Search Results - "Haddad, G.I."

Recent advances in the performance of InP Gunn devices and GaAs TUNNETT diodes for the 100-300-GHz frequency range and above by Eisele, H., Rydberg, A., Haddad, G.I.

“…Improved heat dissipation in InP Gunn devices resulted in RF power levels exceeding 200, 130, 80, and 25 mW at oscillation frequencies of around 103, 132, 152,…”
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Microwave solid-state active devices by Haddad, G.I., Trew, R.J.

“…Solid-state devices have had a major impact on the development of microwave and millimeter-wave systems. Starting with development work dating back to the…”
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Design, modeling, and characterization of monolithically integrated InP-based (1.55 /spl mu/m) high-speed (24 Gb/s) p-i-n/HBT front-end photoreceivers by Kyounghoon Yang, Gutierrez-Aitken, A.L., Xiangkun Zhang, Haddad, G.I., Bhattacharya, P.

“…High-speed, long-wavelength InAlAs/InGaAs OEIC photoreceivers based on a p-i-n/HBT shared layer integration scheme have been designed, fabricated and…”
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Power performance of InP-based single and double heterojunction bipolar transistors by Sawdai, D., Yang, K., Hsu, S.S.-H., Pavlidis, D., Haddad, G.I.

“…The microwave and power performance of fabricated InP-based single and double heterojunction bipolar transistors (HBTs) is presented. The single heterojunction…”
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16-GHz bandwidth InAlAs-InGaAs monolithically integrated p-i-n/HBT photoreceiver by Gutierrez-Aitken, A.L., Yang, K., Zhang, X., Haddad, G.I., Bhattacharya, P., Lunardi, L.M.

“…A monolithically integrated p-i-n transimpedance-amplifier photoreceiver based on an InAlAs-InGaAs HBT structure lattice-matched to InP has been designed,…”
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Digital circuit applications of resonant tunneling devices by Mazumder, P., Kulkarni, S., Bhattacharya, M., Jian Ping Sun, Haddad, G.I.

“…Many semiconductor quantum devices utilize a novel tunneling transport mechanism that allows picosecond device switching speeds. The negative differential…”
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Characterization of resonant tunneling diodes for microwave and millimeter-wave detection by Mehdi, I., East, J.R., Haddad, G.I.

“…The authors report on the direct detection capabilities of resonant tunneling diodes in the 10-100 GHz range. An open circuit voltage sensitivity of 1750 mV/mW…”
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Resonant tunneling diodes: models and properties by Jian Ping Sun, Haddad, G.I., Mazumder, P., Schulman, J.N.

“…The resonant tunneling diode (RTD) has been widely studied because of its importance in the field of nanoelectronic science and technology and its potential…”
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Two-terminal millimeter-wave sources by Eisele, H., Haddad, G.I.

“…Basic principles of operation, fundamental power-generation capabilities, and fabrication technologies are reviewed for three groups of two-terminal devices,…”
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Characteristics of Coupled Microstrip Transmission Lines-I: Coupled-Mode Formulation of Inhomogeneous Lines by Krage, M.K., Haddad, G.I.

“…This paper consists of two parts. In Part I, coupled-mode theory is employed to determine the effects of reflection at the various ports and unequal inductive…”
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High-efficiency class-A power amplifiers with a dual-bias-control scheme by Kyounghoon Yang, Haddad, G.I., East, J.R.

“…A new scheme for power amplifiers is proposed, which can provide both high efficiency and linearity. The proposed amplifier operates in a virtual class-A mode…”
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Effect of Harmonic and Subharmonic Signals on Avalanche-Diode Oscillator Performance (Correspondence) by Schroeder, W.E., Haddad, G.I.

“…The purpose of this correspondence is to show the effects of harmonic and subharmonic signals on the operation of an avalanche-diode oscillator. Generation of…”
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High fmax InP double heterojunction bipolar transistors with chirped InGaAs/InP superlattice base-collector junction grown by CBE by Yang, K., Munns, G.O., Haddad, G.I.

“…We report the performance of InP Double Heterojunction Bipolar Transistors (DHBT's) with a chirped InGaAs/InP superlattice B-C junction grown by CBE. The B-C…”
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High f/sub max/ InP double heterojunction bipolar transistors with chirped InGaAs/InP superlattice base-collector junction grown by CBE by Yang, K., Munns, G.O., Haddad, G.I.

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The Characteristic Impedance and Coupling Coefficient of Coupled Rectangular Strips in a Waveguide by Krage, M.K., Haddad, G.I.

“…The effect of both the ground planes and sidewalls on the characteristic impedance and coupling coefficient of two coupled strip-Iines are investigated…”
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Use of self bias to improve power saturation and intermodulation distortion in CW class B HBT operation by Teeter, D.A., East, J.R., Haddad, G.I.

“…It is shown that a DC base bias circuit can be used to control the RF performance of a heterojunction bipolar transistor (HBT) operating under CW conditions…”
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Compact multiple-valued multiplexers using negative differential resistance devices by Chan, H.L., Mohan, S., Mazumder, P., Haddad, G.I.

“…Quantum electronic devices with negative differential resistance (NDR) characteristics have been used to design compact multiplexers. These multiplexers may be…”
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Tunneling devices and applications in high functionality/speed digital circuits by Haddad, G.I., Mazumder, P.

“…Tunneling phenomena can be used to realize devices with unique I-V characteristics (negative differential resistance) which can be employed to design various…”
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Theory of unipolar ballistic and quasiballistic transit-time oscillators for a terahertz range by Gribnikov, Z.S, Vagidov, N.Z, Mitin, V.V, Haddad, G.I

“…We are the first to consider DC characteristics and a linear admittance of a very short undoped transit space (T-space) in the case of a ballistic transport of…”
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Electron dispersion relations with negative effective masses in quantum wells grown on the cleaved edge of a superlattice by Gribnikov, Z.S., Bashirov, R.R., Eisele, H., Mitin, V.V., Haddad, G.I.

“…Engineered energy-wave-vector dispersion relations of either electrons or holes hold great promise for realizing fundamental oscillators at terahertz…”
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