Search Results - "Ha Sul Kim"

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  1. 1

    Benchmarking the performance of ultrathin body InAs-on-insulator transistors as a function of body thickness by Takei, Kuniharu, Chuang, Steven, Fang, Hui, Kapadia, Rehan, Liu, Chin-Hung, Nah, Junghyo, Sul Kim, Ha, Plis, E., Krishna, Sanjay, Chueh, Yu-Lun, Javey, Ali

    Published in Applied physics letters (05-09-2011)
    “…The effect of body thickness (5-13 nm) on the leakage currents of top-gated, InAs-on-insulator field-effect-transistors with a channel length of ∼200 nm is…”
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    Journal Article
  2. 2

    Passivation Study of InAs/GaSb Type-II Strained Layer Superlattice in Mid-wave Infrared Photodetector by Kim, Ha Sul

    Published in Journal of the Korean Physical Society (01-11-2020)
    “…This paper reports the results of a passivation study of InAs/GaSb type-II strained layer superlattice for a mid-wave infrared detector with p-on-n polarity…”
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    Journal Article
  3. 3

    Dark current analysis of an InAs/GaSb type II superlattice infrared photodiode with SiO2 passivation by Kim, Ha Sul

    Published in Journal of the Korean Physical Society (01-06-2021)
    “…In this study, we present the current–voltage (I–V) characteristics of a 10 ML InAs/10 ML GaSb type-II superlattice (T2SL) with p-i-n structures for…”
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    Journal Article
  4. 4

    Optical and Electrical Study of InAs/GaSb Type II Strained Layer Superlattice for Mid-wave Infrared Detector by Kim, Ha Sul

    Published in Journal of the Korean Physical Society (01-02-2019)
    “…This paper reports the results of modeling of optical and electrical characteristics of InAs/GaSb type II strained layer superlattice (SLS) for the mid-wave…”
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    Journal Article
  5. 5

    White Light Emission from a Highly Flexible ZnS Composite Mixed with Polymer Composites Under the AC Electric Field by Kim, Ha Sul

    Published in Journal of the Korean Physical Society (01-02-2018)
    “…We fabricated a flexible white light emitting device by mixing a fabricated zinc sulphide (ZnS) composite (ZnS: Al, Cu, Mn) and polydimethylsiloxane (PDMS)…”
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    Journal Article
  6. 6

    Ultrathin compound semiconductor on insulator layers for high-performance nanoscale transistors by Javey, Ali, Ko, Hyunhyub, Takei, Kuniharu, Kapadia, Rehan, Chuang, Steven, Fang, Hui, Leu, Paul W, Ganapathi, Kartik, Plis, Elena, Kim, Ha Sul, Chen, Szu-Ying, Madsen, Morten, Ford, Alexandra C, Chueh, Yu-Lun, Krishna, Sanjay, Salahuddin, Sayeef

    Published in Nature (London) (11-11-2010)
    “…Over the past several years, the inherent scaling limitations of silicon (Si) electron devices have fuelled the exploration of alternative semiconductors, with…”
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    Journal Article
  7. 7

    Ultrathin body InAs tunneling field-effect transistors on Si substrates by Ford, Alexandra C., Yeung, Chun Wing, Chuang, Steven, Kim, Ha Sul, Plis, Elena, Krishna, Sanjay, Hu, Chenming, Javey, Ali

    Published in Applied physics letters (14-03-2011)
    “…An ultrathin body InAs tunneling field-effect transistor on Si substrate is demonstrated by using an epitaxial layer transfer technique. A postgrowth, zinc…”
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    Journal Article
  8. 8

    MOCVD of Hierarchical C‐MoS2 Nanobranches for ppt‐Level NO2 Detection by Song, Jeongin, Baek, Jinwook, Cho, Jinill, Kim, Taesung, Kim, Muyoung, Kim, Ha Sul, Mun, Jihun, Kang, Sang-Woo

    Published in Small structures (01-08-2023)
    “…In the past decades, toxic gas emissions have increased significantly owing to the rapid growth of industry and road transportation. Therefore, monitoring…”
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    Journal Article
  9. 9

    Effect of Measurement System Configuration and Operating Conditions on 2D Material-Based Gas Sensor Sensitivity by Ryu, Jongwon, Shim, Seob, Song, Jeongin, Park, Jaeseo, Kim, Ha Sul, Lee, Seoung-Ki, Shin, Jae Cheol, Mun, Jihun, Kang, Sang-Woo

    Published in Nanomaterials (Basel, Switzerland) (31-01-2023)
    “…Gas sensors applied in real-time detection of toxic gas leakage, air pollution, and respiration patterns require a reliable test platform to evaluate their…”
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    Journal Article
  10. 10

    Direct growth of nano-crystalline graphite films using pulsed laser deposition with in-situ monitoring based on reflection high-energy electron diffraction technique by Kwak, Jeong Hun, Lee, Sung Su, Lee, Hyeon Jun, Anoop, Gopinathan, Lee, Hye Jeong, Kim, Wan Sik, Ryu, Sang-Wan, Kim, Ha Sul, Jo, Ji Young

    Published in Applied physics letters (21-03-2016)
    “…We report an experimental method to overcome the long processing time required for fabricating graphite films by a transfer process from a catalytic layer to a…”
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    Journal Article
  11. 11

    Barrier Engineered Infrared Photodetectors Based on Type-II InAs/GaSb Strained Layer Superlattices by Gautam, N., Myers, S., Barve, A. V., Klein, B., Smith, E. P., Rhiger, D. R., Ha Sul Kim, Zhao-Bing Tian, Krishna, S.

    Published in IEEE journal of quantum electronics (01-02-2013)
    “…We present the design, growth, fabrication, and characterization of unipolar barrier photodiodes, pBiBn, based on type-II InAs/GaSb superlattice for midwave…”
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    Journal Article
  12. 12

    Ultrathin-Body High-Mobility InAsSb-on-Insulator Field-Effect Transistors by Hui Fang, Chuang, S., Takei, K., Ha Sul Kim, Plis, E., Chin-Hung Liu, Krishna, S., Yu-Lun Chueh, Javey, A.

    Published in IEEE electron device letters (01-04-2012)
    “…Ultrathin-body InAsSb-on-insulator n-type field-effect transistors (FETs) with ultrahigh electron mobilities are reported. The devices are obtained by the…”
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    Journal Article
  13. 13

    Strain engineering of epitaxially transferred, ultrathin layers of III-V semiconductor on insulator by Fang, Hui, Madsen, Morten, Carraro, Carlo, Takei, Kuniharu, Kim, Ha Sul, Plis, Elena, Chen, Szu-Ying, Krishna, Sanjay, Chueh, Yu-Lun, Maboudian, Roya, Javey, Ali

    Published in Applied physics letters (03-01-2011)
    “…Strain state of ultrathin InAs-on-insulator layers obtained from an epitaxial transfer process is studied. The as-grown InAs epilayer (10-20 nm thick) on the…”
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    Journal Article
  14. 14

    Nanoscale InGaSb Heterostructure Membranes on Si Substrates for High Hole Mobility Transistors by Takei, Kuniharu, Madsen, Morten, Fang, Hui, Kapadia, Rehan, Chuang, Steven, Kim, Ha Sul, Liu, Chin-Hung, Plis, E, Nah, Junghyo, Krishna, Sanjay, Chueh, Yu-Lun, Guo, Jing, Javey, Ali

    Published in Nano letters (11-04-2012)
    “…As of yet, III–V p-type field-effect transistors (p-FETs) on Si have not been reported, due partly to materials and processing challenges, presenting an…”
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    Journal Article
  15. 15

    InAs/GaSb strained layer superlattice detectors with nBn design by Plis, Elena, Myers, Stephen, Khoshakhlagh, Arezou, Kim, Ha Sul, Sharma, Yagya, Gautam, Nutan, Dawson, Ralph, Krishna, Sanjay

    Published in Infrared physics & technology (01-11-2009)
    “…We have investigated the electrical and optical properties of an nBn based Type-II InAs/GaSb strained layer superlattice detector as a function of absorber…”
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    Journal Article Conference Proceeding
  16. 16

    Quantum Confinement Effects in Nanoscale-Thickness InAs Membranes by Takei, Kuniharu, Fang, Hui, Kumar, S. Bala, Kapadia, Rehan, Gao, Qun, Madsen, Morten, Kim, Ha Sul, Liu, Chin-Hung, Chueh, Yu-Lun, Plis, Elena, Krishna, Sanjay, Bechtel, Hans A, Guo, Jing, Javey, Ali

    Published in Nano letters (09-11-2011)
    “…Nanoscale size effects drastically alter the fundamental properties of semiconductors. Here, we investigate the dominant role of quantum confinement in the…”
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    Journal Article
  17. 17

    MOCVD of Hierarchical C‐MoS 2 Nanobranches for ppt‐Level NO 2 Detection by Song, Jeongin, Baek, Jinwook, Cho, Jinill, Kim, Taesung, Kim, Muyoung, Kim, Ha Sul, Mun, Jihun, Kang, Sang-Woo

    Published in Small structures (01-08-2023)
    “…In the past decades, toxic gas emissions have increased significantly owing to the rapid growth of industry and road transportation. Therefore, monitoring…”
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    Journal Article
  18. 18

    Cardiovascular disease risk of bus drivers in a city of Korea by Shin, Seung Yong, Lee, Chul Gab, Song, Han Soo, Kim, Sul Ha, Lee, Hyun Seung, Jung, Min Soo, Yoo, Sang Kon

    “…To prevent the occurrence of CV events such as MI and stroke among professional drivers in Korea, bus drivers were compared to other occupations through the…”
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    Journal Article
  19. 19

    The effect of absorber doping on electrical and optical properties of nBn based type-II InAs/GaSb strained layer superlattice infrared detectors by Myers, Stephen, Plis, Elena, Khoshakhlagh, Arezou, Kim, Ha Sul, Sharma, Yagya, Dawson, Ralph, Krishna, Sanjay, Gin, Aaron

    Published in Applied physics letters (24-09-2009)
    “…We have investigated the electrical and optical properties of a nBn based InAs/GaSb strained layer superlattice detector as a function of absorber region…”
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    Journal Article
  20. 20

    Dark current improvement of the type-II InAs / GaSb superlattice photodetectors by using a gate bias control by Kim, Ha Sul, Myers, S., Klein, B., Kazemi, A., Krishna, S., Kim, Jun Oh, Lee, Sang Jun

    Published in Journal of the Korean Physical Society (01-02-2015)
    “…The dark current of a type-II InAs/GaSb strained layer superlattice photodiode with an n-i-p structure is reduced by using an active gate bias technique. To…”
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    Journal Article