Isolation and characterization of large-area GaSb membranes grown on GaAs substrates

We investigate substrate removal techniques for GaSb epilayers grown on GaAs substrates. The GaSb epilayers are grown metamorphically on the GaAs substrate by inducing large areas of 90° interfacial misfit dislocation arrays at the GaSb/GaAs interface. Three structures have been investigated, each w...

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Bibliographic Details
Published in:	2013 IEEE 39th Photovoltaic Specialists Conference (PVSC) pp. 2459 - 2461
Main Authors:	Renteria, Emma J., Ahirwar, Pankaj, Clark, Stephen P. R., Romero, Orlando S., Addamane, Sadhvikas, Hains, Chris P., Rotter, Tom J., Dawson, Larry R., Lavrova, Olga, Lester, Luke F., Balakrishnan, Ganesh
Format:	Conference Proceeding
Language:	English
Published:	IEEE 01-06-2013
Subjects:	Epitaxial growth Gallium arsenide III-V semiconductor materials Rough surfaces semiconductor epitaxial layers semiconductor growth Substrates Surface morphology Surface roughness Surface treatment
Online Access:	Get full text
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Summary:	We investigate substrate removal techniques for GaSb epilayers grown on GaAs substrates. The GaSb epilayers are grown metamorphically on the GaAs substrate by inducing large areas of 90° interfacial misfit dislocation arrays at the GaSb/GaAs interface. Three structures have been investigated, each with a different etch stop process such that the GaAs substrate is removed without affecting the GaSb epi-layer. The GaSb membranes upon isolation are characterized for crystal quality using x-ray diffraction and for surface quality using atomic force microscopy.
ISSN:	0160-8371
DOI:	10.1109/PVSC.2013.6744973