Low-temperature growth of GaAs on Si used for ultrafast photoconductive switches

GaAs was grown directly on silicon by molecular beam epitaxy (MBE) at low substrate temperature (/spl sim/250/spl deg/C). Both the silicon wafer cleaning and the GaAs film growth processes were done at temperatures lower than the Si-Al eutectic temperature to enable monolithic integration of low-tem...

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Bibliographic Details
Published in:	IEEE journal of quantum electronics Vol. 40; no. 6; pp. 800 - 804
Main Authors:	Kai Ma, Urata, R., Miller, D.A.B., Harria, J.S.
Format:	Journal Article
Language:	English
Published:	New York, NY IEEE 01-06-2004 Institute of Electrical and Electronics Engineers The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subjects:	Applied sciences Circuit properties Cleaning Electric, optical and optoelectronic circuits Electronics Exact sciences and technology Fabrication techniques; lithography, pattern transfer Gallium arsenide Integrated optics. Optical fibers and wave guides Molecular beam epitaxial growth Optical and optoelectronic circuits Photoconducting materials Photoconductivity Semiconductor films Silicon Substrates Switches Temperature Aluminium arsenides Integrated optics Atomic force microscopy Scanning electron microscopy Binary compound Gallium arsenides RHEED Experimental study MSM junctions X ray diffraction Time resolution Manufacturing process Semiconductor switches Molecular beam epitaxy Silicon Optical switch Photoconducting switches Monolithic integrated circuit ps range
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Summary:	GaAs was grown directly on silicon by molecular beam epitaxy (MBE) at low substrate temperature (/spl sim/250/spl deg/C). Both the silicon wafer cleaning and the GaAs film growth processes were done at temperatures lower than the Si-Al eutectic temperature to enable monolithic integration of low-temperature-GaAs photoconductive switches with finished Si-CMOS circuits. The film surfaces show less than 1 nm rms roughness and the anti-phase domain density is below the detection limit of X-ray diffraction. Metal-semiconductor-metal photoconductive switches were made using this material and were characterized using a time-resolved electrooptic sampling technique. A full-width at half-maximum switching time of /spl sim/2 ps was achieved and the responsivity of switches made from low-temperature GaAs on Si material was comparable to its counterpart on a GaAs substrate.
Bibliography:	ObjectType-Article-2 SourceType-Scholarly Journals-1 ObjectType-Feature-1 content type line 23
ISSN:	0018-9197 1558-1713
DOI:	10.1109/JQE.2004.828234