Search Results - "HOUZAY, F"

Self-organized growth of regular nanometer-scale InAs dots on GaAs by Moison, J. M., Houzay, F., Barthe, F., Leprince, L., André, E., Vatel, O.

“…The deposition of InAs on GaAs proceeds first by two-dimensional (2D) growth and above a 1.75-monolayer coverage by the formation of single-crystal dots on a…”
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Interaction of atomic hydrogen with native oxides on GaAs(100) by Petit, E. J., Houzay, F., Moison, J. M.

“…GaAs (100) covered with its native oxides is exposed to increasing doses of low energy atomic hydrogen in order to test the possibility of using it for surface…”
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Self-organized growth of InAs/GaAs quantum boxes by MOISON, J. M, LEPRINCE, L, BARTHE, F, HOUZAY, F, LEBOUCHE, N, GERARD, J. M, MARZIN, J. Y

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Near-surface GaAs/Ga0.7Al0.3As quantum wells : interaction with the surface states by MOISON, J. M, ELCESS, K, HOUZAY, F, MARZIN, J. Y, GERARD, J. M, BARTHE, F, BENSOUSSAN, M

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Surface localization of the photochemical vapor deposition of SiO2 on InP at low pressure and room temperature by HOUZAY, F, MOISON, J. M, SEBENNE, C. A

“…The first stages of the chemical vapor deposition of SiO2 on chemically polished InP substrates, promoted by UV illumination at room temperature and low (≊0.01…”
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Surface segregation of third-column atoms in group III-V arsenide compounds: ternary alloys and heterostructures by MOISON, J. M, GUILLE, C, HOUZAY, F, BARTHE, F, VAN ROMPAY, M

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Epitaxial regrowth of an InAs surface on InP: an example of artificial surfaces by MOISON, J. M, BENSOUSSAN, M, HOUZAY, F

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Optimal surface cleaning of GaAs (001) with atomic hydrogen by Petit, E. J., Houzay, F.

“…Atomic hydrogen is commonly used to clean GaAs surfaces. The goals of this work are to optimize the cleaning process and to control surface reactions in order…”
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Reconstruction, step ordering, and frustration on vicinal GaAs surfaces by LEPRINCE, L, HOUZAY, F, MOISON, J. M

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Photoemission measurement of the potential step created at InAs/GaAs junctions by interfacial silicon by Moison, JM, Houzay, F, Leprince, L

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Aluminum growth on (100) indium phosphide by Houzay, F., Moison, J. M., Bensoussan, M.

“…The first detailed study of the room temperature growth of Al on the 4×2 (100) InP surface is reported. In the monolayer range, Al strongly reacts with the…”
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The interface between (100) InP and epitaxially grown Al by Houzay, F., Henoc, P., Bensoussan, M., Barthe, F.

“…The properties of epitaxially grown Al on InP(100) are investigated by i n s i t u classical surface techniques and by e x s i t u TEM and x‐ray diffraction…”
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Buildup of III-V-compound semiconductor heterojunctions: Structural and electronic properties of monolayer-thick III-V overlayers on III-V substrates by Moison, JM, Guille, C, Van Rompay M, Barthe, F, Houzay, F, Bensoussan, M

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Self-organized growth of [formula omitted] quantum boxes by Moison, J.M., Leprince, L., Barthe, F., Houzay, F., Lebouché, N., Gérard, J.M., Marzin, J.Y.

“…Spontaneous patterning of strained deposits can be put to use for fabricating quantum dots. We evaluate this technique in the case of InAs GaAs . It is shown…”
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Atomic and Electronic Structure of the 7 × 7 Reconstructed Si (111) Surface by Chadi, D. J., Bauer, R. S., Williams, R. H., Hansson, G. V., Bachrach, R. Z., Mikkelsen, J. C., Houzay, F., Guichar, G. M., Pinchaux, R., Pétroff, Y.

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Near-surface GaAs/ Ga 0.7 Al 0.3 As quantum wells: Interaction with the surface states by Moison, J. M., Elcess, K., Houzay, F., Marzin, J. Y., Gérard, J. M., Barthe, F., Bensoussan, M.

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