Search Results - "Hasbani, F."

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  1. 1

    A 200-MHz Integrated Buck Converter With Resonant Gate Drivers for an RF Power Amplifier by Bathily, M., Allard, B., Hasbani, F.

    Published in IEEE transactions on power electronics (01-02-2012)
    “…High switching frequency dc-dc converters are present in many applications where wide regulation bandwidth and high efficiency are needed. A resonant gate…”
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    Journal Article
  2. 2

    Design Flow for High Switching Frequency and Large-Bandwidth Analog DC/DC Step-Down Converters for a Polar Transmitter by Bathily, M., Allard, B., Hasbani, F., Pinon, V., Verdier, J.

    Published in IEEE transactions on power electronics (01-02-2012)
    “…System-on-chip requirements for energy management push both technology and design of voltage regulators to their limits. Integration constraints are added to…”
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    Journal Article
  3. 3

    Stability Analysis and Design Procedure of Multiloop Linear LDO Regulators via State Matrix Decomposition by Coulot, T., Lauga-Larroze, E., Fournier, J., Alamir, M., Hasbani, F.

    Published in IEEE transactions on power electronics (01-11-2013)
    “…This paper presents the application of the state space approach to analyze stability and robustness of multiloop linear low dropout (LDO) regulators. Because…”
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    Journal Article
  4. 4

    2.6GHz ultra-wide voltage range energy efficient dual A9 in 28nm UTBB FD-SOI by Jacquet, D., Cesana, G., Flatresse, P., Arnaud, F., Menut, P., Hasbani, F., Di Gilio, T., Lecocq, C., Roy, T., Chhabra, A., Grover, C., Minez, O., Uginet, J., Durieu, G., Nyer, F., Adobati, C., Wilson, R., Casalotto, D.

    Published in 2013 Symposium on VLSI Technology (01-06-2013)
    “…This paper presents the implementation details and silicon results of a 2.6GHz dual-core ARM Cortex A9 manufactured in a 28nm Ultra-Thin Body and BOX FD-SOI…”
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    Conference Proceeding
  5. 5

    Specifications of high-frequency DC/DC converters for battery-operated class-F RF applications by Bathily, M., Allard, B., Hasbani, F., Verdier, J.

    “…System-on-Chip requirements for Energy Management push both technology and design of voltage regulators to their limits. Integration constraints are added to…”
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    Conference Proceeding
  6. 6

    Technology-circuit convergence for full-SOC platform in 28 nm and beyond by Arnaud, F., Colquhoun, S., Mareau, A. L., Kohler, S., Jeannot, S., Hasbani, F., Paulin, R., Cremer, S., Charbuillet, C., Druais, G., Scheer, P.

    “…In this paper, we present a process/design co-optimization methodology for a full-SOC platform based on 28nm LP CMOS technology with high-k metal-gate (HK/MG)…”
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    Conference Proceeding
  7. 7

    Resonant gate drive for silicon integrated DC/DC converters by Bathily, M., Allard, B., Verdier, J., Hasbani, F.

    “…Many studies concern high-switching frequency, monolithic DC/DC converters in the 1-W range for battery-powered handsets (up to 5 V-input voltage). The major…”
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    Conference Proceeding
  8. 8

    2.6GHz ultra-wide voltage range energy efficient dual A9 in 28nm UTBB FD-SOI by Jacquet, D., Cesana, G., Flatresse, P., Arnaud, F., Menut, P., Hasbani, F., Di Gilio, T., Lecocq, C., Roy, T., Chhabra, A., Grover, C., Minez, O., Uginet, J., Durieu, G., Nyer, F., Adobati, C., Wilson, R., Casalotto, D.

    Published in 2013 Symposium on VLSI Circuits (01-06-2013)
    “…This paper presents the implementation details and silicon results of a 2.6GHz dual-core ARM Cortex A9 manufactured in a 28nm Ultra-Thin Body and BOX FD-SOI…”
    Get full text
    Conference Proceeding