Search Results - "Hananova, A. V."

Analysis of the GaN-HEMT parameters before and after gamma-neutron irradiation by Tarasova, E. A., Obolensky, S. V., Galkin, O. E., Hananova, A. V., Makarov, A. B.

“…A method for mathematical processing of the results of measurements of the capacitance–voltage characteristics for an AlGaN/GaN HEMT (high electron mobility…”
Get full text

Theoretical and experimental studies of the current–voltage and capacitance–voltage of HEMT structures and field-effect transistors by Tarasova, E. A., Obolenskaya, E. S., Hananova, A. V., Obolensky, S. V., Zemliakov, V. E., Egorkin, V. I., Nezhenzev, A. V., Saharov, A. V., Zazul’nokov, A. F., Lundin, V. V., Zavarin, E. E., Medvedev, G. V.

“…The sensitivity of classical n + / n – GaAs and AlGaN/GaN structures with a 2D electron gas (HEMT) and field-effect transistors based on these structures to…”
Get full text