Search Results - "HONGLING XIAO"

Room Temperature 2DEG Mobility Above 2350 cm2/V·s in AlGaN/GaN HEMT Grown on GaN Substrate by Chu, Jiayan, Wang, Quan, Jiang, Lijuan, Feng, Chun, Li, Wei, Liu, Hongxin, Xiao, Hongling, Wang, Xiaoliang

“…A high quality Al 0.25 Ga 0.75 N/GaN high electron mobility transistor (HEMT) structure was grown on a 2-inch GaN substrate by metalorganic chemical vapor…”
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Proton-Irradiation Effects and Reliability on GaN-Based MIS-HEMTs by Zhen, Zixin, Feng, Chun, Xiao, Hongling, Jiang, Lijuan, Li, Wei

“…A comprehensive study of proton irradiation reliability on a bilayer dielectrics SiN /Al O MIS-HEMT, the common Schottky gate HEMT, and a single dielectric…”
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Properties Investigation and Damage Analysis of GaN Photoconductive Semiconductor Switch Based on SiC Substrate by Xu, Jiankai, Jiang, Lijuan, Cai, Ping, Feng, Chun, Xiao, Hongling, Wang, Xiaoliang

“…The GaN photoconductive semiconductor switches (PCSSs) with low leakage current and large on-state current are suitable for several applications, including…”
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Bibliometric analysis of functional dyspepsia research trends over the past 20 years by Wang, Xinai, Liu, Hao, Li, Wenjing, Xiao, Hongling

“…Functional dyspepsia is one of the most common functional gastrointestinal disorders that affects the physical health and quality of life of many people. Its…”
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Patient-reported outcome measures in functional dyspepsia: a systematic review and COSMIN analysis by Wang, Xinai, Fei, Yan, Li, Wenjing, Liu, Hao, Xiao, Hongling, Wu, Yaxuan, Wang, Chenqi

“…Abstract Background Functional dyspepsia (FD) as a type of disorders of brain-gut interaction (DBGI), patient self-reporting of its symptoms becomes an…”
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A hypotensive protocol of inspiratory muscle strength training: Systematic review and meta-analysis with trial sequential analysis by Li, Wenjing, Zhu, Xiaoping, Wang, Xinai, Liu, Hao, Liu, Jingying, Xiao, Hongling, Dong, Liang, Wang, Chenqi, Wu, Yaxuan

“…The aim of this study was to evaluate the hypotensive effect and optimal protocol of inspiratory muscle resistance training (IMST). Randomized controlled…”
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Interventions for reducing blood pressure in prehypertension: A meta-analysis by Li, Wenjing, Liu, Hao, Wang, Xinai, Liu, Jingying, Xiao, Hongling, Wang, Chenqi, Wu, Yaxuan

“…We aimed to address which interventions best control blood pressure (BP) and delay disease progression in prehypertension and to give recommendations for the…”
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Bipolar characteristics of AlGaN/AlN/GaN/AlGaN double heterojunction structure with AlGaN as buffer layer by Peng, Enchao, Wang, Xiaoliang, Xiao, Hongling, Wang, Cuimei, Yin, Haibo, Chen, Hong, Feng, Chun, Jiang, Lijuan, Hou, Xun, Wang, Zhanguo

“…•2DEG and 2DHG coexist in the AlGaN/AlN/GaN/AlGaN DH-structure.•The sheet densities of 2DEG and 2DHG vary with buffer Al content and GaN thickness.•The…”
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Growth and characterization of AlGaN/AlN/GaN/AlGaN double heterojunction structures with AlGaN as buffer layers by Peng, Enchao, Wang, Xiaoliang, Xiao, Hongling, Wang, Cuimei, Yin, Haibo, Chen, Hong, Feng, Chun, Jiang, Lijuan, Hou, Xun, Wang, Zhanguo

“…High electron mobility transistors (HEMTs) structures with GaN, Al0.025Ga0.975N and Al0.04Ga0.96N high resistivity (HR) buffers were grown on sapphire by metal…”
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Telomerase Template Antagonist GRN163L Disrupts Telomere Maintenance, Tumor Growth, and Metastasis of Breast Cancer by HOCHREITER, Amelia E, HONGLING XIAO, GOLDBLATT, Erin M, GRYAZNOV, Sergei M, MILLER, Kathy D, BADVE, Sunil, SLEDGE, George W, HERBERT, Brittney-Shea

“…Purpose: Maintenance of telomeres by telomerase is critical for the continuing proliferation of most advanced cancer cells. Telomerase activity has been…”
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The Influence of the Different Repair Methods on the Electrical Properties of the Normally off p-GaN HEMT by Niu, Di, Wang, Quan, Li, Wei, Chen, Changxi, Xu, Jiankai, Jiang, Lijuan, Feng, Chun, Xiao, Hongling, Wang, Qian, Xu, Xiangang, Wang, Xiaoliang

“…The influence of the repair process on the electrical properties of the normally off p-GaN high-electron-mobility transistor (HEMT) is studied in detail in…”
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Growth of GaN film on Si (111) substrate using AlN sandwich structure as buffer by Pan, Xu, Wei, Meng, Yang, Cuibai, Xiao, Hongling, Wang, Cuimei, Wang, Xiaoliang

“…A single high temperature AlN (HT-AlN) buffer has been used to relieve the stress in the growth of GaN epilayers on Si (111) substrates, but the growth of…”
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Numerical simulation of two-dimensional electron gas characteristics of a novel (InxAl1−xN/AlN)MQWs/GaN high electron mobility transistor by Li, Wei, Wang, Xiaoliang, Qu, Shenqi, Wang, Quan, Xiao, Hongling, Wang, Cuimei, Peng, Enchao, Hou, Xun, Wang, Zhanguo

“…The high electron mobility transistor (HEMT) structure employing novel InxAl1−xN/AlN multiple-quantum-wells (MQWs) as barrier layer is presented. The…”
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Theoretical analysis of induction heating in high-temperature epitaxial growth system by Mei, Shuzhe, Wang, Quan, Hao, Meilan, Xu, Jiankai, Yin, Haibo, Xiao, Hongling, Feng, Chun, Jiang, Lijuan, Wang, Xiaoliang, Liu, Fengqi, Xu, Xiangang, Wang, Zhanguo

“…The temperature uniformity and heating efficiency in a high-temperature epitaxial growth system were investigated by modeling and simulating. The finite…”
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Theoretical simulations of InGaN/Si mechanically stacked two-junction solar cell by Li, Zhidong, Xiao, Hongling, Wang, Xiaoliang, Wang, Cuimei, Deng, Qingwen, Jing, Liang, Ding, Jieqin, Hou, Xun

“…In this study, potential efficiency of InGaN/Si mechanically stacked two-junction solar cell is theoretically investigated by optimizing the band gap and…”
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Theoretical study on InxGa1-xN/GaN quantum dots solar cell by Deng, Qingwen, Wang, Xiaoliang, Yang, Cuibai, Xiao, Hongling, Wang, Cuimei, Yin, Haibo, Hou, Qifeng, Li, Jinmin, Wang, Zhanguo, Hou, Xun

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Self-consistent simulation of carrier confinement characteristics in (AlyGa1−yN/AlN)SLs/GaN/(InxGa1−xN/GaN)MQW/GaN heterostructures by Ding, Jieqin, Wang, Xiaoliang, Xiao, Hongling, Wang, Cuimei, Yin, Haibo, Chen, Hong, Feng, Chun, Jiang, Lijuan

“…► We present calculations of carrier confinement characteristics. ► An optimization of InxGa1−xN/GaN multiquantum-well (MQW) was made. ► 2DEG sheet carrier…”
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AlGaN/AlN/GaN/SiC HEMT structure with high mobility GaN thin layer as channel grown by MOCVD by Wang, Xiaoliang, Hu, Guoxin, Ma, Zhiyong, Ran, Junxue, Wang, Cuimei, Xiao, Hongling, Tang, Jian, Li, Jianping, Wang, Junxi, Zeng, Yiping, Li, Jinmin, Wang, Zhanguo

“…Enhancement of the electrical properties in an AlGaN/GaN high electron mobility transistor (HEMT) structures was demonstrated by employing the combination of a…”
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The influence of internal electric fields on the transition energy of InGaN/gaN quantum well by Guo, Lunchun, Wang, Xiaoliang, Xiao, Hongling, Wang, Baozhu

“…We present a new way to meet the amount of strain relaxation in an InGaN quantum well layer grown on relaxed GaN by calculating and measuring its internal…”
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Characteristics of high Al content AlGaN grown by pulsed atomic layer epitaxy by Pan, Xu, Wang, Xiaoliang, Xiao, Hongling, Wang, Cuimei, Yang, Cuibai, Li, Wei, Wang, Weiying, Jin, Peng, Wang, Zhanguo

“…► 3.7 μm Al 0.91Ga 0.09N epilayers was grown on sapphire (0 0 0 1) substrates by PALE. ► The crystalline quality of sample is better. ► The sample's Raman…”
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