Search Results - "Hara, Kazuhiko"
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Optimization of capacitively coupled Low Gain Avalanche Diode (AC-LGAD) sensors for precise time and spatial resolution
Published in Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment (01-03-2023)“…Capacitively-coupled Low-Gain Avalanche Diode (AC-LGAD) sensors are being developed for high-energy particle physics experiments as a detector which provides…”
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Study of time resolution of low-gain avalanche detectors
Published in Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment (01-01-2021)“…A Low Gain Avalanche Diode (LGAD) is a semiconductor device that amplifies signals inside a sensor, using an avalanche mechanism. As the charge multiplication…”
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Photoluminescence properties and random lasing behaviors of mist-CVD-grown ZnO disordered nanocrystals on c-plane sapphire substrate
Published in Japanese Journal of Applied Physics (01-10-2021)“…We fabricated ZnO disordered nanocrystals on a c-plane sapphire substrate by mist chemical vapor deposition (mist-CVD). Grown ZnO disordered nanocrystals were…”
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Quantum Cone-A Nano-Source of Light with Dispersive Spectrum Distributed along Height and in Time
Published in Nanomaterials (Basel, Switzerland) (30-09-2024)“…We study a quantum cone, a novel structure composed of multiple quantum dots with gradually decreasing diameters from the base to the top. The dot distribution…”
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Visualizing hidden electron trap levels in Gd3Al2Ga3O12:Ce crystals using a mid-infrared free-electron laser
Published in Applied physics letters (15-01-2018)“…The energy levels of electron traps (namely, defect complexes associated with oxygen vacancies) in Gd3Al2Ga3O12:Ce (GAGG:Ce) were studied at 12 K using…”
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Shallow electron traps formed by Gd2+ ions adjacent to oxygen vacancies in cerium-doped Gd3Al2Ga3O12 crystals
Published in Applied physics letters (23-07-2018)“…To clarify the origin of shallow electron traps in cerium-doped Gd3Al2Ga3O12 (Ce:GAGG), the optical properties of cerium-doped Lu3−xGdxAl2Ga3O12 crystals were…”
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Deep Red Photoluminescence from Cr3+ in Fluorine-Doped Lithium Aluminate Host Material
Published in Materials (01-01-2024)“…Deep red phosphors have attracted much attention for their applications in lighting, medical diagnosis, health monitoring, agriculture, etc. A new phosphor…”
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Quantum Prism-Nano Source of Light with Dispersive Spectrum and Optical Upconversion
Published in Nanomaterials (Basel, Switzerland) (30-07-2024)“…A quantum prism, a new structure, consisting of many quantum wires with a diameter that gradually decreases from the base to the top, is the focus of our…”
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Sensing operations based on hexagonal GaN microdisks acting as whispering-gallery mode optical microcavities
Published in Optics letters (15-06-2015)“…Using room temperature photoluminescence measurements, we have demonstrated a sensing operation based on hexagonal GaN microdisks with a side length of…”
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Lasing action of ZnO nanowires grown by mist chemical vapor deposition using thin Au layer on c-plane sapphire substrate
Published in Japanese Journal of Applied Physics (01-05-2021)“…Abstract ZnO nanowires were grown by mist chemical vapor deposition at a growth temperature of approximately 900 °C (tube furnace temperature) on a c -plane…”
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Fe3+ red phosphors based on lithium aluminates and an aluminum lithium oxyfluoride prepared from LiF as the Li Source
Published in Journal of luminescence (01-02-2017)“…LiF was used as the Li source to prepare Fe3+ red phosphors based on lithium aluminates and an aluminum lithium oxyfluoride. LiF led to the three types of the…”
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Room-temperature intrinsic excitonic luminescence from a hexagonal boron nitride thin film grown on a sapphire substrate by low-pressure chemical vapor deposition using BCl3 as a boron source
Published in Japanese Journal of Applied Physics (01-07-2021)“…A hexagonal boron nitride thin film was prepared on a c-plane sapphire substrate at a substrate temperature of 1200 °C and a reactor pressure of 5 kPa by…”
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ZnO-based nanowires grown by mist chemical vapor deposition on GaN layer using thin Au layer
Published in Japanese Journal of Applied Physics (01-11-2020)“…ZnO and MgZnO nanowires were grown by mist chemical vapor deposition at a high growth temperature of approximately 950 °C-960 °C on a c-plane GaN layer…”
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Radiation hardness of silicon-on-insulator pixel devices
Published in Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment (21-04-2019)“…Silicon-on-Insulator (SOI) CMOS is an attractive technology because of pixel sensor applications for its inherent advantages such as superior isolation of each…”
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Energy location of Ce3+ 4f level and majority carrier type in Gd3Al2Ga3O12:Ce crystals studied by surface photovoltage spectroscopy
Published in Applied physics letters (19-06-2017)“…Gd3Al2Ga3O12:Ce (GAGG:Ce) was studied by surface photovoltage spectroscopy using the ultraviolet photoelectron spectroscopy technique with synchrotron…”
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Evaluation of characteristics of Hamamatsu low-gain avalanche detectors
Published in Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment (21-04-2019)“…Low-gain avalanche detectors (LGADs) are attractive because of their fast response to realize a 4-dimensional (4D) tracker in future experiments in high energy…”
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Investigation of radiation hardness improvement by applying back-gate bias for FD-SOI MOSFETs
Published in Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment (21-04-2019)“…Radiation hardness improvement of fully depleted silicon on insulator (FD-SOI) metal-oxide-silicon field effect transistors (MOSFETs) has been investigated in…”
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Development of a monolithic pixel sensor based on SOI technology for the ILC vertex detector
Published in Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment (21-04-2019)“…SOI detector SOFIST is a pixel sensor optimized for the International Linear Collider vertex detector. SOFIST stores both position and timing information of…”
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Electronic Structure Calculation of Cr3+ and Fe3+ in Phosphor Host Materials Based on Relaxed Structures by Molecular Dynamics Simulation
Published in Technologies (Basel) (27-04-2022)“…The electronic structures of the luminescent center ions Cr3+ and Fe3+ in the deep red phosphors LiAl5O8:Cr3+, α-Al2O3:Cr3+, and γ-LiAlO2:Fe3+ were calculated…”
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