Search Results - "Halpin, John E"

  • Showing 1 - 5 results of 5
Refine Results
  1. 1

    Grain-by-Grain Compositional Variations and Interstitial MetalsA New Route toward Achieving High Performance in Half-Heusler Thermoelectrics by Barczak, Sonia A, Halpin, John E, Buckman, Jim, Decourt, Rodolphe, Pollet, Michael, Smith, Ronald I, MacLaren, Donald A, Bos, Jan-Willem G

    Published in ACS applied materials & interfaces (07-02-2018)
    “…Half-Heusler alloys based on TiNiSn are promising thermoelectric materials characterized by large power factors and good mechanical and thermal stabilities,…”
    Get full text
    Journal Article
  2. 2

    Laser-vibrometric ultrasonic characterization of resonant modes and quality factors of Ge membranes by Trushkevych, Oksana, A Shah, Vishal, Myronov, Maksym, E Halpin, John, D Rhead, Stephen, J Prest, Martin, R Leadley, David, S Edwards, Rachel

    “…The vibrations of a single-crystal germanium (Ge) membrane are studied in air and vacuum using laser vibrometry, in order to determine mechanical properties…”
    Get full text
    Journal Article
  3. 3

    A Correlative Study of Interfacial Segregation in a Cu-Doped TiNiSn Thermoelectric half-Heusler Alloy by Halpin, John E., Jenkins, Benjamin, Moody, Michael P., Webster, Robert W.H., Bos, Jan-Willem G., Bagot, Paul A.J., MacLaren, Donald A.

    Published in ACS applied electronic materials (27-09-2022)
    “…The performance of thermoelectric materials depends on both their atomic-scale chemistry and the nature of microstructural details such as grain boundaries and…”
    Get full text
    Journal Article
  4. 4

    Silicon germanium materials for terahertz emission by Halpin, John E

    Published 01-01-2015
    “…Terahertz radiation has many uses in a broad range of fields including medicine and healthcare security, earth science, production monitoring and astronomy…”
    Get full text
    Dissertation
  5. 5

    Thermally grown GeO2 on epitaxial Ge on Si(001) substrate by Casteleiro, C., Halpin, J. E., Shah, V. A., Myronov, M., Leadley, D. R.

    “…We show good quality (GeO 2 ) layer grown on epitaxial germanium on a Si substrate. The oxidation was done at two temperatures, 450°C and 475°C. The oxidation…”
    Get full text
    Conference Proceeding