Search Results - "HOBART, Karl D"

Experimental observation of localized interfacial phonon modes by Cheng, Zhe, Li, Ruiyang, Yan, Xingxu, Jernigan, Glenn, Shi, Jingjing, Liao, Michael E., Hines, Nicholas J., Gadre, Chaitanya A., Idrobo, Juan Carlos, Lee, Eungkyu, Hobart, Karl D., Goorsky, Mark S., Pan, Xiaoqing, Luo, Tengfei, Graham, Samuel

“…Interfaces impede heat flow in micro/nanostructured systems. Conventional theories for interfacial thermal transport were derived based on bulk phonon…”
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Vertical GaN Junction Barrier Schottky Rectifiers by Selective Ion Implantation by Yuhao Zhang, Zhihong Liu, Tadjer, Marko J., Min Sun, Piedra, Daniel, Hatem, Christopher, Anderson, Travis J., Luna, Lunet E., Nath, Anindya, Koehler, Andrew D., Okumura, Hironori, Jie Hu, Xu Zhang, Xiang Gao, Feigelson, Boris N., Hobart, Karl D., Palacios, Tomas

“…This letter demonstrates vertical GaN junction barrier Schottky (JBS) rectifiers fabricated with novel ion implantation techniques. We used two different…”
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Control of the in-plane thermal conductivity of ultra-thin nanocrystalline diamond films through the grain and grain boundary properties by Anaya, Julian, Rossi, Stefano, Alomari, Mohammed, Kohn, Erhard, Tóth, Lajos, Pécz, Béla, Hobart, Karl D., Anderson, Travis J., Feygelson, Tatyana I., Pate, Bradford B., Kuball, Martin

“…The in-plane thermal conductivity of polycrystalline diamond near its nucleation site, which is a key parameter to an efficient integration of diamond in…”
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Tunable Thermal Energy Transport across Diamond Membranes and Diamond–Si Interfaces by Nanoscale Graphoepitaxy by Cheng, Zhe, Bai, Tingyu, Shi, Jingjing, Feng, Tianli, Wang, Yekan, Mecklenburg, Matthew, Li, Chao, Hobart, Karl D, Feygelson, Tatyana I, Tadjer, Marko J, Pate, Bradford B, Foley, Brian M, Yates, Luke, Pantelides, Sokrates T, Cola, Baratunde A, Goorsky, Mark, Graham, Samuel

“…The development of electronic devices, especially those that involve heterogeneous integration of materials, has led to increased challenges in addressing…”
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Detecting defects that reduce breakdown voltage using machine learning and optical profilometry by Gallagher, James C., Mastro, Michael A., Jacobs, Alan G., Kaplar, Robert. J., Hobart, Karl D., Anderson, Travis J.

“…Semiconductor wafer manufacturing relies on the precise control of various performance metrics to ensure the quality and reliability of integrated circuits. In…”
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Valence band offsets for CuI on (-201) bulk Ga2O3 and epitaxial (010) (Al0.14Ga0.86)2O3 by Fares, Chaker, Ren, F., Hays, David C., Gila, B. P., Tadjer, Marko, Hobart, Karl D., Pearton, S. J.

“…Thin films of copper iodide (CuI) were grown on (-201) bulk Ga2O3 and (010) epitaxial (Al0.14Ga0.86)2O3 using a copper film iodination reaction method. The…”
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Optimizing performance and yield of vertical GaN diodes using wafer scale optical techniques by Gallagher, James C., Ebrish, Mona A., Porter, Matthew A., Jacobs, Alan G., Gunning, Brendan P., Kaplar, Robert J., Hobart, Karl D., Anderson, Travis J.

“…To improve the manufacturing of vertical GaN devices for power electronics applications, the effects of defects in GaN substrates need to be better understood…”
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Substrate-Dependent Effects on the Response of AlGaN/GaN HEMTs to 2-MeV Proton Irradiation by Anderson, Travis J., Koehler, Andrew D., Greenlee, Jordan D., Weaver, Bradley D., Mastro, Michael A., Hite, Jennifer K., Eddy, Charles R., Kub, Francis J., Hobart, Karl D.

“…AlGaN/GaN high electron mobility transistors grown on Si, SiC, and sapphire substrates were exposed to 2-MeV proton irradiation in incremental fluences up to 6…”
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Using machine learning with optical profilometry for GaN wafer screening by Gallagher, James C., Mastro, Michael A., Ebrish, Mona A., Jacobs, Alan G., Gunning, Brendan P., Kaplar, Robert J., Hobart, Karl D., Anderson, Travis J.

“…To improve the manufacturing process of GaN wafers, inexpensive wafer screening techniques are required to both provide feedback to the manufacturing process…”
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Technique for the Dry Transfer of Epitaxial Graphene onto Arbitrary Substrates by Caldwell, Joshua D, Anderson, Travis J, Culbertson, James C, Jernigan, Glenn G, Hobart, Karl D, Kub, Fritz J, Tadjer, Marko J, Tedesco, Joseph L, Hite, Jennifer K, Mastro, Michael A, Myers-Ward, Rachael L, Eddy, Charles R, Campbell, Paul M, Gaskill, D. Kurt

“…To make graphene technologically viable, the transfer of graphene films to substrates appropriate for specific applications is required. We demonstrate the dry…”
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Reduced Self-Heating in AlGaN/GaN HEMTs Using Nanocrystalline Diamond Heat-Spreading Films by Tadjer, M. J., Anderson, T. J., Hobart, K. D., Feygelson, T. I., Caldwell, J. D., Eddy, C. R., Kub, F. J., Butler, J. E., Pate, B., Melngailis, J.

“…Nanocrystalline diamond (NCD) thin films are deposited as a heat-spreading capping layer on AlGaN/GaN HEMT devices. Compared to a control sample, the…”
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Atomic Layer Epitaxy AlN for Enhanced AlGaN/GaN HEMT Passivation by Koehler, Andrew D., Nepal, Neeraj, Anderson, Travis J., Tadjer, Marko J., Hobart, Karl D., Eddy, Charles R., Kub, Francis J.

“…Enhancements in AlGaN/GaN high-electron-mobility transistor (HEMT) performance have been realized through ultrathin (4 nm) AlN passivation layers, formed by…”
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Efficient Activation and High Mobility of Ion-Implanted Silicon for Next-Generation GaN Devices by Jacobs, Alan G., Feigelson, Boris N., Spencer, Joseph A., Tadjer, Marko J., Hite, Jennifer K., Hobart, Karl D., Anderson, Travis J.

“…Selective area doping via ion implantation is crucial to the implementation of most modern devices and the provision of reasonable device design latitude for…”
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Improvements in the Annealing of Mg Ion Implanted GaN and Related Devices by Anderson, Travis J., Greenlee, Jordan D., Feigelson, Boris N., Hite, Jennifer K., Hobart, Karl D., Kub, Francis J.

“…The activation of ion implanted p-type dopants in GaN is notoriously difficult as the extremely high temperatures required to activate implanted Mg also damage…”
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Degradation mechanisms of 2 MeV proton irradiated AlGaN/GaN HEMTs by Greenlee, Jordan D., Specht, Petra, Anderson, Travis J., Koehler, Andrew D., Weaver, Bradley D., Luysberg, Martina, Dubon, Oscar D., Kub, Francis J., Weatherford, Todd R., Hobart, Karl D.

“…Proton-induced damage in AlGaN/GaN HEMTs was investigated using energy-dispersive X-ray spectroscopy (EDS) and transmission electron microscopy (TEM), and…”
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Characterization of an Mg-implanted GaN p-i-n diode by Greenlee, Jordan D., Anderson, Travis J., Feigelson, Boris N., Hobart, Karl D., Kub, Francis J.

“…An Mg‐implanted p–i–n diode was fabricated and characterized. Mg activation was achieved using the multicycle rapid thermal annealing technique with rapid…”
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Nanocrystalline diamond capped AlGaN/GaN high electron mobility transistors via a sacrificial gate process by Tadjer, Marko J., Anderson, Travis J., Feygelson, Tatyana I., Hobart, Karl D., Hite, Jennifer K., Koehler, Andrew D., Wheeler, Virginia D., Pate, Bradford B., Eddy Jr, Charles R., Kub, Fritz J.

“…Top‐side integration of nanocrystalline diamond films in the fabrication sequence of AlGaN/GaN high electron mobility transistors is demonstrated. Reliable…”
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Impact of Anode Thickness on Breakdown Mechanisms in Vertical GaN PiN Diodes with Planar Edge Termination by Ebrish, Mona, Porter, Matthew, Jacobs, Alan, Gallagher, James, Kaplar, Robert, Gunning, Brendan, Hobart, Karl, Anderson, Travis

“…GaN vertical PiN diodes with different anode thicknesses were fabricated on three native GaN wafers with the same p-layer doping concentrations, and planar…”
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Electrothermal Evaluation of AlGaN/GaN Membrane High Electron Mobility Transistors by Transient Thermoreflectance by Tadjer, Marko J., Kub, Fritz J., Raad, Peter E., Komarov, Pavel L., Hobart, Karl D., Feygelson, Tatyana I., Koehler, Andrew D., Anderson, Travis J., Nath, Anindya, Pate, Bradford

“…A novel wet etch process for fabrication of large-area AlGaN/GaN membranes is reported, along with an evaluation of membrane-high electron mobility transistor…”
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Integration of polycrystalline Ga2O3 on diamond for thermal management by Cheng, Zhe, Wheeler, Virginia D., Bai, Tingyu, Shi, Jingjing, Tadjer, Marko J., Feygelson, Tatyana, Hobart, Karl D., Goorsky, Mark S., Graham, Samuel

“…Gallium oxide (Ga2O3) has attracted great attention for electronic device applications due to its ultra-wide bandgap, high breakdown electric field, and…”
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