Search Results - "HULICIUS, E"

Improvement of luminescence properties of n-GaN using TEGa precursor by Hubáček, T., Hospodková, A., Kuldová, K., Slavická Zíková, M., Pangrác, J., Čížek, J., Liedke, M.O., Butterilng, M., Wagner, A., Hubík, P., Hulicius, E.

“…•Growth from TEGa precursor improved luminescence and structural properties of n-GaN.•Type of carrier gas significantly influences properties of…”
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InAs/GaSb/AlSb composite quantum well structure preparation with help of reflectance anisotropy spectroscopy by Hospodková, A., Hulicius, E., Pangrác, J., Dominec, F., Mikhailova, M.P., Veinger, A.I., Kochman, I.V.

“…Magnetotransport, optical, spin-dependent and topological properties of the composite InAs/GaSb/AlSb quantum wells based on the broken-gap heterojunctions have…”
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Below band-gap optical absorption and photoluminescence excitation spectroscopy at room temperature in low-defect-density bulk GaN:Fe by Gladkov, P., Hulicius, E., Paskova, T., Preble, E., Evans, K. R.

“…We present a detailed study of the below band-gap optical absorption at room temperature in bulk semi-insulating GaN:Fe versus the Fe-doping. It was…”
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Misfit dislocation reduction in InGaAs epilayers grown on porous GaAs substrates by Dimitrakopulos, G.P., Bazioti, C., Grym, J., Gladkov, P., Hulicius, E., Pangrác, J., Pacherová, O., Komninou, Ph

“…•InxGa1−xAs epilayers were grown by MOVPE on porous GaAs substrates.•The porous substrates led to significant reduction of misfit dislocation…”
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Growth and properties of the MOVPE GaAs/InAs/GaAsSb quantum dot structures by Hospodková, A., Oswald, J., Pangrác, J., Kuldová, K., Zíková, M., Vyskočil, J., Hulicius, E.

“…This review paper summarizes some of results achieved during last years of our quantum dot (QD) research. We show that the QD shape (aspect ratio and…”
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Light emitting diodes with InAs/GaAsSb self-assembled quantum dot layer embedded in GaAs by Hazdra, P., Oswald, J., Hospodková, A., Hulicius, E., Pangrác, J.

“…Luminescence properties of metalorganic vapor phase epitaxy grown light emitting diodes (LEDs) with active InAs/GaAs quantum dot (QD) layer covered by GaAsSb…”
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Graded GaAsSb strain reducing layers covering InAs/GaAs quantum dots by Hospodková, A., Zíková, M., Pangrác, J., Oswald, J., Kuldová, K., Vyskočil, J., Hulicius, E.

“…We have grown new InAs/GaAs quantum dot (QD) structures with graded Sb concentration of GaAs(1−x)Sbx strain reducing layer (SRL). New types of GaAsSb SRLs with…”
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Structural and photoluminescent properties of low temperature InAs buffer layer grown by MOVPE on GaAs substrates by Komninou, Ph, Gladkov, P., Karakostas, Th, Pangrác, J., Pacherová, O., Vaniš, J., Hulicius, E.

“…Epitaxial growth of InAs on semi-insulating GaAs was a subject of various attempts to reduce the influence of the ~7% lattice mismatch on the InAs layer…”
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Vertical transport in type-II heterojunctions with InAs/GaSb/AlSb composite quantum wells in a high magnetic field by Mikhailova, M. P., Berezovets, V. A., Parfeniev, R. V., Danilov, L. V., Safonchik, M. O., Hospodková, A., Pangrác, J., Hulicius, E.

“…Vertical transport in type-II heterojunctions with a two-barrier AlSb/InAs/GaSb/AlSb quantum well (QW) grown by MOVPE on an n -InAs (100) substrate is…”
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Effect of Fe doping on optical properties of freestanding semi-insulating HVPE GaN:Fe by Gladkov, P., Humlíček, J., Hulicius, E., Šimeček, T., Paskova, T., Evans, K.

“…Systematic study of optical properties of undoped and Fe-doped substrates grown by hydride vapor phase epitaxy has revealed a strong dependence of the…”
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Surface processes during growth of InAs/GaAs quantum dot structures monitored by reflectance anisotropy spectroscopy by Hospodková, A., Vyskočil, J., Pangrác, J., Oswald, J., Hulicius, E., Kuldová, K.

“…The time resolved reflectance anisotropy spectroscopy (RAS) measurement at 4.2 eV was used for the optimization of technological parameters for…”
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InGaAs and GaAsSb strain reducing layers covering InAs/GaAs quantum dots by Hospodková, A., Hulicius, E., Pangrác, J., Oswald, J., Vyskočil, J., Kuldová, K., Šimeček, T., Hazdra, P., Caha, O.

“…We compare properties of InAs/GaAs quantum dots (QDs) covered by InGaAs or GaAsSb strain reducing layers (SRLs) prepared by metal organic vapor phase epitaxy…”
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Integral and local density of states of InAs quantum dots in GaAs/AlGaAs heterostructure observed by ballistic electron emission spectroscopy near one-electron ground state by Walachová, J., Zelinka, J., Leshkov, S., Šroubek, F., Pangrác, J., Hulicius, E., Vaniš, J.

“…Density of states is studied by a ballistic electron emission microscopy/spectroscopy on self-assembled InAs quantum dots embedded in GaAs/AlGaAs…”
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Influence of strain reducing layers on electroluminescence and photoluminescence of InAs/GaAs QD structures by Hospodková, A., Pangrác, J., Oswald, J., Hazdra, P., Kuldová, K., Vyskočil, J., Hulicius, E.

“…We present a comparison of photo- (PL) and electro-luminescence (EL) spectra of quantum dot (QD) structures with different strain reducing layers (SRL). Simple…”
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Diagnostic and characterization of the VCSEL diodes based on GaSb by Matulková, I., Cihelka, J., Vyskočil, J., Zelinger, Z., Hulicius, E., Šimeček, T., Civiš, S.

“…Vertical-Cavity Surface-Emitting Laser (VCSEL) diodes are among the youngest members of the semiconductor laser diode family. The main aim of our work focuses…”
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Properties of MOVPE InAs/GaAs quantum dots overgrown by InGaAs by Hospodková, A., Hulicius, E., Oswald, J., Pangrác, J., Mates, T., Kuldová, K., Melichar, K., Šimeček, T.

“…The effects of covering InAs quantum dot (QD) layer by In x Ga 1− x As thin strain-reducing layer (SRL) on QD properties were studied by photoluminescence (PL)…”
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InAs/GaAs quantum dot capping in kinetically limited MOVPE growth regime by Hospodková, A., Pangrác, J., Vyskočil, J., Oswald, J., Vetushka, A., Caha, O., Hazdra, P., Kuldová, K., Hulicius, E.

“…InAs/GaAs quantum dot (QD) properties can be significantly influenced by the growth conditions of the QD capping layer. We have studied the effect of a group…”
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Vapor pressure of germanium precursors by Pangrác, J., Fulem, M., Hulicius, E., Melichar, K., Šimeček, T., Růžička, K., Morávek, P., Růžička, V., Rushworth, S.A.

“…The vapor pressure of two germanium precursors tetrakis(methoxy)germanium (Ge(OCH 3) 4, CASRN 992-91-6) and tetrakis(ethoxy)germanium (Ge(OC 2H 5) 4, CASRN…”
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Vapour pressure measurement of metal organic precursors used for MOVPE by Fulem, M., Růžička, K., Růžička, V., Šimeček, T., Hulicius, E., Pangrác, J.

“…The paper presents methodology of vapour pressure measurement of metal organic precursors, describes two static apparatuses for vapour pressure measurement…”
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Influence of capping layer on the properties of MOVPE-grown InAs/GaAs quantum dots by Hospodková, A., Pangrác, J., Oswald, J., Hulicius, E., Kuldová, K., Vyskočil, J., Melichar, K., Šimeček, T.

“…During the capping process of InAs/GaAs quantum dots (QDs), the redistribution of In atoms decreases the height of QDs and changes their shape. These changes…”
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