Search Results - "HUI YOUN SHIN"

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  1. 1

    Enhancement in external quantum efficiency of AlGaInP red μ-LED using chemical solution treatment process by Jung, Byung Oh, Lee, Wonyong, Kim, Jeomoh, Choi, Myungshin, Shin, Hui-Youn, Joo, Minho, Jung, Sukkoo, Choi, Yoon-Ho, Kim, Moon J.

    Published in Scientific reports (25-02-2021)
    “…To investigate the effects of their surface recovery and optical properties, extremely small sized (12 µm × 12 µm mesa area) red AlGaInP micro light emitting…”
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    Journal Article
  2. 2

    In-situ STEM study on thermally induced phase transformation of magnetic (Nd0.75Ce0.25)2Fe14B ribbons by Zhu, Xiangyu, Oh Jung, Byung, Wang, Qingxiao, Hu, Yaoqiao, Choi, Myungshin, Song, Sunyong, Namkung, Seok, Kang, Namseok, Shin, Hui-Youn, Joo, Minho, Kim, M.J.

    Published in Materials & design (01-04-2022)
    “…[Display omitted] •In-situ heating scanning transmission electron microscopy (STEM) revealed phase and microstructure evolution behavior of melt-spun NdCeFeB…”
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    Journal Article
  3. 3

    Reducing dislocation density in GaN films using a cone-shaped patterned sapphire substrate by Shin, Hui-Youn, Kwon, S.K., Chang, Y.I., Cho, M.J., Park, K.H.

    Published in Journal of crystal growth (15-08-2009)
    “…The threading dislocation (TD) density in GaN films grown directly on flat sapphire substrates is typically >10 10/cm 2, which can deteriorate the properties…”
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    Journal Article
  4. 4

    Microstructural characterization of abnormal grain growth behavior of Al-doped ZnO in thin film solar cells by Shin, Hui-Youn, Joo, M. H., Moon, S. K., Moon, T. H., Park, K. H.

    Published in Surface and interface analysis (01-11-2012)
    “…The microstructure of abnormal grains in Al‐doped ZnO (AZO) films using a seed layer was examined with the aim of enhancing the performance of transparent…”
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    Journal Article Conference Proceeding
  5. 5

    Enhancing spatial resolution in Fourier transform infrared spectral image via machine learning algorithms by Lim, Mina, Park, Kyu Ho, Hwang, Jae Sung, Choi, Mikyung, Shin, Hui Youn, Kim, Hong-Kyu

    Published in Scientific reports (20-12-2023)
    “…Owing to the intrinsic signal noise in the characterization of chemical structures through Fourier transform infrared (FT-IR) spectroscopy, the determination…”
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    Journal Article
  6. 6

    Effect of oxygen incorporation in a-plane GaN on p-type ohmic contact property by Jung, Ki-Chang, Lee, Inwoo, Park, Jaehyoung, Bae, Hyojung, Kim, Chung Yi, Shin, Hui-Youn, Kim, Hyung-Gu, Jeon, Jina, Jung, S., Choi, Yoon-Ho, Lee, Jung-Soo, Ha, Jun-Seok

    Published in Japanese Journal of Applied Physics (01-09-2014)
    “…We report on the origin of the non-ohmic behavior of Ni/Au-based p-type contacts on a nonpolar a-plane GaN layer. The contact properties of Ga-polar c-plane…”
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    Journal Article
  7. 7

    Enhancement of crystallinity in ZnO:Al films using a two-step process involving the control of the oxygen pressure by Taeho Moon, Wonki Yoon, Kwang Sun Ji, Seh-Won Ahn, Minho Joo, Hui Youn Shin, Kyuho Park, Heon-Min Lee

    “…The ZnO:Al films were prepared using a two-step process through the control of oxygen pressure by DC-pulsed magnetron sputtering. The seed layers were prepared…”
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    Conference Proceeding
  8. 8

    Effect of buffer layer on the growth of GaN on Si substrate by Lee, Jeong Wook, Jung, Sung Hoon, Shin, Hui Youn, Lee, In-Hwan, Yang, Cheol-Woong, Lee, Sang Hak, Yoo, Ji-Beom

    Published in Journal of crystal growth (01-04-2002)
    “…For the epitaxial growth of GaN on Si substrate the buffer layer is essential as an anchor to achieve nucleation and duplicate orientation. In this study, AlN…”
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    Journal Article
  9. 9

    Comparison of the microstructural characterizations of GaN layers grown on Si (111) and on sapphire by Shin, Huiyoun, Jeon, Kisung, Jang, Youngil, Gang, Mingu, Choi, Myungshin, Park, Wonhwa, Park, Kyuho

    Published in Journal of the Korean Physical Society (01-10-2013)
    “…Due to the large differences in the lattice constants and the thermal expansion coefficients between GaN and Si, GaN growth on a Si substrate usually leads…”
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    Journal Article
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