Search Results - "Hansson, P.O"

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    Early prediction of falls after stroke: One-year follow-up of the fall study of Gothenburg (FallsGOT) by Samuelsson, C.M., Hansson, P.O., Persson, C.U.

    “…Only a few studies have investigated the occurrence and the determinants of falls after stroke based on variables assessed during the acute phase. In the…”
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    Journal Article
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    Obesity in adolescent men increases the risk of venous thromboembolism in adult life by Glise Sandblad, K., Jern, S., Åberg, M., Robertson, J., Torén, K., Lindgren, M., Adiels, M., Hansson, P.O., Rosengren, A.

    Published in Journal of internal medicine (01-06-2020)
    “…Background As the population of obese and severely obese young adults grows, it is becoming increasingly important to recognize the long‐term risks associated…”
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    Journal Article
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    Bulk properties of very large diameter silicon single crystals by von Ammon, W., Dornberger, E., Hansson, P.O.

    Published in Journal of crystal growth (01-03-1999)
    “…It has been experimentally found that it will be difficult to grow 300 mm or larger diameter crystals with similar quality as for 200 mm or smaller diameter…”
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    Journal Article
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    Locally varying chemical potential and growth surface profile: a case study on solution grown [formula omitted] by Albrecht, M., Christiansen, S., Michler, J., Strunk, H.P., Hansson, P.O., Bauser, E.

    Published in Journal of crystal growth (01-09-1996)
    “…We investigate by transmission electron microscopy and atomic force microscopy the development of the growth surface profile of Si 0.97 Ge 0.03 Si(001) grown…”
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    Journal Article
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    Early growth stages of Ge 0.85Si 0.15 on Si(001) from Bi solution by Dorsch, W., Christiansen, S., Albrecht, M., Hansson, P.O., Bauser, E., Strunk, H.P.

    Published in Surface science (1995)
    “…We investigate by atomic force microscopy the early growth stages of Ge 0.85Si 0.15 grown by solution epitaxy on Si(001). The layers grow in the…”
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    Journal Article
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    Solution growth of epitaxial semiconductor-on-insulator layers by Silier, I., Gutjahr, A., Nagel, N., Hansson, P.O., Czech, E., Konuma, M., Bauser, E., Banhart, F., Köhler, R., Raidt, H., Jenichen, B.

    Published in Journal of crystal growth (01-09-1996)
    “…We have grown defect-free semiconductor-on-insulator (SOI) layers by liquid phase epitaxy. Defect-free Si layers grow laterally over SiO2 by starting from…”
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    Journal Article Conference Proceeding
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    Centrifugal techniques for solution growth of semiconductor layers by Konuma, M., Silier, I., Gutjahr, A., Hansson, P.O., Cristiani, G., Czech, E., Bauser, E., Banhart, F.

    Published in Journal of crystal growth (01-09-1996)
    “…Two centrifugal techniques, I and II, have been applied to grow semiconductor layers in a rotating crucible. Technique I employs centrifugal forces to…”
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    Journal Article Conference Proceeding
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    Growth of high quality cSiGe p-n double layers for high-efficiency solar cells by Hansson, P.O., Konuma, M., Silier, I., Bauser, E., Albrecht, M., Dorsch, W., Strunk, H.P.

    “…We have grown silicon-germanium alloys and p-n junctions of high crystal quality on Si substrates by LPE from Bi, Ga, and In solutions at temperatures between…”
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    Conference Proceeding