Search Results - "Hafich, M. J."

The preparation of InGa(As)Sb and Al(Ga)AsSb films and diodes on GaSb for thermophotovoltaic applications using metal-organic chemical vapor deposition by Cederberg, J.G., Hafich, M.J., Biefeld, R.M., Palmisiano, M.

“…InGaAsSb thermophotovoltaic cells and Al(Ga)AsSb cell isolation diodes have been successfully grown by MOCVD. Epitaxial growth of antimonide films is quite…”
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Band offset of GaAs/In0.48Ga0.52P measured under hydrostatic pressure by JIANHUI CHEN, SITES, J. R, SPAIN, I. L, HAFICH, M. J, ROBINSON, G. Y

“…Low-temperature photoluminescence spectra of an In0.48Ga0.52P alloy and a p-type GaAs/In0.48Ga0.52P multiple quantum well, both grown by molecular beam…”
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High quality quantum wells of InGaP/GaAs grown by molecular beam epitaxy by HAFICH, M. J, QUIGLEY, J. H, OWENS, R. E, ROBINSON, G. Y, DU LI, OTSUKA, N

“…High quality quantum wells of GaAs confined by barriers of InGaP have been grown by gas-source molecular beam epitaxy. High-resolution lattice images obtained…”
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Internal photoemission and energy-band offsets in GaAs-GaInP p-I-N heterojunction photodiodes by Haase, M. A., Hafich, M. J., Robinson, G. Y.

“…Internal photoemission has been observed in GaAs-Ga0.52In0.48P p-I-N heterojunction photodiodes grown by gas source molecular beam epitaxy. Threshold energies…”
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Growth of InP on Si substrates by molecular beam epitaxy by CRUMBAKER, T. E, LEE, H. Y, HAFICH, M. J, ROBINSON, G. Y

“…The growth of single-crystal InP films on (100) Si substrates by molecular beam epitaxy (MBE) is described. Three different buffer layers were grown by…”
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TEM study of the effect of growth interruption in MBE of InGaP/GaAs superlattices by MAHALINGAM, K, NAKAMURA, Y, OTSUKA, N, LEE, H. Y, HAFICH, M. J, ROBINSON, G. Y

“…Article abstract not available…”
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The influence of dislocation density on electron mobility in InP films on Si by CRUMBAKER, T. E, HAFICH, M. J, ROBINSON, G. Y, JONES, K. M, AL-JASSIM, M. M, DAVIS, A, LORENZO, J. P

“…The average electron mobility and dislocation density have been measured as functions of the film thickness in InP films grown on Si substrates by gas-source…”
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Nonresonant tunneling in InGaP/InAlP asymmetric double quantum wells by BUCCAFUSCA, O, CHILLA, J. L. A, MENONI, C. S, ROCCA, J. J, HAFICH, M. J, WOODS, L. M, ROBINSON, G. Y

“…Nonresonant tunneling rates have been measured in InGaP/InAlP asymmetric double quantum-well structures for which optical phonon assisted tunneling is…”
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High-speed, cascaded optical logic operations using programmable optical logic gate arrays by Bo Lu, Yin-Chen Lu, Cheng, J., Hafich, M.J., Klem, J., Zolper, J.C.

“…Programmable optical logic operations are demonstrated using arrays of nonlatching binary optical switches consisting of vertical-cavity surface-emitting…”
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Optoelectronic exclusive-OR (XOR) gate by Beyette, F.R., Geib, K.M., Feld, S.A., Hafich, M.J., An, X., Robinson, G.Y., Wilmsen, C.W.

“…An optoelectronic circuit that implements the exclusive-OR (XOR) logic function is described. The circuit uses two unmatched heterojunction phototransistors…”
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Two wavelength optically controlled latch and AND gate by AN, X, GEIB, K. M, HAFICH, M. J, CRUMBAKER, T. E, SILVESTRE, P, BEYETTE, F. R, FELD, S. A, ROBINSON, G. Y, WILMSEN, C. W

“…A new optical device which functions either as a gated latch or an AND gate is demonstrated. This device utilizes two different wavelengths of input light and…”
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Electrical and optical feedback in an InGaAs/InP light-amplifying optical switch (LAOS) by Feld, S.A., Beyette, F.R., Hafich, M.J., Lee, H.Y., Robinson, G.Y., Wilmsen, C.W.

“…A circuit model for optical and electrical feedback has been developed to investigate the cause of negative differential resistance (NDR) switching in a series…”
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InGaP/GaAs superlattices grown by gas-source molecular beam epitaxy by LEE, H. Y, CROOK, M. D, HAFICH, M. J, QUIGLEY, J. H, ROBINSON, G. Y, LI, D, OTSUKA, N

“…Lattice-matched InGaP/GaAs superlattices have been grown by gas-source molecular beam epitaxy. High-resolution images obtained with transmission electron…”
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Highly compact integrated optical set-reset memory pixels for parallel processing arrays by An, X., Geib, K.M., Hafich, M.J., Beyette, F.R., Field, S.A., Robinson, G.Y., Wilmsen, C.W.

“…An integrated optoelectronic device with a single-mesa structure, which functions as an optical set-reset memory or an optical inverter, is reported. The…”
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Measurement of Schottky barrier energy on InGaP and InGaAlP films lattice matched to GaAs by NANDA, A, HAFICH, M. J, VOGT, T. J, WOODS, L. M, PATRIZI, G. A, ROBINSON, G. Y

“…The Schottky barrier energies for both n-type and p-type materials have been measured for the wide band-gap alloys InGaP and InGaAlP when lattice matched to…”
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Optically-cascaded, multistage switching operation of a multifunctional binary optical/optoelectronic switch by Bo Lu, Yin-Chen Lu, Alduino, A.C., Ortiz, G.G., Cheng, J., Hafich, M.J., Klem, J., Schneider, R.P., Zolper, J.C.

“…Optically cascadable and multifunctional binary optical switches consisting of AlGaAs-GaAs vertical cavity surface-emitting lasers (VCSELs), heterojunction…”
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Extraction of the minimum specific contact resistivity using Kelvin resistors by Gillenwater, R.L., Hafich, M.J., Robinson, G.Y.

“…A comparison of two types of commonly used Kelvin resistors based on numerical simulation of the specific contact resistivity is presented. The minimum contact…”
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Integrated optical NOR gate by Beyette, F.R., Geib, K.M., Feld, S.A., An, X., Hafich, M.J., Robinson, G.Y., Wilmsen, C.W.

“…A two-input optical NOR gate structure is proposed and demonstrated. The NOR gate is fabricated from a vertically integrated heterojunction phototransistor and…”
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Fabrication and characterization of an In0.53Ga0.47As/InP photon transport transistor by CHU, A. K, GIGASE, Y, LEE, H. Y, HAFICH, M. J, ROBINSON, G, VAN ZEGHBROECK, B

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Monolithic matrix-addressable AlGaAs-GaAs array by Ray, S., Kolbas, R.M., Hafich, M.J., Dies, B.E.

“…Planar monolithic matrix-addressable visible LED arrays were fabricated from the AlGaAs-GaAs material system using proton bombardment for pixel-to-pixel…”
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