Search Results - "Ha Sul Kim"
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1
Benchmarking the performance of ultrathin body InAs-on-insulator transistors as a function of body thickness
Published in Applied physics letters (05-09-2011)“…The effect of body thickness (5-13 nm) on the leakage currents of top-gated, InAs-on-insulator field-effect-transistors with a channel length of ∼200 nm is…”
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2
Passivation Study of InAs/GaSb Type-II Strained Layer Superlattice in Mid-wave Infrared Photodetector
Published in Journal of the Korean Physical Society (01-11-2020)“…This paper reports the results of a passivation study of InAs/GaSb type-II strained layer superlattice for a mid-wave infrared detector with p-on-n polarity…”
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3
Dark current analysis of an InAs/GaSb type II superlattice infrared photodiode with SiO2 passivation
Published in Journal of the Korean Physical Society (01-06-2021)“…In this study, we present the current–voltage (I–V) characteristics of a 10 ML InAs/10 ML GaSb type-II superlattice (T2SL) with p-i-n structures for…”
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4
Optical and Electrical Study of InAs/GaSb Type II Strained Layer Superlattice for Mid-wave Infrared Detector
Published in Journal of the Korean Physical Society (01-02-2019)“…This paper reports the results of modeling of optical and electrical characteristics of InAs/GaSb type II strained layer superlattice (SLS) for the mid-wave…”
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5
White Light Emission from a Highly Flexible ZnS Composite Mixed with Polymer Composites Under the AC Electric Field
Published in Journal of the Korean Physical Society (01-02-2018)“…We fabricated a flexible white light emitting device by mixing a fabricated zinc sulphide (ZnS) composite (ZnS: Al, Cu, Mn) and polydimethylsiloxane (PDMS)…”
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6
Ultrathin compound semiconductor on insulator layers for high-performance nanoscale transistors
Published in Nature (London) (11-11-2010)“…Over the past several years, the inherent scaling limitations of silicon (Si) electron devices have fuelled the exploration of alternative semiconductors, with…”
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7
Ultrathin body InAs tunneling field-effect transistors on Si substrates
Published in Applied physics letters (14-03-2011)“…An ultrathin body InAs tunneling field-effect transistor on Si substrate is demonstrated by using an epitaxial layer transfer technique. A postgrowth, zinc…”
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8
MOCVD of Hierarchical C‐MoS2 Nanobranches for ppt‐Level NO2 Detection
Published in Small structures (01-08-2023)“…In the past decades, toxic gas emissions have increased significantly owing to the rapid growth of industry and road transportation. Therefore, monitoring…”
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9
Effect of Measurement System Configuration and Operating Conditions on 2D Material-Based Gas Sensor Sensitivity
Published in Nanomaterials (Basel, Switzerland) (31-01-2023)“…Gas sensors applied in real-time detection of toxic gas leakage, air pollution, and respiration patterns require a reliable test platform to evaluate their…”
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10
Direct growth of nano-crystalline graphite films using pulsed laser deposition with in-situ monitoring based on reflection high-energy electron diffraction technique
Published in Applied physics letters (21-03-2016)“…We report an experimental method to overcome the long processing time required for fabricating graphite films by a transfer process from a catalytic layer to a…”
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11
Barrier Engineered Infrared Photodetectors Based on Type-II InAs/GaSb Strained Layer Superlattices
Published in IEEE journal of quantum electronics (01-02-2013)“…We present the design, growth, fabrication, and characterization of unipolar barrier photodiodes, pBiBn, based on type-II InAs/GaSb superlattice for midwave…”
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12
Ultrathin-Body High-Mobility InAsSb-on-Insulator Field-Effect Transistors
Published in IEEE electron device letters (01-04-2012)“…Ultrathin-body InAsSb-on-insulator n-type field-effect transistors (FETs) with ultrahigh electron mobilities are reported. The devices are obtained by the…”
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13
Strain engineering of epitaxially transferred, ultrathin layers of III-V semiconductor on insulator
Published in Applied physics letters (03-01-2011)“…Strain state of ultrathin InAs-on-insulator layers obtained from an epitaxial transfer process is studied. The as-grown InAs epilayer (10-20 nm thick) on the…”
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14
Nanoscale InGaSb Heterostructure Membranes on Si Substrates for High Hole Mobility Transistors
Published in Nano letters (11-04-2012)“…As of yet, III–V p-type field-effect transistors (p-FETs) on Si have not been reported, due partly to materials and processing challenges, presenting an…”
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15
InAs/GaSb strained layer superlattice detectors with nBn design
Published in Infrared physics & technology (01-11-2009)“…We have investigated the electrical and optical properties of an nBn based Type-II InAs/GaSb strained layer superlattice detector as a function of absorber…”
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Journal Article Conference Proceeding -
16
Quantum Confinement Effects in Nanoscale-Thickness InAs Membranes
Published in Nano letters (09-11-2011)“…Nanoscale size effects drastically alter the fundamental properties of semiconductors. Here, we investigate the dominant role of quantum confinement in the…”
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17
MOCVD of Hierarchical C‐MoS 2 Nanobranches for ppt‐Level NO 2 Detection
Published in Small structures (01-08-2023)“…In the past decades, toxic gas emissions have increased significantly owing to the rapid growth of industry and road transportation. Therefore, monitoring…”
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Journal Article -
18
Cardiovascular disease risk of bus drivers in a city of Korea
Published in Annals of occupational and environmental medicine (11-11-2013)“…To prevent the occurrence of CV events such as MI and stroke among professional drivers in Korea, bus drivers were compared to other occupations through the…”
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Journal Article -
19
The effect of absorber doping on electrical and optical properties of nBn based type-II InAs/GaSb strained layer superlattice infrared detectors
Published in Applied physics letters (24-09-2009)“…We have investigated the electrical and optical properties of a nBn based InAs/GaSb strained layer superlattice detector as a function of absorber region…”
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Journal Article -
20
Dark current improvement of the type-II InAs / GaSb superlattice photodetectors by using a gate bias control
Published in Journal of the Korean Physical Society (01-02-2015)“…The dark current of a type-II InAs/GaSb strained layer superlattice photodiode with an n-i-p structure is reduced by using an active gate bias technique. To…”
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