Search Results - "Haddara, Y M"

Dependence of InGaP nanowire morphology and structure on molecular beam epitaxy growth conditions by Fakhr, A, Haddara, Y M, Lapierre, R R

“…InGaP nanowires (NWs) were grown by the Au-assisted method in a gas source molecular beam epitaxy system. The dependence of InGaP composition, morphology and…”
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The response of open-volume defects in Si0.92Ge0.08 to annealing in nitrogen or oxygen ambient by Abdulmalik, D. A., Coleman, P. G., Su, H. Z., Haddara, Y. M., Knights, A. P.

“…While the dynamics of thermal oxidation of Si has been adequately described for over three decades, details of SiGe oxidation are not entirely clear. In…”
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A Fully Integrated CMOS Power Amplifier Using Superharmonic Injection-Locking for Short-Range Applications by El-Desouki, M. M., Deen, M. J., Haddara, Y. M., Marinov, O.

“…This work demonstrates the feasibility of using a superharmonic injection-locked oscillator as a power amplifier for short-range, low-power applications. This…”
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The Impact of On-Chip Interconnections on CMOS RF Integrated Circuits by El-Desouki, M.M., Abdelsayed, S.M., Deen, M.J., Nikolova, N.K., Haddara, Y.M.

“…Achieving power- and area-efficient fully integrated transceivers is one of the major challenges faced when designing high-frequency electronic circuits…”
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Electrical characterization of polymer-based FETs fabricated by spin-coating poly(3-alkylthiophene)s by Deen, M.J., Kazemeini, M.H., Haddara, Y.M., Jianfei Yu, Vamvounis, G., Holdcroft, S., Woods, W.

“…The current-voltage (I-V) characteristics of two different polymer thin-film transistors (TFTs), based on spin-coating of poly(3-hexylthiophene)-P3HT and…”
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Modeling vacancy injection from the silicon/silicon-nitride interface by Hasanuzzaman, Mohammad, Haddara, Yaser M.

“…Vacancy injection is known to occur from the silicon/silicon-nitride interface under conditions of thermal nitridation and during anneal in inert or oxidizing…”
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The response of open-volume defects in Si sub(0.92)Ge sub(0.08) to annealing in nitrogen or oxygen ambient by Abdulmalik, DA, Coleman, P G, Su, H Z, Haddara, Y M, Knights, AP

“…While the dynamics of thermal oxidation of Si has been adequately described for over three decades, details of SiGe oxidation are not entirely clear. In…”
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The response of open-volume defects in Si0.92Ge0.08to annealing in nitrogen or oxygen ambient by ABDULMALIK, D. A, COLEMAN, P. G, SU, H. Z, HADDARA, Y. M, KNIGHTS, A. P

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TRANSIENT DIFFUSION OF BERYLLIUM AND SILICON IN GALLIUM ARSENIDE by Haddara, Yaser M, Bravman, John C

“…Transient diffusion is an increasingly important phenomenon as thermal budgets for real processes decrease and diffusion during sample growth becomes more…”
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Accurate measurements of the intrinsic diffusivities of boron and phosphorus in silicon by Haddara, Yaser M., Folmer, Brennan T., Law, Mark E., Buyuklimanli, Temel

“…All activity in modeling transient diffusion behavior relies on knowledge of the inert intrinsic diffusivities of dopants in Si. The measurements upon which…”
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Impact of growth conditions on vacancy-type defects in silicon-germanium structures grown by molecular-beam epitaxy by Shoukri, Kareem M., Haddara, Yaser M., Knights, A. P., Coleman, P. G.

“…Silicon-germanium layers of either 200 nm or 250 nm have been grown via molecular-beam epitaxy (MBE) on p -type (001) silicon substrates. Each sample was…”
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Effect of encapsulant material on the diffusion of beryllium in molecular beam epitaxy gallium arsenide by Haddara, Yaser M., Deal, Michael D., Bravman, John C.

“…Experiments were done that illustrate the role of the wafer surface in the transient diffusion of Be in GaAs. Samples were doped during molecular beam…”
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