Search Results - "Han, Daxin"

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  1. 1

    Ultralight, Flexible, and Biomimetic Nanocellulose/Silver Nanowire Aerogels for Electromagnetic Interference Shielding by Zeng, Zhihui, Wu, Tingting, Han, Daxin, Ren, Qun, Siqueira, Gilberto, Nyström, Gustav

    Published in ACS nano (24-03-2020)
    “…Ultralight and highly flexible biopolymer aerogels, composed of biomimetic cellular microstructures formed from cellulose nanofibers and silver nanowires, are…”
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    Journal Article
  2. 2

    Nanocellulose‐MXene Biomimetic Aerogels with Orientation‐Tunable Electromagnetic Interference Shielding Performance by Zeng, Zhihui, Wang, Changxian, Siqueira, Gilberto, Han, Daxin, Huch, Anja, Abdolhosseinzadeh, Sina, Heier, Jakob, Nüesch, Frank, Zhang, Chuanfang (John), Nyström, Gustav

    Published in Advanced science (01-08-2020)
    “…Designing lightweight nanostructured aerogels for high‐performance electromagnetic interference (EMI) shielding is crucial yet challenging. Ultrathin cellulose…”
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  3. 3

    Clinching of Carbon Fiber-Reinforced Composite and Aluminum Alloy by Han, Daxin, Hu, Chengliang

    Published in Metals (Basel ) (01-06-2024)
    “…The extensive use of carbon fiber-reinforced composites and aluminum alloys represents the highest level of automotive body-in-white lightweighting. The…”
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  4. 4

    A physical route to porous ethyl cellulose microspheres loaded with TiO2 nanoparticles by Cai, Weiwei, Yang, Hui, Han, Daxin, Guo, Xingzhong

    Published in Journal of applied polymer science (05-10-2014)
    “…ABSTRACT Porous ethyl cellulose (EC) microspheres were prepared via a physical method in oil‐in‐water (O/W) emulsions. The morphologies and pore structures of…”
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    Journal Article
  5. 5

    Mechanical joining of glass fibre reinforced polymer (GFRP) through an innovative solid self-piercing rivet by Han, Daxin, Yang, Keke, Meschut, Gerson

    Published in Journal of materials processing technology (01-10-2021)
    “…•A novel pre-hole-free mechanical joining process for joining FRP-FRP combinations both with and without adhesive.•Determination of the influences of rivet and…”
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  6. 6

    Flexible and Ultrathin Waterproof Cellular Membranes Based on High‐Conjunction Metal‐Wrapped Polymer Nanofibers for Electromagnetic Interference Shielding by Zeng, Zhihui, Jiang, Fuze, Yue, Yang, Han, Daxin, Lin, Luchan, Zhao, Shanyu, Zhao, Yi‐Bo, Pan, Zhengyuan, Li, Congju, Nyström, Gustav, Wang, Jing

    Published in Advanced materials (Weinheim) (01-05-2020)
    “…Ultrathin, lightweight, and flexible electromagnetic interference (EMI) shielding materials are urgently demanded to address EM radiation pollution. Efficient…”
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  7. 7

    Ultrafine Cellulose Nanofiber‐Assisted Physical and Chemical Cross‐Linking of MXene Sheets for Electromagnetic Interference Shielding by Wu, Na, Zeng, Zhihui, Kummer, Nico, Han, Daxin, Zenobi, Renato, Nyström, Gustav

    Published in Small methods (01-12-2021)
    “…Transition metal carbides and nitrides (MXenes) have shown great potential for constructing thin, high‐performance electromagnetic interference (EMI) shields…”
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  8. 8

    Single-step self-punching lockbolt process for aluminum sheets without pre-hole by Han, Daxin, Kappe, Fabian, Vorderbrüggen, Julian, Jendrny, Jörg, Gorr, Eugen, Meschut, Gerson

    Published in Journal of manufacturing processes (30-04-2024)
    “…For the mechanical joining of aviation-grade aluminum alloys, the study introduces an innovative approach using self-punching lockbolts. This method involves…”
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  9. 9

    InP/GaAsSb Double Heterojunction Bipolar Transistor Emitter-Fin Technology With fMAX = 1.2 THz by Arabhavi, Akshay M., Ciabattini, Filippo, Hamzeloui, Sara, Fluckiger, Ralf, Saranovac, Tamara, Han, Daxin, Marti, Diego, Bonomo, Giorgio, Chaudhary, Rimjhim, Ostinelli, Olivier, Bolognesi, Colombo R.

    Published in IEEE transactions on electron devices (01-04-2022)
    “…We report a new InP/GaAsSb double heterojunction bipolar transistor (DHBT) emitter fin architecture with a record <inline-formula> <tex-math…”
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  10. 10

    InAs Channel Inset Effects on the DC, RF, and Noise Properties of InP pHEMTs by Ruiz, Diego C., Saranovac, Tamara, Han, Daxin, Hambitzer, Anna, Arabhavi, Akshay M., Ostinelli, Olivier, Bolognesi, C. R.

    Published in IEEE transactions on electron devices (01-11-2019)
    “…GaInAs/InAs composite channels in InP-based pHEMTs enable wideband and/or low-noise performances because of their superior carrier transport properties. To…”
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  11. 11

    High-Speed Steep-Slope GaInAs Impact Ionization MOSFETs (I-MOS) With SS = 1.25 mV/dec-Part I: Material and Device Characterization, DC Performance, and Simulation by Han, Daxin, Bonomo, Giorgio, Ruiz, Diego Calvo, Arabhavi, Akshay Mahadev, Ostinelli, Olivier J. S., Bolognesi, Colombo R.

    Published in IEEE transactions on electron devices (01-07-2022)
    “…Digital electronics power consumption evolved into a major concern: at the current pace, general-purpose computing energy consumption will exceed global energy…”
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  12. 12

    Impact of Reduced Gate‐to‐Source Spacing on Indium Phosphide High Electron Mobility Transistor Performance by Calvo Ruiz, Diego, Han, Daxin, Bonomo, Giorgio, Saranovac, Tamara, Ostinelli, Olivier, Bolognesi, Colombo R.

    “…Indium phosphide (InP)‐based high electron mobility transistors (HEMTs) with an offset gate enable higher maximum oscillation frequency (fMAX) values because…”
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  13. 13

    High-Speed Steep-Slope GaInAs Impact Ionization MOSFETs (I-MOS) With SS = 1.25 mV/dec-Part II: Dynamic Switching and RF Performance by Han, Daxin, Bonomo, Giorgio, Ruiz, Diego Calvo, Arabhavi, Akshay Mahadev, Ostinelli, Olivier J. S., Bolognesi, Colombo R.

    Published in IEEE transactions on electron devices (01-07-2022)
    “…Part I of this work described narrow bandgap GaInAs-based I-MOS devices with a minimum steep slope <inline-formula> <tex-math notation="LaTeX">SS_{min}…”
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  14. 14

    InP/GaAsSb Double Heterojunction Bipolar Transistor Emitter-Fin Technology With f MAX = 1.2 THz by Arabhavi, Akshay M., Ciabattini, Filippo, Hamzeloui, Sara, Fluckiger, Ralf, Saranovac, Tamara, Han, Daxin, Marti, Diego, Bonomo, Giorgio, Chaudhary, Rimjhim, Ostinelli, Olivier, Bolognesi, Colombo R.

    Published in IEEE transactions on electron devices (01-04-2022)
    “…[Formula Omitted] larger than previously reported terahertz (THz) DHBTs, representing a breakthrough in THz transistor scalability. This attractive performance…”
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  15. 15

    Low-Noise Microwave Performance of 30 nm GaInAs MOS-HEMTs: Comparison to Low-Noise HEMTs by Han, Daxin, Ruiz, Diego C., Bonomo, Giorgio, Saranovac, Tamara, Ostinelli, Olivier, Bolognesi, Colombo R.

    Published in IEEE electron device letters (01-09-2020)
    “…GaInAs-based Metal Oxide Semiconductor High Electron Mobility Transistors (MOS-HEMTs) can in principle combine the wide bandwidth of HEMTs to the low gate…”
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  16. 16

    A physical route to porous ethyl cellulose microspheres loaded with TiO 2 nanoparticles by Cai, Weiwei, Yang, Hui, Han, Daxin, Guo, Xingzhong

    Published in Journal of applied polymer science (05-10-2014)
    “…ABSTRACT Porous ethyl cellulose (EC) microspheres were prepared via a physical method in oil‐in‐water (O/W) emulsions. The morphologies and pore structures of…”
    Get full text
    Journal Article
  17. 17

    A physical route to porous ethyl cellulose microspheres loaded with TiO sub(2) nanoparticles by Cai, Weiwei, Yang, Hui, Han, Daxin, Guo, Xingzhong

    Published in Journal of applied polymer science (01-10-2014)
    “…Porous ethyl cellulose (EC) microspheres were prepared via a physical method in oil-in-water (O/W) emulsions. The morphologies and pore structures of the…”
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    Journal Article
  18. 18

    Ultrafine Cellulose Nanofiber‐Assisted Physical and Chemical Cross‐Linking of MXene Sheets for Electromagnetic Interference Shielding (Small Methods 12/2021) by Wu, Na, Zeng, Zhihui, Kummer, Nico, Han, Daxin, Zenobi, Renato, Nyström, Gustav

    Published in Small methods (15-12-2021)
    “…Structural Phase Transition In article number 2100889, Zeng, Zenobi, Nyström, and co‐workers have consolidated a combination of cellulose nanofibers from…”
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  19. 19

    Effects of Electrochemical Etching on InP HEMT Fabrication by Saranovac, Tamara, Ruiz, Diego C., Han, Daxin, Arabhavi, Akshay M., Ostinelli, Olivier, Bolognesi, C. R.

    “…Optimum device performance in terms of noise and gain of AlInAs/GaInAs/InP High Electron Mobility Transistors (HEMTs) requires minimizing the contact…”
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  20. 20

    Synthesis of “brain-like” hierarchical porous microspheres by emulsion-solvent evaporation by Zhu, Wenjun, Ren, Jing, Wang, Zichen, Han, Daxin, Yang, Hui, Guo, Xingzhong

    Published in Materials letters (01-09-2015)
    “…Hierarchical porous microspheres have been prepared by emulsion-solvent evaporation with natural carnauba wax as raw material in the presence of surfactant…”
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