Search Results - "Halpin, J. E."

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  1. 1

    An in-situ approach for preparing atom probe tomography specimens by xenon plasma-focussed ion beam by Halpin, J.E., Webster, R.W.H., Gardner, H., Moody, M.P., Bagot, P.A.J., MacLaren, D.A.

    Published in Ultramicroscopy (01-07-2019)
    “…•Atom probe tomography samples are produced in-situ by Xe plasma focussed ion beam.•Production is rapid and automated, obviating need for conventional lift-out…”
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    Journal Article
  2. 2

    Flat single crystal Ge membranes for sensors and opto-electronic integrated circuitry by Shah, V.A., Myronov, M., Rhead, S.D., Halpin, J.E., Shchepetov, A., Prest, M.J., Prunnila, M., Whall, T.E., Parker, E.H.C., Leadley, D.R.

    Published in Solid-state electronics (01-08-2014)
    “…A thin, flat and single crystal membrane on which to mount sensors is generally required for integration with electronics through standard silicon processing…”
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    Journal Article
  3. 3

    Multiple scattering in scanning helium microscopy by Lambrick, S. M., Vozdecký, L., Bergin, M., Halpin, J. E., MacLaren, D. A., Dastoor, P. C., Przyborski, S. A., Jardine, A. P., Ward, D. J.

    Published in Applied physics letters (10-02-2020)
    “…Using atom beams to image the surface of samples in real space is an emerging technique that delivers unique contrast from delicate samples. Here, we explore…”
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    Journal Article
  4. 4

    Tensile strain mapping in flat germanium membranes by Rhead, S. D., Halpin, J. E., Shah, V. A., Myronov, M., Patchett, D. H., Allred, P. S., Kachkanov, V., Dolbnya, I. P., Reparaz, J. S., Wilson, N. R., Sotomayor Torres, C. M., Leadley, D. R.

    Published in Applied physics letters (28-04-2014)
    “…Scanning X-ray micro-diffraction has been used as a non-destructive probe of the local crystalline quality of a thin suspended germanium (Ge) membrane. A…”
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    Journal Article
  5. 5

    Spontaneous formation of nanostructures during pulsed laser deposition of epitaxial half-Heusler TiNiSn on MgO(001) by Webster, R. W. H., Halpin, J. E., Popuri, S. R., Bos, J.-W. G., MacLaren, D. A.

    Published in APL materials (01-01-2019)
    “…The half-Heusler alloy TiNiSn is a promising material for thermoelectric applications that is inexpensive and non-toxic. We demonstrate the epitaxial growth of…”
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    Journal Article
  6. 6

    Feet first. Diabetes care by Halpin-Landry, J E, Goldsmith, S

    Published in The American journal of nursing (01-02-1999)
    “…Halpin-Landry and Goldsmith discuss the etiology of diabetic foot ulcers, management plans for such ulcers, and patient education…”
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    Journal Article
  7. 7

    Electrical properties and strain distribution of Ge suspended structures by Shah, V.A., Rhead, S.D., Finch, J., Myronov, M., Reparaz, J.S., Morris, R.J., Wilson, N.R., Kachkanov, V., Dolbnya, I.P., Halpin, J.E., Patchett, D., Allred, P., Colston, G., Sawhney, K.J.S., Sotomayor Torres, C.M., Leadley, D.R.

    Published in Solid-state electronics (01-06-2015)
    “…Germanium membranes and microstructures of 50–1000nm thickness have been fabricated by a combination of epitaxial growth on a Si substrate and simple etching…”
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    Journal Article
  8. 8

    Weak anti-localization behavior of high mobility 2D hole gas in a strained Ge QW heterostructure by Foronda, J., Morrison, C., Myronov, M., Halpin, J. E., Rhead, S. D., Leadley, D. R.

    “…We have measured the low temperature and low field MR of a high mobility Ge 2DHG. The resulting MR curves demonstrate WL-like behavior at temperatures below 2K…”
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    Conference Proceeding
  9. 9

    Quantum transport of a high mobility two dimensional hole gas in a strained Ge quantum well by Morrison, C., Myronov, M., Foronda, J., Casteleiro, C., Halpin, J. E., Rhead, S. D., Leadley, D. R.

    “…A high mobility (780,000 cm 2 /Vs) 2DHG has been created in a strained Ge quantum well structure, through B modulation doping. The mobility and carrier density…”
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    Conference Proceeding
  10. 10

    Tensile strain mapping in flat germanium membranes by Rhead, S. D., Shah, V. A., Halpin, J. E., Myronov, M., Patchett, D. H., Allred, P. S., Kachkanov, V., Dolbnya, I. P., Wilson, N. R., Leadley, D. R.

    “…The membranes have the potential to be excellent growth and integration platforms: compared to bulk Ge epitaxially grown on Si (001) they are perfectly flat…”
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    Conference Proceeding
  11. 11

    Thermally grown GeO2 on epitaxial Ge on Si(001) substrate by Casteleiro, C., Halpin, J. E., Shah, V. A., Myronov, M., Leadley, D. R.

    “…We show good quality (GeO 2 ) layer grown on epitaxial germanium on a Si substrate. The oxidation was done at two temperatures, 450°C and 475°C. The oxidation…”
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    Conference Proceeding
  12. 12

    Structural and electrical characterization of SiGe heterostructures containing a pure Ge strained quantum well by Hassan, A. H. A., Mironov, O. A., Dobbie, A., Morris, J. H., Gabani, S., Feher, A., Cizmar, E., Andrievskii, V. V., Berkutov, I. B.

    “…In this paper we present structural characterization and magneto-transport properties of the two dimensional hole gas in strained germanium heterostructures…”
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    Conference Proceeding
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    Caring for the person with a stoma and systemic lupus erythematous by Williams, S G, Halpin-Landry, J E

    Published in Journal of enterostomal therapy (01-05-1990)
    “…It is obvious to see why the ET nurse caring for the individual with a diagnosis of SLE should be familiar with the many facets of the illness. These…”
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    Journal Article