Search Results - "Hasbullah, N F"

Electroluminescence Studies of Modulation p-Doped Quantum Dot Laser Structures by Hasbullah, N F, Hopkinson, M, Alexander, R R, Hogg, R A, David, J P R, Badcock, T J, Mowbray, D J

“…Electroluminescence (EL) measurements have been performed on InAs/InGaAs/GaAs quantum dot (QD) structures with varying amounts of modulation p-doping…”
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The impact of scaling on single event upset in 6T and 12T SRAMs from 130 to 22 nm CMOS technology by Yusop, N. S., Nordin, A. N., Khairi, M. Azim, Hasbullah, N. F.

“…As transistor sizes scale down to nanometres dimensions, CMOS circuits become more sensitive to radiation. High-performance static random access memory (SRAM)…”
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Neutron Radiation Effects on the Electrical Characteristics of InAs/GaAs Quantum Dot-in-a-Well Structures by Ahmad Fauzi, D., Md Rashid, N. K. A., Mohamed Zin, M. R., Hasbullah, N. F.

“…This paper studies the effects of neutron radiation on the electrical behaviour and leakage current mechanism of quantum dot-in-a-well (DWELL) semiconductor…”
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The effects of electron irradiation and thermal dependence measurements on 4H-SiC Schottky diode by Ganiyev, Sabuhi, Azim Khairi, M., Ahmad Fauzi, D., Abdullah, Yusof, Hasbullah, N. F.

“…In this paper the effects of high energy (3.0 MeV) electrons irradiation over a dose ranges from 6 to 15 MGy at elevated temperatures 298 to 448 K on the…”
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Shear horizontal waves in composite materials: Behavior under rotation and initial stress by Abd-alla, Abo-el-nour N, Othman, MIA, Hasbullah, NF

“…The main scope of this paper is to present in a simple and concise way a mathematical model of composite materials able to describe the propagation of shear…”
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Development of Low Bit Rate Speech Encoder based on Vector Quantization and Compressive Sensing by Kassim, L A S, Gunawan, T S, Khalifa, O O, Kartiwi, M, Sulong, A, Abdullah, K, Hasbullah, N F

“…Speech coding is a representation of a digitized speech signal using as few bits as possible, while maintaining reasonable level of speech quality. Due to…”
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Dependence of the Electroluminescence on the Spacer Layer Growth Temperature of Multilayer Quantum-Dot Laser Structures by Hasbullah, N.F., Jo Shien Ng, Hui-Yun Liu, Hopkinson, M., David, J., Badcock, T.J., Mowbray, D.J.

“…Electroluminescence (EL) measurements have been performed on a set of In(Ga)As-GaAs quantum-dot (QD) structures with varying spacer layer growth temperature…”
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Reliability Study of Silicon Carbide Schottky Diode with Fast Electron Irradiation by Khairi, M. Azim, Rahim, Rosminazuin Ab, Saidin, Norazlina, Hasbullah, N. F., Abdullah, Yusof

“…The impact of fast electron exposure upon the performance of commercial silicon carbide Schottky diodes has been studied. Under 3 MeV electrons, absorbed dose…”
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Simulation of Electrical Characterization on Lateral Silicon-on-Insulator PIN Diode for Space Radiation Detector by Zainudin, Z., Ismail, A. F., Hasbullah, N. F., Sabri, S. F.

“…This paper discusses on the performance of S OI pin diode radiation detector when compared to conventional bulk silicon pin diode radiation detector. Lateral S…”
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Fuzzy logic based temperature control of thermoelectric cooler (TEC) for single photon avalanche diode (SPAD) application by Samsuddin, N. I., Hasbullah, N. F., Ahmad, S.

“…Single photon avalanche diode (SPAD) is a temperature sensitive device. Even a slight variation of temperature can cause unstable performance in quantum…”
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Reverse leakage current mechanisms in quantum dot laser structures by Hasbullah, N. F., David, J. P. R.

“…Dark current-voltage measurements undertaken on a series of InAs based quantum dot laser structures show significant variations depending on the growth…”
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Effects on electrical characteristics of commercially available Si and GaAs diodes exposed to californium-252 radiation by Omar, N. I. C., Hasbullah, N. F., Rashid, N. K. A. M., Abdullah, J.

“…The aim of this research is to investigate the effects of neutron irradiation using Cf-252 neutron source on different types of commercially available Si and…”
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Electrical properties of neutron-irradiated silicon and GaAs commercial diodes by Omar, N. I. C., Hasbullah, N. F., Alang Md Rashid, Nahrul Khair, Abdullah, J.

“…Neutron radiation testing was performed on silicon and GaAs diodes to investigate changes in the device parameters after neutron exposure. Californium-252…”
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