019)“…The performance of multicolor metal-semiconductor-metal (MSM) Si photodetector was improved by integrating nanostructured NiO film on Si (100) substrate using…”
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Journal Article -
19
Leakage current reduction in n-GaN/p-Si (100) heterojunction solar cells
Published in Applied physics letters (11-01-2021)“…We report on the growth of n-GaN/p-Si heterojunction solar cells via thermal chemical vapor deposition on Si (100) substrates at different growth temperatures…”
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Journal Article -
20
Self-assembly of aligned CuO nanorod arrays using nanoporous anodic alumina template by electrodeposition on Si substrate for IR photodetectors
Published in Sensors and actuators. A. Physical. (01-03-2016)“…•A low cost and efficient method was developed to prepare uniform CuO nanorod arrays embedded into Si-based AAO template.•Fabrication by AAO template…”
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