Search Results - "Haiding Sun"

Ultraviolet optoelectronic devices based on AlGaN-SiC platform: Towards monolithic photonics integration system by Huang, Chen, Zhang, Haochen, Sun, Haiding

“…Rapid advancement of wide-bandgap AlGaN semiconductor materials offers tremendous opportunities in the field of ultraviolet (UV) optoelectronics for a wide…”
Get full text

Recent Advances on III‐Nitride Nanowire Light Emitters on Foreign Substrates – Toward Flexible Photonics by Sun, Haiding, Li, Xiaohang

“…Flexible electronic and photonic devices have received broad interest in the past, due to their compact size, new functionalities, and other merits which…”
Get full text

Temperature-dependent photodetection behavior of AlGaN/GaN-based ultraviolet phototransistors by Yang, Lei, Zhang, Haochen, Sun, Yue, Hu, Kunpeng, Xing, Zhanyong, Liang, Kun, Fang, Shi, Wang, Danhao, Yu, Huabin, Kang, Yang, Sun, Haiding

“…In this work, we investigated the temperature-dependent photodetection behavior of a high-performance AlGaN/GaN-based ultraviolet phototransistor (UVPT)…”
Get full text

Unambiguously Enhanced Ultraviolet Luminescence of AlGaN Wavy Quantum Well Structures Grown on Large Misoriented Sapphire Substrate by Sun, Haiding, Mitra, Somak, Subedi, Ram Chandra, Zhang, Yi, Guo, Wei, Ye, Jichun, Shakfa, Mohammad Khaled, Ng, Tien Khee, Ooi, Boon S., Roqan, Iman S., Zhang, Zihui, Dai, Jiangnan, Chen, Changqing, Long, Shibing

“…High‐quality epitaxy consisting of Al1−xGaxN/Al1−yGayN multiple quantum wells (MQWs) with sharp interfaces and emitting at ≈280 nm is successfully grown on…”
Get full text

Valence and conduction band offsets of β-Ga2O3/AlN heterojunction by Sun, Haiding, Torres Castanedo, C. G., Liu, Kaikai, Li, Kuang-Hui, Guo, Wenzhe, Lin, Ronghui, Liu, Xinwei, Li, Jingtao, Li, Xiaohang

“…Both β-Ga2O3 and wurtzite AlN have wide bandgaps of 4.5–4.9 and 6.1 eV, respectively. We calculated the in-plane lattice mismatch between the (−201) plane of…”
Get full text

Wurtzite BAlN and BGaN alloys for heterointerface polarization engineering by Liu, Kaikai, Sun, Haiding, AlQatari, Feras, Guo, Wenzhe, Liu, Xinwei, Li, Jingtao, Torres Castanedo, Carlos G, Li, Xiaohang

“…The spontaneous polarization (SP) and piezoelectric (PZ) constants of BxAl1-xN and BxGa1-xN (0 ≤ x ≤ 1) ternary alloys were calculated with the hexagonal…”
Get full text

Band alignment of B0.14Al0.86N/Al0.7Ga0.3N heterojunction by Sun, Haiding, Park, Young Jae, Li, Kuang-Hui, Torres Castanedo, C. G., Alowayed, Abdulmohsen, Detchprohm, Theeradetch, Dupuis, Russell D., Li, Xiaohang

“…Owing to large bandgaps of BAlN and AlGaN alloys, their heterojunctions have the potential to be used in deep ultraviolet and power electronic device…”
Get full text

Enhanced Light Extraction Efficiency of AlGaN-Based Deep Ultraviolet Light-Emitting Diodes by Incorporating High-Reflective n-Type Electrode Made of Cr/Al by Gao, Yang, Chen, Qian, Zhang, Shuang, Long, Hanling, Dai, Jiangnan, Sun, Haiding, Chen, Changqing

“…Mercury-free semiconductor deep ultraviolet light-emitting diodes (DUV-LEDs) still suffer from low power efficiencies due to extremely poor light extraction…”
Get full text

Effect of in-situ SiNx grown with different carrier gas on structural and electrical properties of GaN-based MISHEMTs by Zhang, Haochen, Chen, Yao, Sun, Yue, Yang, Lei, Hu, Kunpeng, Huang, Zhe, Liang, Kun, Xing, Zhanyong, Wang, Hu, Zhang, Mingshuo, Guo, Shiping, Sun, Haiding

“…In this work, the effect of in situ SiNx grown with different carrier gas on the structural and electrical properties of the SiNx/AlGaN/GaN MIS-HEMTs is…”
Get full text

Observation of polarity-switchable photoconductivity in III-nitride/MoSx core-shell nanowires by Wang, Danhao, Wu, Wentiao, Fang, Shi, Kang, Yang, Wang, Xiaoning, Hu, Wei, Yu, Huabin, Zhang, Haochen, Liu, Xin, Luo, Yuanmin, He, Jr-Hau, Fu, Lan, Long, Shibing, Liu, Sheng, Sun, Haiding

“…III–V semiconductor nanowires are indispensable building blocks for nanoscale electronic and optoelectronic devices. However, solely relying on their intrinsic…”
Get full text

Demonstration of AlGaN/GaN HEMTs on vicinal sapphire substrates with large misoriented angles by Zhang, Haochen, Sun, Yue, Song, Kang, Xing, Chong, Yang, Lei, Wang, Danhao, Yu, Huabin, Xiang, Xueqiang, Gao, Nan, Xu, Guangwei, Sun, Haiding, Long, Shibing

“…In this work, the electrical characteristics of AlGaN/GaN high-electron-mobility transistors (HEMTs) on vicinal c-plane sapphire substrates with different…”
Get full text

Lateral‐Polarity Structure of AlGaN Quantum Wells: A Promising Approach to Enhancing the Ultraviolet Luminescence by Guo, Wei, Sun, Haiding, Torre, Bruno, Li, Junmei, Sheikhi, Moheb, Jiang, Jiean, Li, Hongwei, Guo, Shiping, Li, Kuang‐Hui, Lin, Ronghui, Giugni, Andrea, Di Fabrizio, Enzo, Li, Xiaohang, Ye, Jichun

“…Aluminum‐gallium‐nitride alloys (Al x Ga1– x N, 0 ≤ x ≤ 1) can emit light covering the ultraviolet spectrum from 210 to 360 nm. However, these emitters have…”
Get full text

Influence of TMAl preflow on AlN epitaxy on sapphire by Sun, Haiding, Wu, Feng, Park, Young Jae, Al tahtamouni, T. M., Li, Kuang-Hui, Alfaraj, Nasir, Detchprohm, Theeradetch, Dupuis, Russell D., Li, Xiaohang

“…The trimethylaluminum (TMAl) preflow process has been widely applied on sapphire substrates prior to growing Al-polar AlN films by metalorganic chemical vapor…”
Get full text

Investigating various metal contacts for p-type delafossite α-CuGaO2 to fabricate ultraviolet photodetector by Abrari, Masoud, Ghanaatshoar, Majid, Malvajerdi, Shahab Sharifi, Gholamhosseini, Saeb, Hosseini, Alireza, Sun, Haiding, Mohseni, Seyed Majid

“…Delafossite semiconductors have attracted substantial attention in the field of electro-optics owing to their unique properties and availability of p-type…”
Get full text

Enhanced Performance of an AlGaN-Based Deep-Ultraviolet LED Having Graded Quantum Well Structure by Yu, Huabin, Chen, Qian, Ren, Zhongjie, Tian, Meng, Long, Shibing, Dai, Jiangnan, Chen, Changqing, Sun, Haiding

“…AlGaN-based deep ultraviolet light-emitting diodes (DUV LEDs) suffer from severe quantum confined Stark effect (QCSE) due to the strong polarization field in…”
Get full text

Optoelectronic synapses with chemical-electric behaviors in gallium nitride semiconductors for biorealistic neuromorphic functionality by Liu, Xin, Wang, Danhao, Chen, Wei, Kang, Yang, Fang, Shi, Luo, Yuanmin, Luo, Dongyang, Yu, Huabin, Zhang, Haochen, Liang, Kun, Fu, Lan, Ooi, Boon S., Liu, Sheng, Sun, Haiding

“…Optoelectronic synapses, leveraging the integration of classic photo-electric effect with synaptic plasticity, are emerging as building blocks for artificial…”
Get full text

Photoinduced entropy of InGaN/GaN p-i-n double-heterostructure nanowires by Alfaraj, Nasir, Mitra, Somak, Wu, Feng, Ajia, Idris A., Janjua, Bilal, Prabaswara, Aditya, Aljefri, Renad A., Sun, Haiding, Khee Ng, Tien, Ooi, Boon S., Roqan, Iman S., Li, Xiaohang

“…The photoinduced entropy of InGaN/GaN p-i-n nanowires was investigated using temperature-dependent (6–290 K) photoluminescence. We also analyzed the…”
Get full text

Demonstration of AlGaN/GaN-based ultraviolet phototransistor with a record high responsivity over 3.6 × 107 A/W by Zhang, Haochen, Liang, Fangzhou, Song, Kang, Xing, Chong, Wang, Danhao, Yu, Huabin, Huang, Chen, Sun, Yue, Yang, Lei, Zhao, Xiaolong, Sun, Haiding, Long, Shibing

“…In this work, we demonstrate a high-performance ultraviolet phototransistor (UVPT) based on the AlGaN/GaN high-electron mobility transistor (HEMT)…”
Get full text

Droop-free AlxGa1-xN/AlyGa1-yN quantum-disks-in-nanowires ultraviolet LED emitting at 337 nm on metal/silicon substrates by Janjua, Bilal, Sun, Haiding, Zhao, Chao, Anjum, Dalaver H, Priante, Davide, Alhamoud, Abdullah A, Wu, Feng, Li, Xiaohang, Albadri, Abdulrahman M, Alyamani, Ahmed Y, El-Desouki, Munir M, Ng, Tien Khee, Ooi, Boon S

Get full text

III-Nitride Deep UV LED Without Electron Blocking Layer by Ren, Zhongjie, Lu, Yi, Yao, Hsin-Hung, Sun, Haiding, Liao, Che-Hao, Dai, Jiangnan, Chen, Changqing, Ryou, Jae-Hyun, Yan, Jianchang, Wang, Junxi, Li, Jinmin, Li, Xiaohang

“…AlGaN-based deep UV (DUV) LEDs generally employ a p-type electron blocking layer (EBL) to suppress electron overflow. However, Al-rich III-nitride EBL can…”
Get full text