Search Results - "Hao, Yilong"
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Identification of water-cooled wall ash accumulation based on AWGAM-YOLOv8n
Published in Scientific reports (14-10-2024)“…Identifying the ash accumulation generated on the water-cooled walls of the waste incinerator is essential for the cleanup by the robotic arm. This paper…”
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2
Oxygen-sensitive methylation of ULK1 is required for hypoxia-induced autophagy
Published in Nature communications (04-03-2022)“…Hypoxia is a physiological stress that frequently occurs in solid tissues. Autophagy, a ubiquitous degradation/recycling system in eukaryotic cells, renders…”
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Micromachined inertial switch for sub‐g monitoring using gravity‐based threshold compensation
Published in Electronics letters (01-01-2021)“…This letter presents the original design of a microelectromechanical systems inertial switch with ultra‐low threshold (∼0.6 g) and great potential for batch…”
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Enhanced robustness against hot-electron-induced degradation in active-passivation p-GaN gate HEMT
Published in Applied physics letters (04-03-2024)“…The hot-electron-related reliability is an important issue for GaN power devices under harsh operation condition or environment. These high-energy electrons…”
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Correlation between border traps and exposed surface properties in gate recessed normally-off Al2O3/GaN MOSFET
Published in Applied physics letters (04-06-2018)“…We report the effect of the gate recess process and the surface of as-etched GaN on the gate oxide quality and first reveal the correlation between border…”
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6
Role of fibroblast growth factor receptor 4 in cancer
Published in Cancer science (01-10-2018)“…Fibroblast growth factor receptors (FGFR) play a significant role in both embryonic development and in adults. Upon binding with ligands, FGFR signaling is…”
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7
Unveiling the overlooked microbial niches thriving on building exteriors
Published in Environment international (01-05-2024)“…[Display omitted] Rapid urbanization in the Asia-Pacific region is expected to place two-thirds of its population in concrete-dominated urban landscapes by…”
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Quantitative Analysis Method and Correction Algorithm Based on Directivity Beam Pattern for Mismatches between Sensitive Units of Acoustic Dyadic Sensors
Published in Sensors (Basel, Switzerland) (19-06-2023)“…Acoustic dyadic sensors (ADSs) are a new type of acoustic sensor with higher directivity than microphones and acoustic vector sensors, which has great…”
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FGF8 induces epithelial-mesenchymal transition and promotes metastasis in oral squamous cell carcinoma
Published in International journal of oral science (01-03-2021)“…Oral squamous cell carcinoma (OSCC) is one of the most common cancers worldwide, and with 354 864 new cases each year. Cancer metastasis, recurrence, and drug…”
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High-Performance Normally-Off Al2O3/GaN MOSFET Using a Wet Etching-Based Gate Recess Technique
Published in IEEE electron device letters (01-11-2013)Get full text
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11
Design and Optimization of Sensitivity Enhancement Package for MEMS-Based Thermal Acoustic Particle Velocity Sensor
Published in Sensors (Basel, Switzerland) (24-06-2021)“…In this paper, small-sized acoustic horns, the sensitivity enhancement package for the MEMS-based thermal acoustic particle velocity sensor, have been designed…”
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Improvement of PbSn Solder Reliability with Ge Microalloying-Induced Optimization of Intermetallic Compounds Growth
Published in Materials (01-02-2024)“…PbSn solders are used in semiconductor devices for aerospace or military purposes with high levels of reliability requirements. Microalloying has been widely…”
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Schottky-MOS Hybrid Anode AlGaN/GaN Lateral Field-Effect Rectifier With Low Onset Voltage and Improved Breakdown Voltage
Published in IEEE electron device letters (01-10-2017)“…For devices with a 15 micron anode-tocathode distance, nearly 1.5 times increase in the blocking (breakdown) voltage (from 692 to 1030 V ) has been achieved by…”
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14
A GaN HEMT Structure Allowing Self-Terminated, Plasma-Free Etching for High-Uniformity, High-Mobility Enhancement-Mode Devices
Published in IEEE electron device letters (01-04-2016)“…In this letter, a plasma-free etch stop structure is developed for GaN HEMT toward enhancement-mode operation. The self-terminated precision gate recess is…”
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15
Temperature Dependence of the Surface- and Buffer-Induced Current Collapse in GaN High-Electron Mobility Transistors on Si Substrate
Published in IEEE transactions on electron devices (01-08-2015)“…The temperature dependence of current collapse (CC) in AlGaN/GaN high-electron mobility transistors on silicon substrate is studied in this paper. Devices…”
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16
TRIM28 and TRIM27 are required for expressions of PDGFRβ and contractile phenotypic genes by vascular smooth muscle cells
Published in The FASEB journal (01-05-2020)“…Vascular smooth muscle cells (VSMCs) in the normal arterial media continually express contractile phenotypic markers which are reduced dramatically in response…”
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Rapid phosphorylation of glucose-6-phosphate dehydrogenase by casein kinase 2 sustains redox homeostasis under ionizing radiation
Published in Redox biology (01-09-2023)“…Exposure to ionizing radiation leads to oxidative damages in living cells. NADPH provides the indispensable reducing power to regenerate the reduced…”
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Infiltrated IL-17A-producing gamma delta T cells play a protective role in sepsis-induced liver injury and are regulated by CCR6 and gut commensal microbes
Published in Frontiers in cellular and infection microbiology (05-07-2023)“…Sepsis is a common but serious disease in intensive care units, which may induce multiple organ dysfunctions such as liver injury. Previous studies have…”
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NR6A1 regulates lipid metabolism through mammalian target of rapamycin complex 1 in HepG2 cells
Published in Cell communication and signaling (17-07-2019)“…Lipogenesis is required for the optimal growth of many types of cancer cells, it is shown to control the biosynthesis of the lipid bilayer membrane during…”
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Quasi-Vertical GaN-on-Silicon Schottky Barrier Diode Terminated with Hydrogen Modulated In-situ pn Junction
Published in IEEE journal of the Electron Devices Society (01-01-2023)“…In this letter, a high performance quasivertical GaN-on-Si Schottky barrier diode (SBD) was fabricated by combing in-situ p-GaN layer with hydrogen plasma…”
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