Search Results - "Habersat, D."

Time Dependence of Bias-Stress-Induced SiC MOSFET Threshold-Voltage Instability Measurements by Lelis, A.J., Habersat, D., Green, R., Ogunniyi, A., Gurfinkel, M., Suehle, J., Goldsman, N.

“…We have observed significant instability in the threshold voltage of 4H-SiC metal-oxide-semiconductor field-effect transistors due to gate-bias stressing. This…”
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Dynamic On-State Resistance in SiC MOSFETs by Green, R., Lelis, A., Urciuoli, D., Schroen, E., Habersat, D.

“…This work describes the dynamic nature of on-resistance in SiC MOSFETs, and explains how this happens whenever large threshold-voltage instabilities occur on…”
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Relationship between 4H-SiC∕SiO2 transition layer thickness and mobility by Biggerstaff, T. L., Reynolds, C. L., Zheleva, T., Lelis, A., Habersat, D., Haney, S., Ryu, S.-H., Agarwal, A., Duscher, G.

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Effect of Threshold-Voltage Instability on SiC DMOSFET Reliability by Lelis, A.J., Green, R., Habersat, D., Goldsman, N.

“…The instability of the threshold voltage in SiC power DMOSFETs due to gate-bias stress and ON-state stress is a potential reliability issue, although the…”
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Advances in Pulsed-Laser-Deposited AlN Thin Films for High-Temperature Capping, Device Passivation, and Piezoelectric-Based RF MEMS/NEMS Resonator Applications by Hullavarad, S S, Vispute, R D, Nagaraj, B, Kulkarni, V N

“…In this paper we report recent advances in pulsed-laser-deposited AlN thin films for high-temperature capping of SiC, passivation of SiC-based devices, and…”
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Advances in pulsed-laser-deposited AIN thin films for high-temperature capping, device passivation, and piezoelectric-based RF MEMS/NEMS resonator applications by Hullavarad, S. S., Vispute, R. D., Nagaraj, B., Kulkarni, V. N., Dhar, S., Venkatesan, T., Jones, K. A., Derenge, M., Zheleva, T., Ervin, M. H., Lelis, A., Scozzie, C. J., Habersat, D., Wickenden, A. E., Currano, L. J., Dubey, M.

“…In this paper we report recent advances in pulsed-laser-deposited AIN thin films for high-temperature capping of SiC, passivation of SiC-based devices, and…”
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A Physical Model of High Temperature 4H-SiC MOSFETs by Potbhare, Siddharth, Goldsman, Neil, Lelis, Aivars, McGarrity, James M., McLean, F. Barry, Habersat, Daniel

“…A comprehensive physical model for the analysis, characterization, and design of 4H-silicon carbide (SiC) MOSFETs has been developed. The model has been…”
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Application of reliability test standards to SiC Power MOSFETs by Green, R, Lelis, A, Habersat, D

“…The application of existing reliability test standards, based on Si technology, to SiC power MOSFET reliability qualification can in some cases result in…”
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Relationship between 4 H - Si C ∕ Si O 2 transition layer thickness and mobility by Biggerstaff, T. L., Reynolds, C. L., Zheleva, T., Lelis, A., Habersat, D., Haney, S., Ryu, S.-H., Agarwal, A., Duscher, G.

“…The interfacial region between silicon carbide (SiC) and its native oxide contains a high density of interfacial traps, which is considered a major problem…”
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Characterization of Transient Gate Oxide Trapping in SiC MOSFETs Using Fast [Formula Omitted]-[Formula Omitted] Techniques by Gurfinkel, M, Xiong, H D, Cheung, K P, Suehle, J S, Bernstein, J B, Shapira, Y, Lelis, A J, Habersat, D, Goldsman, N

“…Threshold voltage and drain current instabilities in state-of-the-art 4H-SiC MOSFETs with thermal as- grown SiO(2) and NO-annealed gate oxides have been…”
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Effect of Threshold-Voltage Instability on SiC DMOSFET Reliability by Lelis, Aivars, Habersat, D., Green, R., Goldsman, N.

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Ultra-Fast Characterization of Transient Gate Oxide Trapping in SiC Mosfets by Gurfinkel, M., Suehle, J., Bernstein, J.B., Shapira, Y., Lelis, A.J., Habersat, D., Goldsman, N.

“…One of the most important issues that limits the performance and reliability of SiC power MOSFETs is the threshold voltage and drain current instability under…”
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Advances in pulsed-laser-deposited AlN thin films for high-temperature capping, device passivation, and piezoelectric-based RF MEMS/NEMS resonator applications: Group III Nitrides, SiC, and ZnO by HULLAVARAD, S. S, VISPUTE, R. D, LELIS, A, SCOZZIE, C. J, HABERSAT, D, WICKENDEN, A. E, CURRANO, L. J, DUBEY, M, NAGARAJ, B, KULKARNI, V. N, DHAR, S, VENKATESAN, T, JONES, K. A, DERENGE, M, ZHELEVA, T, ERVIN, M. H

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Modeling and Characterization of Bias Stress-Induced Instability of SiC MOSFETs by Lelis, A.J., Potbhare, S., Habersat, D., Pennington, G., Goldsman, N.

“…Threshold voltage instability due to bias stressing has been observed in SiC MOSFETs. Stressing at high gate bias has caused shifts up to several hundred…”
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AlN thin films deposited by pulsed laser ablation, sputtering and filtered arc techniques by Bathe, Ravi, Vispute, R.D, Habersat, Dan, Sharma, R.P, Venkatesan, T, Scozzie, C.J, Ervin, Matt, Geil, B.R, Lelis, A.J, Dikshit, S.J, Bhattacharya, R

“…The present work describes the growth and characterization of AlN thin films deposited by pulsed laser deposition (PLD), DC magnetron sputtering and filtered…”
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Ultra-Fast Measurements of VTH Instability in SiC MOSFETs due to Positive and Negative Constant Bias Stress by Gurfinkel, M., Suehle, J., Bernstein, J.B., Shapira, Y., Lelis, A.J., Habersat, D., Goldsman, N.

“…One of the most important issues that limits the performance and reliability of SiC power MOSFETs is the threshold voltage instability under normal operation…”
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Characterization of interface and bulk oxide traps in SiC MOSFETs with epitaxialy grown and implanted channels by Gurfinkel, M., Jinwoo Kim, Potbhare, S., Xiong, H.D., Cheung, K.P., Suehle, J., Bernstein, J.B., Shapira, Y., Lelis, A.J., Habersat, D., Goldsman, N.

“…The results show that devices with "as grown" SiO 2 have a much higher density of bulk oxide traps than devices after post oxidation annealing in NO…”
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Investigation of a high temperature oxide-trap activation model for SiC power MOSFETs by Green, R., Lelis, A., Habersat, D., El, M.

“…The U.S. Army Research Laboratory is investigating performance and reliability issues associated with the development of n-channel 4H-SiC DMOSFET devices for…”
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SiC MOSFET oxide-trap two-way tunneling model by Lelis, A., Habersat, D., Green, R., Goldsman, N.

“…This work reports the development of a simultaneous two-way tunneling model, based on an existing one-way tunneling model, to simulate the time-dependent and…”
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Using triangular voltage sweep to detect mobile ions in silicon carbide MOS by Habersat, D. B., Lelis, A., Green, R.

“…Since power devices such as DMOSFETs will operate at high temperature where mobile ion effects are enhanced, identifying their presence is a key reliability…”
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