Search Results - "Handziuk, Volodymyr"

Liquid-Gated Two-Layer Silicon Nanowire FETs: Evidence of Controlling Single-Trap Dynamic Processes by Kutovyi, Yurii, Zadorozhnyi, Ihor, Handziuk, Volodymyr, Hlukhova, Hanna, Boichuk, Nazarii, Petrychuk, Mykhaylo, Vitusevich, Svetlana

“…We fabricate two-layer (TL) silicon nanowires (NW) field-effect transistors (FETs) with a liquid gate. The NW devices show advanced characteristics, which…”
Get full text

Effect of Gamma Irradiation on Dynamics of Charge Exchange Processes between Single Trap and Nanowire Channel by Zadorozhnyi, Ihor, Li, Jing, Pud, Sergii, Hlukhova, Hanna, Handziuk, Volodymyr, Kutovyi, Yurii, Petrychuk, Mykhailo, Vitusevich, Svetlana

“…In the present study, transport properties and single trap phenomena in silicon nanowire (NW) field‐effect transistors (FETs) are reported. The dynamic…”
Get full text

Towards pharmacological treatment screening of cardiomyocyte cells using Si nanowire FETs by Zadorozhnyi, Ihor, Hlukhova, Hanna, Kutovyi, Yurii, Handziuk, Volodymyr, Naumova, Nataliia, Offenhaeusser, Andreas, Vitusevich, Svetlana

“…Silicon nanowires (Si NWs) are the most promising candidates for recording biological signals due to improved interfacing properties with cells and the…”
Get full text

Temperature‐Dependent Noise and Transport in Silicon Two‐Layer Nanowire FETs by Kutovyi, Yurii, Zadorozhnyi, Ihor, Handziuk, Volodymyr, Hlukhova, Hanna, Boichuk, Nazarii, Petrychuk, Mykhaylo, Vitusevich, Svetlana

“…Silicon two‐layer (TL) nanowire (NW) field‐effect transistors (FETs) are fabricated by applying a CMOS‐compatible top‐down approach to silicon on insulator…”
Get full text