Search Results - "Hahn, Herwig"

Self-Aligned Process for Selectively Etched p-GaN-Gated AlGaN/GaN-on-Si HFETs by Lukens, Gerrit, Hahn, Herwig, Kalisch, Holger, Vescan, Andrei

“…A process for an enhancement-mode p-GaN-gated heterostructure field-effect transistor with self-aligned structuring of the p-GaN is proposed. A gate-first…”
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Development and analysis of thick GaN drift layers on 200 mm CTE-matched substrate for vertical device processing by Gonçalez Filho, Walter, Borga, Matteo, Geens, Karen, Cingu, Deepthi, Chatterjee, Urmimala, Banerjee, Sourish, Vohra, Anurag, Han, Han, Minj, Albert, Hahn, Herwig, Marx, Matthias, Fahle, Dirk, Bakeroot, Benoit, Decoutere, Stefaan

“…This work reports the epitaxial growth of 8.5 µm-thick GaN layers on 200 mm engineered substrates with a polycrystalline AlN core (QST by QROMIS) for CMOS…”
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Impact of Floating Body Effect, Back-Gate Traps, and Trap-Assisted Tunneling on Scaled In0.53Ga0.47As Ultrathin-Body MOSFETs and Mitigation Measures by Sant, Saurabh, Aguirre, Paulina, Hahn, Herwig, Deshpande, Veeresh, Czornomaz, Lukas, Schenk, Andreas

“…Ultrathin-body (UTB) III-V channel MOSFETs are known to suffer from the floating body effect which turns on a parasitic bipolar junction transistor (BJT) and…”
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Physical Modeling of Charge Trapping Effects in GaN/Si Devices and Incorporation in the ASM-HEMT Model by Pradhan, Mamta, Alomari, Mohammed, Moser, Matthias, Fahle, Dirk, Hahn, Herwig, Heuken, Michael, Burghartz, Joachim N.

“…In this work, the dynamic behavior of gallium nitride on silicon high electron mobility transistors (GaN/Si HEMT) with carbon doped buffer is modeled using a…”
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First Small-Signal Data of GaN-Based p-Channel Heterostructure Field Effect Transistors by Hahn, Herwig, Reuters, Benjamin, Pooth, Alexander, Noculak, Achim, Kalisch, Holger, Vescan, Andrei

“…p-Channel heterostructure field effect transistors (HFETs) have recently attracted increasing interest. They open up the possibility of fabricating…”
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Gallium Phosphide-on-Silicon Dioxide Photonic Devices by Schneider, Katharina, Welter, Pol, Baumgartner, Yannick, Hahn, Herwig, Czornomaz, Lukas, Seidler, Paul

“…The development of integrated photonic circuits utilizing gallium phosphide requires a robust, scalable process for fabrication of GaP-on-insulator devices…”
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p-Channel Enhancement and Depletion Mode GaN-Based HFETs With Quaternary Backbarriers by Hahn, Herwig, Reuters, Benjamin, Pooth, Alexander, Hollander, Bernd, Heuken, Michael, Kalisch, Holger, Vescan, Andrei

“…Within the last years, III-nitride-based devices have been demonstrated with exceptional performance. There is, however, a severe lack of knowledge when it…”
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The III-Nitride Double Heterostructure Revisited: Benefits for Threshold Voltage Engineering of MIS Devices by Hahn, Herwig, Funck, Carsten, Geipel, Sascha, Kalisch, Holger, Vescan, Andrei

“…GaN-based devices are seen as ideal candidates for power-switching applications. For the acceptance of GaN-based devices by module designers, obtaining…”
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Metal‐Organic Chemical Vapor Deposition Regrowth of Highly Doped n+ (In)GaN Source/Drain Layers for Radio Frequency Transistors by Banerjee, Sourish, Peralagu, Uthayasankaran, Alian, Alireza, Zhao, Ming, Hahn, Herwig, Minj, Albert, Vanhove, Benjamin, Vohra, Anurag, Parvais, Bertrand, Langer, Robert, Collaert, Nadine

“…Herein, epitaxially regrown n+ (In)GaN source/drain layers for radio frequency high electron mobility transistors, addressing material and electrical…”
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Optomechanics with one-dimensional gallium phosphide photonic crystal cavities by Schneider, Katharina, Baumgartner, Yannick, Hönl, Simon, Welter, Pol, Hahn, Herwig, Wilson, Dalziel J., Czornomaz, Lukas, Seidler, Paul

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Epitaxial buffer structures grown on 200 mm engineering substrates for 1200 V E-mode HEMT application by Vohra, Anurag, Geens, Karen, Zhao, Ming, Syshchyk, Olga, Hahn, Herwig, Fahle, Dirk, Bakeroot, Benoit, Wellekens, Dirk, Vanhove, Benjamin, Langer, Robert, Decoutere, Stefaan

“…In this work, we demonstrate the epitaxial growth of a gallium-nitride (GaN) buffer structure qualified for 1200 V applications on 200 mm engineered poly-AlN…”
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Monolithically Integrated CMOS-Compatible III-V on Silicon Lasers by Seifried, Marc, Villares, Gustavo, Baumgartner, Yannick, Hahn, Herwig, Halter, Mattia, Horst, Folkert, Caimi, Daniele, Caer, Charles, Sousa, Marilyne, Dangel, Roger Franz, Czornomaz, Lukas, Offrein, Bert Jan

“…CMOS-compatible III-V lasers integrated on silicon are a crucial step to reduce power consumption and cost for next-generation optical transceivers. Here, we…”
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AlN/Si interface engineering to mitigate RF losses in MOCVD-grown GaN-on-Si substrates by Cardinael, Pieter, Yadav, Sachin, Hahn, Herwig, Zhao, Ming, Banerjee, Sourish, Kazemi Esfeh, Babak, Mauder, Christof, O'Sullivan, Barry, Peralagu, Uthayasankaran, Vohra, Anurag, Langer, Robert, Collaert, Nadine, Parvais, Bertrand, Raskin, Jean-Pierre

“…Fabrication of low-RF loss GaN-on-Si high electron mobility transistor stacks is critical to enable competitive front-end-modules for 5G and 6G applications…”
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Threshold Voltage Engineering in GaN-Based HFETs: A Systematic Study With the Threshold Voltage Reaching More Than 2 V by Hahn, Herwig, Benkhelifa, Fouad, Ambacher, Oliver, Brunner, Frank, Noculak, Achim, Kalisch, Holger, Vescan, Andrei

“…One of the key challenges for the adoption of gallium nitride (GaN)-based heterostructure field effect transistors (HFETs) in power-switching applications is…”
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Impact of Floating Body Effect, Back-Gate Traps, and Trap-Assisted Tunneling on Scaled In 0.53 Ga 0.47 As Ultrathin-Body MOSFETs and Mitigation Measures by Sant, Saurabh, Aguirre, Paulina, Hahn, Herwig, Deshpande, Veeresh, Czornomaz, Lukas, Schenk, Andreas

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Integration of 650 V GaN Power ICs on 200 mm Engineered Substrates by Li, Xiangdong, Geens, Karen, Wellekens, Dirk, Zhao, Ming, Magnani, Alessandro, Amirifar, Nooshin, Bakeroot, Benoit, You, Shuzhen, Fahle, Dirk, Hahn, Herwig, Heuken, Michael, Odnoblyudov, Vlad, Aktas, Ozgur, Basceri, Cem, Marcon, Denis, Groeseneken, Guido, Decoutere, Stefaan

“…GaN power ICs on engineered substrates of Qromis substrate technology (QST) are promising for future power applications, thanks to the reduced parasitics,…”
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Vertical GaN devices: Process and reliability by You, Shuzhen, Geens, Karen, Borga, Matteo, Liang, Hu, Hahn, Herwig, Fahle, Dirk, Heuken, Michael, Mukherjee, Kalparupa, De Santi, Carlo, Meneghini, Matteo, Zanoni, Enrico, Berg, Martin, Ramvall, Peter, Kumar, Ashutosh, Björk, Mikael T., Ohlsson, B. Jonas, Decoutere, Stefaan

“…This paper reviews recent progress and key challenges in process and reliability for high-performance vertical GaN transistors and diodes, focusing on the…”
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Influence of mask material and process parameters on etch angle in a chlorine-based GaN dry etch by Hahn, Herwig, Gruis, Jan Berend, Ketteniss, Nico, Urbain, Felix, Kalisch, Holger, Vescan, Andrei

“…The vertical structuring of GaN layers for power application purposes is a key step for successful device operation. Thus, the dry etching of GaN becomes a…”
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p-Channel Enhancement and Depletion Mode GaN-Based HFETs With Quaternary Backbarriers : GaN ELECTRONIC DEVICES by HAHN, Herwig, REUTERS, Benjamin, POOTH, Alexander, HOLLÄNDER, Bernd, HEUKEN, Michael, KALISCH, Holger, VESCAN, Andrei

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GaN-on-Si Enhancement Mode Metal Insulator Semiconductor Heterostructure Field Effect Transistor with On-Current of 1.35 A/mm by Hahn, Herwig, Benkhelifa, Fouad, Ambacher, Oliver, Alam, Assadullah, Heuken, Michael, Yacoub, Hady, Noculak, Achim, Kalisch, Holger, Vescan, Andrei

“…GaN-on-Si transistors are regarded as a candidate for future power-switching applications. Beside the necessity to achieve enhancement mode behavior,…”
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