Search Results - "Hagyoul Bae"

First Demonstration of a Logic-Process Compatible Junctionless Ferroelectric FinFET Synapse for Neuromorphic Applications by Seo, Myungsoo, Kang, Min-Ho, Jeon, Seung-Bae, Bae, Hagyoul, Hur, Jae, Jang, Byung Chul, Yun, Seokjung, Cho, Seongwoo, Kim, Wu-Kang, Kim, Myung-Su, Hwang, Kyu-Man, Hong, Seungbum, Choi, Sung-Yool, Choi, Yang-Kyu

“…A highly scalable synapse device based on a junctionless (JL) ferroelectric (FE) FinFET is presented for neuromorphic applications. The synaptic behaviors of…”
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Direct Observation of a Carbon Filament in Water-Resistant Organic Memory by Lee, Byung-Hyun, Bae, Hagyoul, Seong, Hyejeong, Lee, Dong-Il, Park, Hongkeun, Choi, Young Joo, Im, Sung-Gap, Kim, Sang Ouk, Choi, Yang-Kyu

“…The memory for the Internet of Things (IoT) requires versatile characteristics such as flexibility, wearability, and stability in outdoor environments…”
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Characteristics of metal contact to GaS films and photodetector applications by Kim, Ju Won, Seo, Dong Hyun, Bae, Hagyoul, Park, Joo Hyung, Kim, TaeWan

“…Group-III monochalcogenides, particularly gallium sulfide (GaS), have garnered attention for visible–UV range optoelectronic applications owing to their wide…”
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Simulational investigation of self-aligned bilayer linear grating enabling highly enhanced responsivity of MWIR InAs/GaSb type-II superlattice (T2SL) photodetector by Lee, Minseok, Ku, Zahyun, Jeong, Seungjin, Hwang, Jehwan, Lee, Junghyun, Kim, Junoh, Kang, Sang-Woo, Urbas, Augustine, Bae, Hagyoul, Kim, Bongjoong

“…Linear gratings polarizers provide remarkable potential to customize the polarization properties and tailor device functionality via dimensional tuning of…”
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Investigation of Self-Heating Effects in Gate-All-Around MOSFETs With Vertically Stacked Multiple Silicon Nanowire Channels by Park, Jun-Young, Lee, Byung-Hyun, Chang, Ki Soo, Kim, Dong Uk, Jeong, Chanbae, Kim, Choong-Ki, Bae, Hagyoul, Choi, Yang-Kyu

“…The self-heating effects (SHEs) in gate-all-around (GAA) MOSFETs with vertically stacked silicon nanowire (SiNW) channels are investigated. Direct observations…”
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Foldable and Disposable Memory on Paper by Lee, Byung-Hyun, Lee, Dong-Il, Bae, Hagyoul, Seong, Hyejeong, Jeon, Seung-Bae, Seol, Myung-Lok, Han, Jin-Woo, Meyyappan, M., Im, Sung-Gap, Choi, Yang-Kyu

“…Foldable organic memory on cellulose nanofibril paper with bendable and rollable characteristics is demonstrated by employing initiated chemical vapor…”
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Self-Curable Gate-All-Around MOSFETs Using Electrical Annealing to Repair Degradation Induced From Hot-Carrier Injection by Park, Jun-Young, Moon, Dong-Il, Seol, Myeong-Lok, Kim, Choong-Ki, Jeon, Chang-Hoon, Bae, Hagyoul, Bang, Tewook, Choi, Yang-Kyu

“…Device degradation induced by hot-carrier injection was repaired by electrical annealing using Joule heat through a built-in heater in a gate. The concentrated…”
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Characterization of intrinsic subgap density-of-states in exfoliated MoS2 FETs using a multi-frequency capacitance-conductance technique by Bae, Hagyoul, Kim, Choong-Ki, Choi, Yang-Kyu

“…A multi-frequency capacitance-conductance technique is proposed for characterizing the intrinsic density-of-states (DOS: g int(E)) inside an energy bandgap…”
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Influence of Radiation-Induced Displacement Defect in 1.2 kV SiC Metal-Oxide-Semiconductor Field-Effect Transistors by Lee, Gyeongyeop, Ha, Jonghyeon, Kim, Kihyun, Bae, Hagyoul, Kim, Chong-Eun, Kim, Jungsik

“…The effect of displacement defect on SiC metal-oxide-semiconductor field-effect transistors (MOSFETs) due to radiation is investigated using technology…”
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A Novel Technique for Curing Hot-Carrier-Induced Damage by Utilizing the Forward Current of the PN-Junction in a MOSFET by Lee, Geon-Beom, Kim, Choong-Ki, Park, Jun-Young, Bang, Tewook, Bae, Hagyoul, Kim, Seong-Yeon, Ryu, Seung-Wan, Choi, Yang-Kyu

“…The hot-carrier-induced damage of a gate dielectric was cured with Joule heat generated by the forward current of the p-n junction between the body and drain,…”
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Solar-Blind UV Photodetector Based on Atomic Layer-Deposited Cu2O and Nanomembrane β‑Ga2O3 pn Oxide Heterojunction by Bae, Hagyoul, Charnas, Adam, Sun, Xing, Noh, Jinhyun, Si, Mengwei, Chung, Wonil, Qiu, Gang, Lyu, Xiao, Alghamdi, Sami, Wang, Haiyan, Zemlyanov, Dmitry, Ye, Peide D

“…Herein, we present a solar-blind ultraviolet photodetector realized using atomic layer-deposited p-type cuprous oxide (Cu2O) underneath a mechanically…”
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Unified Subthreshold Coupling Factor Technique for Surface Potential and Subgap Density-of-States in Amorphous Thin Film Transistors by Jun, Sungwoo, Jo, Chunhyung, Bae, Hagyoul, Choi, Hyunjun, Kim, Dae Hwan, Kim, Dong Myong

“…We report a unified subthreshold coupling factor technique for a simultaneous extraction of the surface potential (ψ S ) and the subgap density-of-states [DOS:…”
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Single-Scan Monochromatic Photonic Capacitance-Voltage Technique for Extraction of Subgap DOS Over the Bandgap in Amorphous Semiconductor TFTs by Hagyoul Bae, Hyunjun Choi, Sungwoo Jun, Chunhyung Jo, Yun Hyeok Kim, Jun Seok Hwang, Jaeyeop Ahn, Oh, Saeroonter, Jong-Uk Bae, Sung-Jin Choi, Dae Hwan Kim, Dong Myong Kim

“…We report a novel technique for simultaneous extraction of subgap donor- and acceptor-like density of states [g D (E) and g A (E)] over the subgap energy range…”
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On-State Current Degradation Owing to Displacement Defect by Terrestrial Cosmic Rays in Nanosheet FET by Ha, Jonghyeon, Lee, Gyeongyeop, Bae, Hagyoul, Kim, Kihyun, Han, Jin-Woo, Kim, Jungsik

“…Silicon displacement defects are caused by various effects. For instance, epitaxial crystalline silicon growth and ion implantation often result in defects…”
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An in-depth study of the synthesis of ReSe2 for anisotropic Raman characteristics by Nam, Giho, Park, Sohyeon, Heo, Keun, Bong, Jungwoo, Lee, DongGyu, Kim, Hyunsoo, Ponnusamy, Krishna Moorthy, Bae, Hagyoul, Park, Hyeong Gi, Lee, Jae-Hyun, Jang, Hyeon-Sik

“…Two-dimensional transition metal dichalcogenides (TMDs) have received more interest for their potential role in future electronic and optoelectronic…”
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Local Electro-Thermal Annealing for Repair of Total Ionizing Dose-Induced Damage in Gate-All-Around MOSFETs by Park, Jun-Young, Moon, Dong-Il, Bae, Hagyoul, Roh, Young Tak, Seol, Myeong-Lok, Lee, Byung-Hyun, Jeon, Chang-Hoon, Lee, Hee Chul, Choi, Yang-Kyu

“…A shift in threshold voltage caused by total ionizing dose (TID) is problematic in the MOSFET, especially in aerospace applications. Unlike traditional methods…”
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Investigation of Low-Frequency Noise in Nonvolatile Memory Composed of a Gate- All-Around Junctionless Nanowire FET by Jeong, Ui-Sik, Kim, Choong-Ki, Bae, Hagyoul, Moon, Dong-Il, Bang, Tewook, Choi, Ji-Min, Hur, Jae, Choi, Yang-Kyu

“…Low-frequency noise (LFN) behaviors, characterized with an SONOS-based gate-all-around junctionless nanowire (JLNW), are investigated to determine the…”
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Dual-Sweep Combinational Transconductance Technique for Separate Extraction of Parasitic Resistances in Amorphous Thin-Film Transistors by Sungwoo Jun, Hagyoul Bae, Hyeongjung Kim, Jungmin Lee, Sung-Jin Choi, Dae Hwan Kim, Dong Myong Kim

“…We report a dual-sweep combinational transconductance technique for separate extraction of parasitic source (R S ) and drain (R D ) resistances in thin-film…”
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Bias-Dependent Effective Channel Length for Extraction of Subgap DOS by Capacitance-Voltage Characteristics in Amorphous Semiconductor TFTs by Choi, Hyunjun, Lee, Jungmin, Bae, Hagyoul, Choi, Sung-Jin, Kim, Dae Hwan, Kim, Dong Myong

“…Bias-dependent effective channel length [L eff (VG)] is empirically modeled with a channel conduction factor [α(VG)] for a consistent capacitance-voltage (C-V)…”
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Reply to Comments by Ortiz-Conde et al by Kim, Gun-Hee, Bae, Hagyoul, Hur, Jae, Kim, Choong-Ki, Lee, Geon-Bum, Bang, Tewook, Choi, Yang-Kyu

“…In this response, we show that the paper by Kim et al. by our group has a different research purpose and uses different modeling processes, which was not…”
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