Search Results - "HOBGOOD, H. Mcd"

Semi-insulating 6H–SiC grown by physical vapor transport by Hobgood, H. McD, Glass, R. C., Augustine, G., Hopkins, R. H., Jenny, J., Skowronski, M., Mitchel, W. C., Roth, M.

“…Semi-insulating 6H–SiC crystals have been achieved by using controlled doping with deep-level vanadium impurities. High resistivity undoped and semi-insulating…”
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Nitrogen doping and multiplicity of stacking faults in SiC by Pirouz, P., Zhang, M., Hobgood, H. McD, Lancin, M., Douin, J., Pichaud, B.

“…This paper reports on the strong enhancement of stacking fault (SF) formation in 4H-SiC by heavy nitrogen doping. The paper consists of two separate…”
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High-purity semi-insulating 4H-SiC for microwave device applications by JENNY, J. R, MALTA, D. P, MÜLLER, St. G, POWELL, A. R, TSVETKOV, V. F, HOBGOOD, H. Mcd, GLASS, R. C, CARTER, C. H

“…High-purity, semi-insulating (HPSI) 4H-SiC crystals with diameters up to 75 mm have been grown by the seeded sublimation technique without the intentional…”
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Large area SiC substrates and epitaxial layers for high power semiconductor devices — An industrial perspective by Müller, St.G., Brady, M.F., Burk, A.A., Hobgood, H.McD, Jenny, J.R., Leonard, R.T., Malta, D.P., Powell, A.R., Sumakeris, J.J., Tsvetkov, V.F., Carter, C.H.

“…We review the progress in the industrial production of SiC substrates and epitaxial layers for high power semiconductor devices. Optimization of SiC bulk…”
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Nitrogen doping and multiplicity of stacking faults in SiC: 50 years of TEM of Dislocations by PIROUZ, P, ZHANG, M, HOBGOOD, H. Mcd, LANCIN, M, DOUIN, J, PICHAUD, B

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Physical Vapor Transport Growth and Properties of SiC Monocrystals of 4H Polytype by Augustine, G., Hobgood, McD, Balakrishna, V., Dunne, G., Hopkins, R. H.

“…The physical vapor transport technique can be employed to fabricate large diameter silicon carbide crystals (up to 50 mm diameter) exhibiting uniform…”
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Boron acceptor levels in 6H-SiC bulk samples by Evwaraye, A. O., Smith, S. R., Mitchel, W. C., Hobgood, H. McD

“…Thermal admittance spectroscopy has been used to determine the ground-state energies of the boron impurity in 6H-SiC. The background doping, NA−ND, of the…”
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Electron paramagnetic resonance studies of a carbon vacancy-related defect in as-grown 4H-SiC by KONOVALOV, V. V, ZVANUT, M. E, TSVETKOV, V. F, JENNY, J. R, MÜLLER, St. G, HOBGOOD, H. Mcd

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