Search Results - "Habchi, M. M."

Influence of the Substrate Material on the Structure and Morphological Properties of Bi Films by Zouaghi, S., Fitouri, H., Habchi, M. M., Ashaya, E. Abdullah, Rebey, A.

“…Thin Bi films were simultaneously deposited by ultrahigh vacuum evaporation technique on three different substrates: GaAs, sapphire, and quartz. The effect of…”
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Type 1 diabetes is not associated with an increased prevalence of hepatic steatosis by Petit, J.-M., Pedro, L., Guiu, B., Duvillard, L., Bouillet, B., Jooste, V., Habchi, M., Crevisy, E., Fourmont, C., Buffier, P., Hillon, P., Cercueil, J.-P., Verges, B.

“…Aim Non‐alcoholic fatty liver disease (NAFLD) is commonly associated with Type 2 diabetes. Recently, it has been suggested that NAFLD is also frequently…”
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Electronic band structure calculation of GaNAsBi alloys and effective mass study by Habchi, M.M., Ben Nasr, A., Rebey, A., El Jani, B.

“…•GaNAsBi band structures have been calculated using BAC model and k⋅p method.•Band-gap energy of GaNAsBi lattice matched to GaAs decreases by…”
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Optical and morphological study of misoriented GaAs substrates exposed to bismuth flow using in situ spectral reflectance and atomic force microscopy by Massoudi, I., Habchi, M.M., Rebey, A., El Jani, B.

“…(100) GaAs substrates with different misorientations were exposed to trimethyl-bismuth (TMBi) flow. The wafers were examined after exposure times of 9 and 43…”
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Stark effect in GaNAsBi/GaAs quantum wells operating at 1.55μm by Bilel, C., Habchi, M.M., Rebey, A., El Jani, B.

“…The effect of an applied stationary electric field on the band structure of GaNAsBi/GaAs quantum wells has been investigated using self-consistent calculation…”
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Analysis of the VIS–NIR spectral reflectance of Bi/GaAs structures grown by MOVPE and UHVE by Habchi, M.M., Massoudi, I., Rebey, A., Ben Chaâbane, R., El Jani, B.

“…Bismuth films have been deposited onto (001) GaAs substrates by metal organic vapor phase epitaxy and ultra-high vacuum evaporation. The optical and…”
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Diamond micro-cantilevers as transducers for olfactory receptors - based biosensors: Application to the receptors M71 and OR7D4 by Manai, R., Habchi, M., Kamouni-Belghiti, D., Persuy, M.A., Rousseau, L., Possas Abreu, M., Grebert, D., Badonnel, K., Bergonzo, P., Pajot-Augy, E., Sanz, G., Scorsone, E.

“…•Immobilization of two olfactory receptors (M71 and OR7D4) onto diamond transducers is proposed.•Two different grafting procedures are monitored by EIS on BDD…”
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Self-consistent analysis of the band structure of doped lattice-matched GaNAsBi-based QWs operating at 1.55μm by Habchi, M.M., Bilel, C., Ben Nasr, A., Rebey, A., El Jani, B.

“…Band structures of n–i doped lattice-matched GaNAsBi/GaAs quantum wells are studied theoretically using a self-consistent calculation (based on the envelop…”
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Structural modelling of the LiCl aqueous solution by the hybrid reverse Monte Carlo (HRMC) simulation by Habchi, M., Mesli, S. M., Kotbi, M., Xu, H.

“…The reverse Monte Carlo (RMC) simulation is applied in the study of an aqueous electrolyte LiCl6H 2 O. On the basis of the available experimental neutron…”
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Investigation of the doping and Stark effects on the band structure and optical absorption of 1.55 μm GaNAsBi/GaAs MQWs by Bilel, C., Habchi, M.M., Ben Nasr, A., Guizani, I., Rebey, A., El Jani, B.

“…We present a self-consistent calculation combined with the 16-band anticrossing model in order to investigate the electronic and optical properties of n-doped…”
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In Situ Spectral Reflectance Investigation of InAs/GaAs Heterostructures Grown by MOVPE by Massoudi, I., Habchi, M.M., Rebey, A., El Jani, B.

“…Metalorganic vapor-phase epitaxy of InAs/GaAs heterostructures was monitored in situ by spectral reflectance in the wavelength range from 600 nm to 1000 nm…”
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Increased erythrocytes n-3 and n-6 polyunsaturated fatty acids is significantly associated with a lower prevalence of steatosis in patients with type 2 diabetes by Petit, J.M, Guiu, B, Duvillard, L, Jooste, V, Brindisi, M.C, Athias, A, Bouillet, B, Habchi, M, Cottet, V, Gambert, P, Hillon, P, Cercueil, J.P, Verges, B

“…Summary Background & aims Non-alcoholic fatty liver disease (NAFLD) is commonly associated with obesity, metabolic syndrome and type 2 diabetes. Although…”
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Study of surface roughness using spectral reflectance measurements recorded during the MOVPE of InAs/GaAs heterostructures by Massoudi, I., Habchi, M.M., Rebey, A., El Jani, B.

“…InAs layers were elaborated on semi-insulating GaAs (100) substrates in a horizontal atmospheric pressure MOVPE reactor at a temperature of 450°C. The growth…”
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Structural and optical properties of InxGa1−xAs strained layers grown on GaAs substrates by MOVPE by Habchi, M.M., Tounsi, N., Bedoui, M., Zaied, I., Rebey, A., El Jani, B.

“…InxGa1−xAs/GaAs pseudomorphic structures were grown by metalorganic vapor phase epitaxy. Reciprocal space mapping were recorded in the vicinity of (004) and…”
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Temperature effect study on structural and morphological properties of In.08Ga.92As/GaAs structures grown by MOVPE by HABCHI, M. M, REBEY, A, EL JANI, B

“…In.08Ga.92As layers were grown on the GaAs(0 0 1) substrate by atmospheric pressure metalorganic vapour-phase epitaxy (AP-MOVPE). Among growth conditions, only…”
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Effect of thickness on structural and electrical properties of GaN films grown on SiN-treated sapphire by Bchetnia, A., Touré, A., Lafford, T.A., Benzarti, Z., Halidou, I., Habchi, M.M., El Jani, B.

“…GaN films were grown by metalorganic chemical vapor deposition (MOCVD) on silicon nitride (SiN)-treated c-plane sapphire substrate. Using in situ laser…”
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Diagnostic of electricity consumption, its cost and greenhouse gas emission in the wastewater treatment sector of Algeria by Igoud, S., Souahi, F., Chitour, C.E., Adjrad, A., Habchi, M., Chouikh, A.

“…Wastewater treatment sector, in Algeria, uses exclusively two processes: the activated sludge applied in the north and the lagooning in the highlands and the…”
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Study of the validity of a combined potential model using the Hybrid Reverse Monte Carlo method in Fluoride glass system by M. Kotbi, M. Habchi, S.M. Mesli, H. Xu

“…The choice of appropriate interaction models is among the major disadvantages of conventional methods such as Molecular Dynamics (MD) and Monte Carlo (MC)…”
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In situ reflectance monitoring of the growth and etching of AlAs/GaAs structures in MOVPE by Rebey, A, Habchi, M.M, Bchetnia, A, El Jani, B

“…We report the in situ optical monitoring of AlAs/GaAs structure elaborated and etched by CCl 4 in metalorganic vapour phase epitaxy reactor. We describe the…”
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Laser reflectometry in situ monitoring of InGaAs grown by atmospheric pressure metalorganic vapour phase epitaxy by Habchi, M.M., Rebey, A., Fouzri, A., El Jani, B.

“…InGaAs layers on undoped GaAs (0 0 1) substrates were grown by atmospheric pressure metalorganic vapour phase epitaxy (AP-MOVPE). In order to obtain films with…”
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