Search Results - "Ha, Min Woo"
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Recent Advances in the Synthesis of Ibuprofen and Naproxen
Published in Molecules (Basel, Switzerland) (07-08-2021)“…Herein, we review the recent progress in the synthesis of representative nonsteroidal anti-inflammatory drugs (NSAIDs), ibuprofen and naproxen. Although these…”
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2
Effects of incomplete ionization on forward current–voltage characteristics of p-type diamond Schottky barrier diodes based on numerical simulation
Published in Japanese Journal of Applied Physics (01-06-2021)“…The forward current–voltage characteristics of p-type diamond pseudo-vertical Schottky barrier diodes are investigated via numerical simulation. Impact…”
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3
Design of 1.2 kV SiC trench MOSFET using tilted ion implantation for suppression of electric field crowding at the bottom of the gate oxide
Published in Japanese Journal of Applied Physics (01-01-2023)“…In this study, the effect of applying the tilted ion implantation process of a 1.2 kV SiC trench metal–oxide–semiconductor field-effect transistor on the…”
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4
Multi-floating-zone JTE for 4.5 kV SiC power devices with exponentially modulated dimensions
Published in Japanese Journal of Applied Physics (01-06-2021)“…We propose a new multi-floating-zone junction-termination-extension (MFZ-JTE) using an exponentially modulated space and width for 4.5 kV SiC power devices to…”
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5
1.2 kV SiC MOSFETs with tapered buffer oxide for the suppression of the electric field crowding effect
Published in Japanese Journal of Applied Physics (01-11-2023)“…1.2 kV silicon carbide (SiC) MOSFETs with buffered oxide, which have been developed to reduce the gate–drain charge ( Q GD ), have the problem that the…”
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6
Sensible design of open-porous spherical architectures for hybrid supercapacitors with improved high-rate capability
Published in Current applied physics (01-03-2020)“…Hybrid supercapacitors show high energy densities with good long-term cycling stability when used as energy sources. However, their poor rate performance as a…”
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7
Hydroquinone-ZnO nano-laminate deposited by molecular-atomic layer deposition
Published in Applied physics letters (23-03-2015)“…In this study, we have deposited organic-inorganic hybrid semiconducting hydroquinone (HQ)/zinc oxide (ZnO) superlattices using molecular-atomic layer…”
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8
Robust SiNx/GaN MIS-HEMTs With Crystalline Interfacial Layer Using Hollow Cathode PEALD
Published in IEEE electron device letters (01-08-2018)“…In this letter, we report gallium nitride-based metal-insulator-semiconductor high-electron-mobility transistors (GaN MIS-HEMTs) with a 16-nm-thick silicon…”
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9
Mobility Models Based on Forward Current-Voltage Characteristics of P-type Pseudo-Vertical Diamond Schottky Barrier Diodes
Published in Micromachines (Basel) (18-06-2020)“…Compared with silicon and silicon carbide, diamond has superior material parameters and is therefore suitable for power switching devices. Numerical simulation…”
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10
Effects of trench profile and self-aligned ion implantation on electrical characteristics of 1.2 kV 4H-SiC trench MOSFETs using bottom protection p-well
Published in Japanese Journal of Applied Physics (01-06-2018)“…The effects of a trench profile and self-aligned ion implantation on the electrical characteristics of 1.2 kV 4H-SiC trench MOSFETs employing a bottom…”
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11
Numerical simulation of p-type diamond Schottky barrier diodes for high breakdown voltage
Published in Japanese Journal of Applied Physics (01-06-2017)“…P-type diamond devices have high potential for power semiconductors due to their high critical field, hole mobility, and thermal conductivity. The electrical…”
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12
7-Octenyltrichrolosilane/trimethyaluminum hybrid dielectrics fabricated by molecular-atomic layer deposition on ZnO thin film transistors
Published in Japanese Journal of Applied Physics (01-06-2016)“…We demonstrate the fabrication of 7-octenytrichlorosilane (7-OTS)/trimethylaluminum (TMA) organic-inorganic hybrid films using molecular-atomic layer…”
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13
High-voltage AlGaN/GaN Schottky barrier diodes on silicon using a post-process O2 treatment
Published in Solid-state electronics (01-01-2015)“…[Display omitted] •High-voltage AlGaN/GaN SBDs on a Si substrate fabricated using a post O2 treatment.•TOF-SIMS reveals that the oxygen diffused into an AlGaN…”
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14
Pharmacogenetic Approach to Tramadol Use in the Arab Population
Published in International journal of molecular sciences (16-08-2024)“…Tramdol is one of most popular opioids used for postoperative analgesia worldwide. Among Arabic countries, there are reports that its dosage is not appropriate…”
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15
Recent Advances in Divergent Synthetic Strategies for Indole-Based Natural Product Libraries
Published in Molecules (Basel, Switzerland) (27-03-2022)“…Considering the potential bioactivities of natural product and natural product-like compounds with highly complex and diverse structures, the screening of…”
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16
Triangular-Pulse Measurement for Hysteresis of High-Performance and Flexible Graphene Field-Effect Transistors
Published in IEEE electron device letters (01-02-2014)“…We use a triangular-pulse measurement technique to obtain the hysteretic electrical characteristics of flexible graphene field-effect transistors (GFETs). To…”
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17
Repurposing and computational design of PARP inhibitors as SARS-CoV-2 inhibitors
Published in Scientific reports (29-06-2023)“…Coronavirus disease 2019 (COVID-19) is a recent pandemic that caused serious global emergency. To identify new and effective therapeutics, we employed a drug…”
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Recent Achievements in Total Synthesis for Integral Structural Revisions of Marine Natural Products
Published in Marine drugs (25-02-2022)“…A great effort to discover new therapeutic ingredients is often initiated through the discovery of the existence of novel marine natural products. Since…”
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19
Enhancement of cortisol measurement sensitivity by laser illumination for AlGaN/GaN transistor biosensor
Published in Biosensors & bioelectronics (01-07-2020)“…In this study, high electron mobility transistor (HEMT) device was used as an immuno biosensor to measure concentration of a stress hormone, cortisol, by using…”
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20
Double p-base structure for 1.2-kV SiC trench MOSFETs with the suppression of electric-field crowding at gate oxide
Published in Microelectronic engineering (15-03-2020)“…We demonstrated 1.2-kV SiC trench metal–oxide semiconductor field-effect transistors with a double p-base structure via technology computer-aided design…”
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