Search Results - "Hartwich, J"

F18-FDG PET/CT imaging early predicts pathologic complete response to induction chemoimmunotherapy of locally advanced head and neck cancer: preliminary single-center analysis of the checkrad-cd8 trial by Beck, M., Hartwich, J., Eckstein, M., Schmidt, D., Gostian, A. O., Müller, S., Rutzner, S., Gaipl, U. S., von der Grün, J., Illmer, T., Hautmann, M. G., Klautke, G., Döscher, J., Brunner, T., Tamaskovics, B., Hartmann, A., Iro, H., Kuwert, T., Fietkau, R., Hecht, M., Semrau, S.

“…Aim In the CheckRad-CD8 trial patients with locally advanced head and neck squamous cell cancer are treated with a single cycle of induction…”
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Sub-5-nm-spatial resolution in scanning spreading resistance microscopy using full-diamond tips by Álvarez, D., Hartwich, J., Fouchier, M., Eyben, P., Vandervorst, W.

“…Scanning spreading resistance microscopy is a two-dimensional carrier profiling technique now widely used for the characterization of silicon (Si) devices as…”
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Effect of supplementation with vitamin E and C on plasma hsCRP level and cobalt-albumin binding score as markers of plasma oxidative stress in obesity by Hartwich, J, Góralska, J, Siedlecka, D, Gruca, A, Trzos, M, Dembinska-Kiec, A

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Proangiogenic activity of beta-carotene is coupled with the activation of endothelial cell chemotaxis by Dembinska-Kiec, A., Polus, A., Kiec-Wilk, B., Grzybowska, J., Mikolajczyk, M., Hartwich, J., Razny, U., Szumilas, K., Banas, A., Bodzioch, M., Stachura, J., Dyduch, G., Laidler, P., Zagajewski, J., Langman, T., Schmitz, G.

“…Endothelial cells play an important role in angiogenesis (formation of new vessels from preexisting ones), which is essential for organogenesis, tissue…”
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Influence of crystal orientation and body doping on trigate transistor performance by Landgraf, E., Rösner, W., Städele, M., Dreeskornfeld, L., Hartwich, J., Hofmann, F., Kretz, J., Lutz, T., Luyken, R.J., Schulz, T., Specht, M., Risch, L.

“…This work characterizes long channel trigate transistors with respect to the systematic influence of crystal orientation and body doping on performance issues…”
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20 nm electron beam lithography and reactive ion etching for the fabrication of double gate FinFET devices by Kretz, J., Dreeskornfeld, L., Hartwich, J., Rösner, W.

“…New device concepts have been introduced to overcome the problems of planar microelectronic devices. The FinFET, which is a variant of the double gate…”
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Fabrication and characterization of full diamond tips for scanning spreading-resistance microscopy by Álvarez, D., Fouchier, M., Kretz, J., Hartwich, J., Schoemann, S., Vandervorst, W.

“…The present paper presents the realization and characterization of a tip design and production process for scanning spreading-resistance microscopy (SSRM). The…”
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Nanoscale FinFETs for low power applications by Rösner, W., Landgraf, E., Kretz, J., Dreeskornfeld, L., Schäfer, H., Städele, M., Schulz, T., Hofmann, F., Luyken, R.J., Specht, M., Hartwich, J., Pamler, W., Risch, L.

“…N and p channel FinFETs with fin widths in the range of 15–30 nm and gate lengths down to 20 nm have been processed using e-beam-lithography and nano-etching…”
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Comparison of Trimming Techniques for Sub-Lithographic Silicon Structures by Dreeskornfeld, L., Graham, A. P., Hartwich, J., Kretz, J., Landgraf, E., Lutz, T., Rösner, W., Specht, M., Risch, L.

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Novel dual bit tri-gate charge trapping memory devices by Specht, M., Kommling, R., Hofmann, F., Klandzievski, V., Dreeskornfeld, L., Weber, W., Kretz, J., Landgraf, E., Schulz, T., Hartwich, J., Rosner, W., Stadele, M., Luyken, R.J., Reisinger, H., Graham, A., Hartmann, E., Risch, L.

“…Dual bit operation of fabricated tri-gate nonvolatile memory devices with aggressively scaled oxide-nitride-oxide (ONO) dielectrics is presented for the first…”
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Scanning spreading resistance microscopy of fully depleted silicon-on-insulator devices by Álvarez, D., Hartwich, J., Kretz, J., Fouchier, M., Vandervorst, W.

“…Scanning spreading resistance microscopy (SSRM) is an electrical characterization tool used for the measurement of the 2D carrier distribution in semiconductor…”
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Design considerations for fully depleted SOI transistors in the 25–50 nm gate length regime by Luyken, R.J., Schulz, T., Hartwich, J., Dreeskornfeld, L., Städele, M., Rösner, W.

“…Drift-diffusion simulations have been carried out to investigate the design space for n-channel fully depleted (FD) SOI transistors with undoped channels and…”
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Bioavailability of antioxidant vitamins. Relation between the modality of intake and plasma markers of oxidative stress by Góralska, J, Hartwich, J, Siedlecka, D, Gruca, A, Dolecki, M, Drozdz, W, Trzos, M, Dembinska-Kiec, A

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Impact of technology parameters on device performance of UTB-SOI CMOS by Schulz, T., Pacha, C., Luyken, R.J., Städele, M., Hartwich, J., Dreeskornfeld, L., Landgraf, E., Kretz, J., Rösner, W., Specht, M., Hofmann, F., Risch, L.

“…Ultra-thin-body silicon-on-insulator (UTB-SOI) is one of the most promising candidates for future CMOS technologies with minimum feature sizes below 50 nm. In…”
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STM writing of artificial nanostructures in alkanethiol-type self-assembled monolayers by Hartwich, J, Sundermann, M, Kleineberg, U, Heinzmann, U

“…We report on the fabrication of artificial nanostructures in ultrathin resist films patterned by STM-lithography in ultrahigh vacuum ambience. A special type…”
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High-resolution scanning spreading resistance microscopy of surrounding-gate transistors by Álvarez, D., Schömann, S., Goebel, B., Manger, D., Schlösser, T., Slesazeck, S., Hartwich, J., Kretz, J., Eyben, P., Fouchier, M., Vandervorst, W.

“…Scanning spreading resistance microscopy (SSRM) was performed in surrounding-gate transistors for 70 nm dynamic random access memories. Sub-10 nm features were…”
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Fabrication of ultra-thin-film SOI transistors using the recessed channel concept by Dreeskornfeld, L., Hartwich, J., Hofmann, F., Kretz, J., Landgraf, E., Luyken, R.J., Rösner, W., Schröter, R., Schulz, T., Specht, M., Städele, M., Weber, W., Risch, L.

“…In this article, ultra-thin-film SOI transistors fabricated by locally recessing the channel regions are presented. SOI MOSFETs with ultra-thin channels offer…”
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Nanopatterning of Au absorber films on Mo/Si EUV multilayer mirrors by STM lithography in self-assembled monolayers by Sundermann, M., Hartwich, J., Rott, K., Meyners, D., Majkova, E., Kleineberg, U., Grunze, M., Heinzmann, U.

“…We report on the fabrication and characterization of artificial nanostructures in alkanethiol-type self-assembled monolayers (SAMs) and subsequent pattern…”
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The pipeline project: Pre-publication independent replications of a single laboratory's research pipeline by Schweinsberg, Martin, Madan, Nikhil, Vianello, Michelangelo, Sommer, S. Amy, Jordan, Jennifer, Tierney, Warren, Awtrey, Eli, Zhu, Luke Lei, Diermeier, Daniel, Heinze, Justin E., Srinivasan, Malavika, Tannenbaum, David, Bivolaru, Eliza, Dana, Jason, Davis-Stober, Clintin P., du Plessis, Christilene, Gronau, Quentin F., Hafenbrack, Andrew C., Liao, Eko Yi, Ly, Alexander, Marsman, Maarten, Murase, Toshio, Qureshi, Israr, Schaerer, Michael, Thornley, Nico, Tworek, Christina M., Wagenmakers, Eric-Jan, Wong, Lynn, Anderson, Tabitha, Bauman, Christopher W., Bedwell, Wendy L., Brescoll, Victoria, Canavan, Andrew, Chandler, Jesse J., Cheries, Erik, Cheryan, Sapna, Cheung, Felix, Cimpian, Andrei, Clark, Mark A., Cordon, Diana, Cushman, Fiery, Ditto, Peter H., Donahue, Thomas, Frick, Sarah E., Gamez-Djokic, Monica, Grady, Rebecca Hofstein, Graham, Jesse, Gu, Jun, Hahn, Adam, Hanson, Brittany E., Hartwich, Nicole J., Hein, Kristie, Inbar, Yoel, Jiang, Lily, Kellogg, Tehlyr, Kennedy, Deanna M., Legate, Nicole, Luoma, Timo P., Maibuecher, Heidi, Meindl, Peter, Miles, Jennifer, Mislin, Alexandra, Molden, Daniel C., Motyl, Matt, Newman, George, Ngo, Hoai Huong, Packham, Harvey, Ramsay, Philip S., Ray, Jennifer L., Sackett, Aaron M., Sellier, Anne-Laure, Sokolova, Tatiana, Sowden, Walter, Storage, Daniel, Sun, Xiaomin, Van Bavel, Jay J., Washburn, Anthony N., Wei, Cong, Wetter, Erik, Wilson, Carlos T., Darroux, Sophie-Charlotte, Uhlmann, Eric Luis

“…This crowdsourced project introduces a collaborative approach to improving the reproducibility of scientific research, in which findings are replicated in…”
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Sub-40nm tri-gate charge trapping nonvolatile memory cells for high-density applications by Specht, M., Kommling, R., Dreeskornfeld, L., Weber, W., Hofmann, F., Alvarez, D., Kretz, J., Luyken, R.J., Rosner, W., Reisinger, H., Landgraf, E., Schulz, T., Hartwich, J., Stadele, M., Klandievski, V., Hartmann, E., Risch, L.

“…Fully-depleted tri-gate oxide-nitride-oxide (ONO) transistor memory cells with very short gate lengths in the range L/sub G/ = 30 - 80 nm have been fabricated…”
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