Search Results - "HULL, Brett A"

High Switching Performance of 1700-V, 50-A SiC Power MOSFET Over Si IGBT/BiMOSFET for Advanced Power Conversion Applications by Hazra, Samir, De, Ankan, Lin Cheng, Palmour, John, Schupbach, Marcelo, Hull, Brett A., Allen, Scott, Bhattacharya, Subhashish

“…Due to wider band gap of silicon carbide (SiC) compared to silicon (Si), MOSFET made in SiC has considerably lower drift region resistance, which is a…”
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Experimental evidence for mobile luminescence center mobility on partial dislocations in 4H-SiC using hyperspectral electroluminescence imaging by Caldwell, Joshua D., Giles, Alexander, Lepage, Dominic, Carrier, Dominic, Moumanis, Khalid, Hull, Brett A., Stahlbush, Robert E., Myers-Ward, Rachael L., Dubowski, Jan J., Verhaegen, Marc

“…We report on the formation, motion, and concentration of localized green emission centers along partial dislocations (PDs) bounding recombination-induced…”
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Performance and Stability of Large-Area 4H-SiC 10-kV Junction Barrier Schottky Rectifiers by Hull, B.A., Sumakeris, J.J., O'Loughlin, M.J., Qingchun Zhang, Richmond, J., Powell, A.R., Imhoff, E.A., Hobart, K.D., Rivera-Lopez, A., Hefner, A.R.

“…The forward and reverse bias dc characteristics, the long-term stability under forward and reverse bias, and the reverse recovery performance of 4H-SiC…”
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High power 4H–SiC pin diodes (10kV class) with record high carrier lifetime by Ivanov, Pavel A., Levinshtein, Michael E., Palmour, John W., Das, Mrinal K., Hull, Brett A.

“…The hole lifetime τp in the n-base and isothermal (pulse) current–voltage characteristics have been measured in 4H–SiC diodes with a 10kV blocking voltage…”
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High-temperature (up to 773 K) operation of 6-kV 4H-SiC junction diodes by Levinshtein, Michael E., Ivanov, Pavel A., Boltovets, Mykola S., Krivutsa, Valentyn A., Palmour, John W., Das, Mrinal K., Hull, Brett A.

“…Steady-state and transient characteristics of packaged 6-kV 4H-SiC junction diodes have been investigated in the temperature range T = 300–773 K. Analysis of…”
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Drift-free 10-kV, 20-A 4H-SiC PiN diodes by Hull, Brett A, Das, Mrinal K, Sumakeris, Joseph J, Richmond, James T, Krishnaswami, Sumi

“…As impressive as the advancement in 4H-SiC material quality has been, 4H-SiC PiN diodes continue to suffer from irreversible, forward-voltage instabilities. In…”
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Self-heating and destruction of high-voltage 4H-SiC rectifier diodes under a single short current surge pulse by Levinshtein, Michael E., Ivanov, Pavel A., Mnatsakanov, Tigran T., Palmour, John W., Das, Mrinal K., Hull, Brett A.

“…Self-heating of high-voltage (6kV class) 4H-SiC rectifier p+–n–n+ diodes under the action of a single 20μs forward current surge pulse has been studied…”
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Performance and Stability of Large-Area 4H-SiC 10-kV Junction Barrier Schottky Rectifiers : Silicon carbide devices and technology by HULL, Brett A, SUMAKERIS, Joseph J, O'LOUGHLIN, Michael J, QINGCHUN ZHANG, RICHMOND, Jim, POWELL, Adrian R, IMHOFF, Eugene A, HOBART, Karl D, RIVERA-LOPEZ, Angel, HEFNER, Allen R

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Steady state self-heating and dc current–voltage characteristics of high-voltage 4H-SiC p +–n–n + rectifier diodes by Levinshtein, Michael E., Mnatsakanov, Tigran T., Ivanov, Pavel A., Palmour, John W., Das, Mrinal K., Hull, Brett A.

“…Self-heating of high-voltage (10 kV class) 4H-SiC rectifier p +–n–n + diodes has been studied experimentally and theoretically in the dc mode. An analytical…”
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1700V 4H-SiC MOSFETs and Schottky diodes for next generation power conversion applications by Hull, B A, Henning, J, Jonas, C, Callanan, R, Olmedo, A, Sousa, Rich, Solovey, J M

“…Junction barrier Schottky (JBS) diodes and MOSFETs fabricated in 4H-SiC are described. These power devices are capable of blocking in excess of 1700 V with…”
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Drift-free 10-kV, 20-A 4H-SiC PiN diodes: Special issue on SiC and the group III nitride semiconductors by HULL, Brett A, DAS, Mrinal K, SUMAKERIS, Joseph J, RICHMOND, James T, KRISHNASWAMI, Sumi

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Self-heating and destruction of high-voltage 4H-SiC rectifier diodes under a single short current surge pulse by LEVINSHTEIN, Michael E, IVANOVO, Pavel A, MNATSAKANOV, Tigran T, PALMOUR, John W, DAS, Mrinal K, HULL, Brett A

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An investigation of the processing and properties of ohmic contacts to p-type aluminum gallium nitride by Hull, Brett A

“…The processing and properties of ohmic contacts to p-Al xGa1-xN were examined in this investigation to advance our understanding of the electrical properties…”
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An investigation of the processing and properties of ohmic contacts to p-type aluminum gallium nitride by Hull, Brett A

“…The processing and properties of ohmic contacts to p-Al xGa1−xN were examined in this investigation to advance our understanding of the electrical properties…”
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Steady state self-heating and dc current-voltage characteristics of high-voltage 4H-SiC p+-n-n+ rectifier diodes by LEVINSHTEIN, Michael E, MNATSAKANOV, Tigran T, IVANOV, Pavel A, PALMOUR, John W, DAS, Mrinal K, HULL, Brett A

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Ultra High Power 10 kV, 50 A SiC PiN Diodes by Das, Mrinal K., Hull, Brett A., Richmond, James T., Heath, Bradley, Sumakeris, Joseph J., Powell, Adrian R.

“…Ultra high power 10 kV, 50 A SiC PiN diodes have been developed with a low forward voltage drop (V F ) of 3.75 V and a fast reverse recovery time of 150 nsec…”
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Silicon carbide pin diodes as radiation detectors by Phlips, B.F., Hobart, K.D., Kub, F.J., Stahlbush, R.E., Das, M.K., Hull, B.A., De Geronimo, G., O'Connor, P.

“…We have tested the radiation detection performance of silicon carbide (SiC) pin diodes originally developed as high power diodes. These devices consist of 100…”
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High-temperature (up to 773 K) operation of 6-kV 4H-SiC junction diodes by LEVINSHTEIN, Michael E, IVANOV, Pavel A, BOLTOVETS, Mykola S, KRIVUTSA, Valentyn A, PALMOUR, John W, DAS, Mrinal K, HULL, Brett A

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A 180 Amp/4.5 kV 4H-SiC PiN Diode for High Current Power Modules by Hull, B.A., Das, M.K., Richmond, J.T., Sumakeris, J.J., Leonard, R., Palmour, J.W., Leslie, S.

“…Discrete 4H-SiC PiN diode chips have been developed for extremely high power handling applications. These diodes have a forward voltage of less than 3.2 V at…”
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Pulse evaluation of high voltage SIC diodes by O'Brien, H., Shaheen, W., Bayne, S.B., Hull, Brett A., Agarwal, A.K.

“…The U. S. Army Research Laboratory (ARL) is evaluating silicon carbide switches and diodes to determine the range of high power and pulsed power applications…”
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