Search Results - "Hakey, Mark C"

Heavy Ion Testing With Iron at 1 GeV/amu by Pellish, Jonathan A, Xapsos, Michael A, LaBel, Kenneth A, Marshall, Paul W, Heidel, David F, Rodbell, Kenneth P, Hakey, Mark C, Dodd, Paul E, Shaneyfelt, Marty R, Schwank, James R, Baumann, Robert C, Xiaowei Deng, Marshall, Andrew, Sierawski, Brian D, Black, Jeffrey D, Reed, Robert A, Schrimpf, Ronald D, Kim, Hak S, Berg, Melanie D, Campola, Michael J, Friendlich, Mark R, Perez, Christopher E, Phan, Anthony M, Seidleck, Christina M

“…A 1 GeV/amu 56 Fe ion beam allows for true 90° tilt irradiations of various microelectronic components and reveals relevant upset trends at the GCR flux energy…”
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Low Energy Proton Single-Event-Upset Test Results on 65 nm SOI SRAM by Heidel, D.F., Marshall, P.W., LaBel, K.A., Schwank, J.R., Rodbell, K.P., Hakey, M.C., Berg, M.D., Dodd, P.E., Friendlich, M.R., Phan, A.D., Seidleck, C.M., Shaneyfelt, M.R., Xapsos, M.A.

“…Experimental results are presented on proton induced single-event-upsets (SEU) on a 65 nm silicon-on-insulator (SOI) SRAM. The low energy proton SEU results…”
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Single-Event Upsets and Multiple-Bit Upsets on a 45 nm SOI SRAM by Heidel, D.F., Marshall, P.W., Pellish, J.A., Rodbell, K.P., LaBel, K.A., Schwank, J.R., Rauch, S.E., Hakey, M.C., Berg, M.D., Castaneda, C.M., Dodd, P.E., Friendlich, M.R., Phan, A.D., Seidleck, C.M., Shaneyfelt, M.R., Xapsos, M.A.

“…Experimental results are presented on single-bit-upsets (SBU) and multiple-bit-upsets (MBU) on a 45 nm SOI SRAM. The accelerated testing results show the…”
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Heavy ion testing at the galactic cosmic ray energy peak by Pellish, J. A., Xapsos, M. A., LaBel, K. A., Marshall, P. W., Heidel, D. F., Rodbell, K. P., Hakey, M. C., Dodd, P. E., Shaneyfelt, M. R., Schwank, J. R., Baumann, R. C., Deng, X., Marshall, A., Sierawski, B. D., Black, J. D., Reed, R. A., Schrimpf, R. D., Kim, H. S., Berg, M. D., Campola, M. J., Friendlich, M. R., Perez, C. E., Phan, A. M., Seidleck, C. M.

“…A 1 GeV/u 56 Fe ion beam allows for true 90° tilt irradiations of various microelectronic components and reveals relevant upset trends for an abundant element…”
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