Search Results - "Happy, H."

Optoelectronic mixing with high-frequency graphene transistors by Montanaro, A., Wei, W., De Fazio, D., Sassi, U., Soavi, G., Aversa, P., Ferrari, A. C., Happy, H., Legagneux, P., Pallecchi, E.

“…Graphene is ideally suited for optoelectronics. It offers absorption at telecom wavelengths, high-frequency operation and CMOS-compatibility. We show how high…”
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Author Correction: Optoelectronic mixing with high-frequency graphene transistors by Montanaro, A., Wei, W., De Fazio, D., Sassi, U., Soavi, G., Aversa, P., Ferrari, A. C., Happy, H., Legagneux, P., Pallecchi, E.

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Microwave flexible gas sensor based on polymer multi wall carbon nanotubes sensitive layer by Bahoumina, P., Hallil, H., Lachaud, J.L., Abdelghani, A., Frigui, K., Bila, S., Baillargeat, D., Ravichandran, A., Coquet, P., Paragua, C., Pichonat, E., Happy, H., Rebière, D., Dejous, C.

“…•A feasibility of a passive sensor with electromagnetic transduction in the frequency range up to 6GHz, through the design and simulation, by finite element…”
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80 GHz field-effect transistors produced using high purity semiconducting single-walled carbon nanotubes by Nougaret, L., Happy, H., Dambrine, G., Derycke, V., Bourgoin, J. -P., Green, A. A., Hersam, M. C.

“…This paper presents the high frequency performance of single-walled carbon nanotube (SWNT) field-effect transistors, with channel consisting of dense networks…”
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Fabrication and Characterization of an Epitaxial Graphene Nanoribbon-Based Field-Effect Transistor by Nan Meng, Fernandez, J F, Vignaud, D, Dambrine, G, Happy, H

“…The static and dynamic characteristics of top-gated graphene nanoribbon-based field-effect transistors were investigated. Multilayer graphene was synthesized…”
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Gigahertz frequency flexible carbon nanotube transistors by Chimot, N., Derycke, V., Goffman, M. F., Bourgoin, J. P., Happy, H., Dambrine, G.

“…We investigate the high frequency performances of flexible field-effect transistors based on carbon nanotubes. A large density of mostly aligned carbon…”
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Inkjet printing technology for polymer thermal conductivity measurement by the three omega method by Al-Khudary, N., Cresson, P.Y., Wei, W., Happy, H.G., Lasri, T.

“…The three omega method has proven ability to accurately measure the thermal conductivity of solid and soft materials. Nevertheless, in the case of soft…”
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Gigahertz characterization of a single carbon nanotube by Nougaret, L., Dambrine, G., Lepilliet, S., Happy, H., Chimot, N., Derycke, V., Bourgoin, J.-P.

“…Carbon nanotubes are intrinsically high impedance objects. The high frequency (HF) characterization of these nano-objects is crucial for applications such as…”
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Single Carbon Nanotube Transistor at GHz Frequency by Chaste, J, Lechner, L, Morfin, P, Fève, G, Kontos, T, Berroir, J.-M, Glattli, D. C, Happy, H, Hakonen, P, Plaçais, B

“…We report on microwave operation of top-gated single carbon nanotube transistors. From transmission measurements in the 0.1−1.6 GHz range, we deduce device…”
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Characterization and Modeling of Graphene Transistor Low-Frequency Noise by Grandchamp, B., Fregonese, S., Majek, C., Hainaut, C., Maneux, C., Meng, N., Happy, H., Zimmer, T.

“…This brief presents low-frequency noise measurements on a graphene field-effect transistor with graphene layer decomposed from SiC substrate. The measurements…”
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Fabrication and characterization of low-loss TFMS on silicon substrate up to 220 GHz by Six, G., Prigent, G., Eric Rius, Dambrine, G., Happy, H.

“…This paper presents the results of the fabrication and characterization up to 220 GHz, of thin-film microstrip (TFMS) transmission-line structures. The…”
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Wide- and narrow-band bandpass coplanar filters in the W-frequency band by Eric Rius, Prigent, G., Happy, H., Dambrine, G., Boret, S., Cappy, A.

“…This paper deals with the design of passive coplanar devices in the W-frequency band. As long as coplanar transmission lines are correctly dimensioned,…”
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Improved Monte Carlo algorithm for the simulation of δ-doped AlInAs/GaInAs HEMTs by Mateos, J, Gonzalez, T, Pardo, D, Hoel, V, Happy, H, Cappy, A

“…A classical Monte Carlo (MC) device simulation has been modified to locally introduce the effects of electron degeneracy and nonequilibrium screening. Its…”
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Design of narrow-band DBR planar filters in Si-BCB technology for millimeter-wave applications by Prigent, G., Rius, E., Le Pennec, F., Le Maguer, S., Quendo, C., Six, G., Happy, H.

“…This paper discusses a method used to design planar bandpass filters for millimeter-wave applications in U- and W-band frequency ranges. For technical reasons,…”
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Indonesia Cohort of IO HAT Study to Evaluate Diabetes Management, Control, and Complications in Retrospective and Prospective Periods Among Insulin-Treated Patients with Type 1 and Type 2 Diabetes by Rudijanto, Achmad, Saraswati, Made R, Yunir, Em, Kumala, Poppy, Puteri, Happy Hs, Mandang, Veny Vv

“…hypoglycemia is a major adverse event of insulin therapy for diabetes mellitus patients. The study was conducted to evaluate the incidence of hypoglycemia…”
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Active properties of carbon nanotube field-effect transistors deduced from S parameters measurements by Bethoux, J.-M., Happy, H., Siligaris, A., Dambrine, G., Borghetti, J., Derycke, V., Bourgoin, J.-P.

“…AC performances of carbon nanotube field-effect transistors (CNT-FETs) are analyzed by means of scattering parameters measurements. The active ac properties of…”
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Nonlinear Characterization and Modeling of Carbon Nanotube Field-Effect Transistors by Curutchet, A., Theron, D., Werquin, M., Ducatteau, D., Happy, H., Dambrine, G., Bethoux, J.M., Derycke, V., Gaquiere, C.

“…We report for the first time to our knowledge large-signal measurements performed at 600 MHz and in time domain on carbon nanotube field-effect transistors…”
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Band-pass coplanar filters in the G-frequency band by Wolf, G., Prigent, G., Rius, E., Demichel, S., Leblanc, R., Dambrine, G., Happy, H.

“…This letter is devoted to the design of passive coplanar devices in the G-frequency band from a classical electrical circuit approach. Indeed, as long as…”
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Dynamic response of carbon nanotube field-effect transistors analyzed by S-parameters measurement by Bethoux, J.-M., Happy, H., Dambrine, G., Derycke, V., Goffman, M., Bourgoin, J.-P.

“…Carbon nanotube field-effect transistors (CN-FET) with a metallic back gate have been fabricated. By assembling a number of CNs in parallel, driving currents…”
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An 8-GHz f/sub t/ carbon nanotube field-effect transistor for gigahertz range applications by Bethoux, J.-M., Happy, H., Dambrine, G., Derycke, V., Goffman, M., Bourgoin, J.-P.

“…In this letter, the authors report on the high-frequency (HF) performance of self-assembled carbon nanotube field-effect transistors. HF device structures…”
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