Search Results - "Hashemi, Pouya"

Demonstration of Nanosecond Operation in Stochastic Magnetic Tunnel Junctions by Safranski, Christopher, Kaiser, Jan, Trouilloud, Philip, Hashemi, Pouya, Hu, Guohan, Sun, Jonathan Z

“…Magnetic tunnel junctions operating in the superparamagnetic regime are promising devices in the field of probabilistic computing, which is suitable for…”
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Increased critical thickness for high Ge-content strained SiGe-on-Si using selective epitaxial growth by Kim, Meekyung, Hashemi, Pouya, Hoyt, Judy L.

“…The onset of misfit dislocation formation, i.e., the critical thickness for heteroepitaxy, is studied for selective epitaxial growth of high Ge-content,…”
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Three-dimensional monolithic integration of III-V and Si(Ge) FETs for hybrid CMOS and beyond by Deshpande, Veeresh, Djara, Vladimir, O Connor, Eamon, Hashemi, Pouya, Morf, Thomas, Balakrishnan, Karthik, Caimi, Daniele, Sousa, Marilyne, Fompeyrine, Jean, Czornomaz, Lukas

“…Three-dimensional (3D) monolithic integration can enable higher density and has the potential to stack independently optimized layers at transistor level…”
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Demonstration of Symmetric Lateral NPN Transistors on SOI Featuring Epitaxially Grown Emitter/Collector Regions by Hashemi, Pouya, Yau, Jeng-Bang, Chan, Kevin K., Ning, Tak H., Shahidi, Ghavam G.

“…Symmetric lateral NPN bipolar junction transistors on Si-on-insulator having epitaxially grown emitter/collector regions are demonstrated, for the first time…”
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Effect of germanium fraction on the effective minority carrier lifetime in thin film amorphous-Si/crystalline-Si1xGex/crystalline-Si heterojunction solar cells by Abdul Hadi, Sabina, Hashemi, Pouya, DiLello, Nicole, Polyzoeva, Evelina, Nayfeh, Ammar, Hoyt, Judy L.

“…The effect of germanium fraction on the effective minority carrier lifetime (τeff ) for epitaxial Si1-xGex layers is extracted using measurements on…”
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High Mobility High-Ge-Content SiGe PMOSFETs Using Al2O3/HfO2 Stacks With In-Situ O3 Treatment by Ando, Takashi, Hashemi, Pouya, Bruley, John, Rozen, John, Ogawa, Yohei, Koswatta, Siyuranga, Chan, Kevin K., Cartier, Eduard A., Mo, Renee, Narayanan, Vijay

“…We developed an Al 2 O 3 /HfO 2 bi-layer gate dielectric with an in-situ O 3 treatment for interface state density (D it ) and gate leakage current density (J…”
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High performance and reliable strained SiGe PMOS FinFETs enabled by advanced gate stack engineering by Hashemi, Pouya, Ando, Takashi, Cartier, Eduard A., Kam-Leung Lee, Bruley, John, Choong-Hyun Lee, Narayanan, Vijay

“…Strained-SiGe, with high-Ge-content, has recently drawn significant attention as an alternate p-channel option for advance FinFETs. Among various technological…”
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Reliable Sub-Nanosecond Switching in Magnetic Tunnel Junctions for MRAM Applications by Safranski, Christopher, Hu, Guohan, Sun, Jonathan Z., Hashemi, Pouya, Brown, Stephen L., Buzi, Luxherta, D'Emic, Christopher P., Edwards, Eric R. J., Galligan, Eileen, Gottwald, Matthias G., Gunawan, Oki, Karimeddiny, Saba, Jung, Hyunsung, Kim, Juhyun, Latzko, Ken, Trouilloud, Philip L., Worledge, Daniel C.

“…We demonstrate reliable sub-nanosecond switching in two-terminal spin transfer torque magnetoresistive random access memory (STT-MRAM) devices by using double…”
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High Hole-Mobility Strained-Ge/Si0.6Ge0.4 P-MOSFETs With High-K/Metal Gate: , Role of Strained-Si Cap Thickness by HASHEMI, Pouya, HOYT, Judy L

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High Hole-Mobility Strained-[Formula Omitted] P-MOSFETs With High-K/Metal Gate: Role of Strained-Si Cap Thickness by Hashemi, Pouya, Hoyt, Judy L

“…Low-field effective hole mobility of highly strained ([Formula Omitted] 2.4%, biaxial) germanium-channel (7.8 nm-thick) p-MOSFETs with high-K/metal gate stack…”
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High Hole-Mobility Strained- hbox Ge / Si 0.6 hbox Ge 0.4 P-MOSFETs With High-K/Metal Gate: Role of Strained-Si Cap Thickness by Hashemi, Pouya, Hoyt, Judy L

“…Low-field effective hole mobility of highly strained ( similar to 2.4%, biaxial) germanium-channel (7.8 nm-thick) p-MOSFETs with high-K/metal gate stack has…”
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Corrigendum to “Thin-film Si^sub 1-x^Ge^sub x^ HIT solar cells” [Solar Energy 103 (2014) 154–159] by Hadi, Sabina Abdul, Hashemi, Pouya, DiLello, Nicole, Polyzoeva, Evelina, Nayfeh, Ammar, Hoyt, Judy L

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Corrigendum to “Thin-film Si1−xGex HIT solar cells” [Solar Energy 103 (2014) 154–159] by Abdul Hadi, Sabina, Hashemi, Pouya, DiLello, Nicole, Polyzoeva, Evelina, Nayfeh, Ammar, Hoyt, Judy L.

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Thin-film Si1−xGex HIT solar cells by Abdul Hadi, Sabina, Hashemi, Pouya, DiLello, Nicole, Polyzoeva, Evelina, Nayfeh, Ammar, Hoyt, Judy L.

“…•Fabricated 2μm-thick Si1−xGex based solar cells with x=0, 0.25, 0.41 and 0.56.•Novel strained-Si layer grown on Si1−xGex improves the solar cell…”
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High Mobility High-Ge-Content SiGe PMOSFETs Using Al 2 O 3 /HfO 2 Stacks With In-Situ O 3 Treatment by Ando, Takashi, Hashemi, Pouya, Bruley, John, Rozen, John, Ogawa, Yohei, Koswatta, Siyuranga, Chan, Kevin K., Cartier, Eduard A., Mo, Renee, Narayanan, Vijay

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Record Hole Mobility at High Vertical Fields in Planar Strained Germanium on Insulator With Asymmetric Strain by Chern, Winston, Hashemi, Pouya, Teherani, James T., Antoniadis, Dimitri A., Hoyt, Judy L.

“…Long channel asymmetrically strained Ge narrow width p-MOSFETs were fabricated from (100) biaxially strained Ge (strain ~ 2.5%) on insulator. Devices with…”
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Enhanced Hole Transport in Short-Channel Strained-SiGe p-MOSFETs by Gomez, L., Hashemi, P., Hoyt, J.L.

“…Hole mobility and velocity are extracted from scaled strained-Si 0.45 Ge 0.55 channel p-MOSFETs on insulator. Devices have been fabricated with sub-100-nm gate…”
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Thin-film Si sub(1) sub(-) sub(x)Ge sub(x) HIT solar cells by Hadi, Sabina Abdul, Hashemi, Pouya, DiLello, Nicole, Polyzoeva, Evelina, Nayfeh, Ammar, Hoyt, Judy L

“…We fabricated silicon-germanium (Si sub(1) sub(-) sub(x)Ge sub(x)) based HIT solar cells with x = 0, 0.25, 0.41 and 0.56 in order to quantify the effect of…”
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Thin-film Si^sub 1-x^Ge^sub x^ HIT solar cells by Hadi, Sabina Abdul, Hashemi, Pouya, DiLello, Nicole, Polyzoeva, Evelina, Nayfeh, Ammar, Hoyt, Judy L

“…We fabricated silicon-germanium (Si...Ge...) based HIT solar cells with x = 0, 0.25, 0.41 and 0.56 in order to quantify the effect of germanium fraction on key…”
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Ultrathin Strained-Ge Channel P-MOSFETs With High- K /Metal Gate and Sub-1-nm Equivalent Oxide Thickness by Hashemi, O., Chern, W., Lee, H., Teherani, J. T., Zhu, Y., Gonsalvez, J., Shahidi, G. G., Hoyt, J. L.

“…Surface-channel strained-Ge (s-Ge) p-MOSFETs with high- K /metal gate stack and ozone surface passivation are fabricated, for the first time. The channel is…”
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