Paralinear Oxidation of CVD SiC in Water Vapor

Paralinear Oxidation of CVD SiC in Water Vapor

The oxidation kinetics of CVDSiC were monitored by thermogravimetric analysis (TGA) in a 50% H2O/50% O2 gas mixture flowing at 1.4 cm/s for temperatures between 1200” and 1400°C. Paralinear weight change kinetics were observed as the water vapor oxidized the SiC and simultaneously volatilized the si...

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Bibliographic Details
Published in:Journal of the American Ceramic Society Vol. 80; no. 1; pp. 197 - 205
Main Authors: Opila, Elizabeth J., Hann Jr, Raiford E.
Format: Journal Article
Language:English
Published: Westerville, Ohio American Ceramics Society 01-01-1997
Blackwell
Subjects:
Applied sciences
Building materials. Ceramics. Glasses
Ceramic industries
Ceramics
Chemical industry and chemicals
Exact sciences and technology
Oxidation
Recession
Scale (corrosion)
Silicon carbide
Silicon dioxide
Structural ceramics
Technical ceramics
Volatility
Water vapor
Water
Oxygen
Silicon Carbides
Oxidation
Kinetics
Chemical properties
Non oxide ceramics
Structural ceramic
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Summary:The oxidation kinetics of CVDSiC were monitored by thermogravimetric analysis (TGA) in a 50% H2O/50% O2 gas mixture flowing at 1.4 cm/s for temperatures between 1200” and 1400°C. Paralinear weight change kinetics were observed as the water vapor oxidized the SiC and simultaneously volatilized the silica scale. The long‐term degradation rate of SiC is determined by the volatility of the silica scale. Rapid SiC surface recession rates were estimated from these data for actual aircraft engine combustor conditions.
Bibliography:ArticleID:JACE197
ark:/67375/WNG-5JPPL7QJ-2
istex:90810D800946CBF4A92FFF5AE52F1EB88C04FBD7
Resident Research Associate at NASA—Lewis Research Center.
Nathan S. Jacobson—contributing editor
Member, American Ceramic Society.
Work performed in part under NASA cooperative agreement NCC3‐205 with Cleveland State University.
ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0002-7820
1551-2916
DOI:10.1111/j.1151-2916.1997.tb02810.x