Search Results - "Hardtdegen, Alexander"

Variability-Aware Modeling of Filamentary Oxide-Based Bipolar Resistive Switching Cells Using SPICE Level Compact Models by Bengel, Christopher, Siemon, Anne, Cuppers, Felix, Hoffmann-Eifert, Susanne, Hardtdegen, Alexander, von Witzleben, Moritz, Hellmich, Lena, Waser, Rainer, Menzel, Stephan

“…Bipolar resistive switching (BRS) cells based on the valence change mechanism show great potential to enable the design of future non-volatile memory, logic…”
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Cation diffusion in polycrystalline thin films of monoclinic HfO2 deposited by atomic layer deposition by Mueller, Michael P., Pingen, Katrin, Hardtdegen, Alexander, Aussen, Stephan, Kindsmueller, Andreas, Hoffmann-Eifert, Susanne, De Souza, Roger A.

“…Though present in small amounts and migrating at low rates, intrinsic cation defects play a central role in governing the operational lifetime of oxide-ion…”
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Improved Switching Stability and the Effect of an Internal Series Resistor in HfO2/TiOx Bilayer ReRAM Cells by Hardtdegen, Alexander, La Torre, Camilla, Cuppers, Felix, Menzel, Stephan, Waser, Rainer, Hoffmann-Eifert, Susanne

“…Bipolar redox-based resistive random-access memory cells are intensively studied for new storage class memory and beyond von Neumann computing applications…”
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Multidimensional Simulation of Threshold Switching in NbO2 Based on an Electric Field Triggered Thermal Runaway Model by Funck, Carsten, Menzel, Stephan, Aslam, Nabeel, Zhang, Hehe, Hardtdegen, Alexander, Waser, Rainer, Hoffmann-Eifert, Susanne

“…Volatile threshold switching devices have attracted great attention for use as selectors in passive crossbar arrays. These devices show an abrupt hysteretic…”
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KMC Simulation of the Electroforming, Set and Reset Processes in Redox-Based Resistive Switching Devices by Abbaspour, Elhameh, Menzel, Stephan, Hardtdegen, Alexander, Hoffmann-Eifert, Susanne, Jungemann, Christoph

“…This paper presents a physical model to investigate the electroforming, set and reset processes in Redox-based resistive switching RAM based on the valence…”
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Vertical Ge Gate-All-Around Nanowire pMOSFETs With a Diameter Down to 20 nm by Liu, Mingshan, Scholz, Stefan, Hardtdegen, Alexander, Bae, Jin Hee, Hartmann, Jean-Michel, Knoch, Joachim, Grutzmacher, Detlev, Buca, Dan, Zhao, Qing-Tai

“…In this work, we demonstrate vertical Ge gate-all-around (GAA) nanowire pMOSFETs fabricated with a CMOS compatible top-down approach. Vertical Ge nanowires…”
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Improved Switching Stability and the Effect of an Internal Series Resistor in HfO 2 /TiO x Bilayer ReRAM Cells by Hardtdegen, Alexander, La Torre, Camilla, Cuppers, Felix, Menzel, Stephan, Waser, Rainer, Hoffmann-Eifert, Susanne

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Improved Switching Stability and the Effect of an Internal Series Resistor in HfO2/TiO x Bilayer ReRAM Cells by Hardtdegen, Alexander, Camilla La Torre, Cuppers, Felix, Menzel, Stephan, Waser, Rainer, Hoffmann-Eifert, Susanne

“…Bipolar redox-based resistive random-access memory cells are intensively studied for new storage class memory and beyond von Neumann computing applications…”
Get full text

Multidimensional Simulation of Threshold Switching in NbO 2 Based on an Electric Field Triggered Thermal Runaway Model by Funck, Carsten, Menzel, Stephan, Aslam, Nabeel, Zhang, Hehe, Hardtdegen, Alexander, Waser, Rainer, Hoffmann‐Eifert, Susanne

“…Volatile threshold switching devices have attracted great attention for use as selectors in passive crossbar arrays. These devices show an abrupt hysteretic…”
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Internal Cell Resistance as the Origin of Abrupt Reset Behavior in HfO2-Based Devices Determined from Current Compliance Series by Hardtdegen, Alexander, La Torre, Camilla, Hehe Zhang, Funck, Carsten, Menzel, Stephan, Waser, Rainer, Hoffmann-Eifert, Susanne

“…The resistive switching behavior in different HfO 2 /TiO 2 nano crossbar structures of 100 x 100 nm 2 size is analyzed by means of DC voltage sweeps. The…”
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Forming-free metal-oxide ReRAM by oxygen ion implantation process by Wonjoo Kim, Hardtdegen, Alexander, Rodenbucher, Christian, Menzel, Stephan, Wouters, Dirk J., Hoffmann-Eifert, Susanne, Buca, Dan, Waser, Rainer, Rana, Vikas

“…We propose a new method for obtaining forming-free ReRAM devices by oxygen ion implantation (O 2 IIP) in the metal oxide film during the device fabrication…”
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