Search Results - "HITZEL, F"

Suppression of nonradiative recombination by V-shaped pits in GaInN/GaN quantum wells produces a large increase in the light emission efficiency by HANGLEITER, A, HITZEL, F, NETZEL, C, FUHRMANN, D, ROSSOW, U, ADE, G, HINZE, P

“…Despite the high density of threading dislocations generally found in (AlGaIn)N heterostructures, the light emission efficiency of such structures is…”
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Composition dependence of polarization fields in GaInN/GaN quantum wells by Hangleiter, A., Hitzel, F., Lahmann, S., Rossow, U.

“…We report an experimental determination of the internal polarization field in GaInN/GaN quantum wells, due to piezoelectric and spontaneous polarization,…”
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Towards understanding the emission efficiency of nitride quantum wells by Hangleiter, A., Fuhrmann, D., Grewe, M., Hitzel, F., Klewer, G., Lahmann, S., Netzel, C., Riedel, N., Rossow, U.

“…The high quantum efficiency of light emission from GaInN/GaN quantum wells despite the typically large defect density still lacks a quantitative explanation…”
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In Situ Observation of Current Generation in ZnO Nanowire Based Nanogenerators Using a CAFM Integrated into an SEM by Wen, Chao, Jing, Xu, Hitzel, Frank F, Pan, Chengbin, Benstetter, Guenther, Lanza, Mario

“…In this work, we monitor in situ the movement of ZnO piezoelectric nanowires by using a conductive atomic force microscope integrated into a scanning electron…”
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Anti-localization suppresses non-radiative recombination in GaInN/GaN quantum wells by Hangleiter, A., Netzel, C., Fuhrmann, D., Hitzel, F., Hoffmann, L., Bremers, H., Rossow, U., Ade, G., Hinze, P.

“…The light emission efficiency of (AlGaIn)N heterostructures and light-emitting diodes is exceptionally high, despite the high density of threading dislocations…”
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High-resolution near-field spectroscopy investigation of GaN laterally overgrown structures on SiC by Hitzel, F., Hangleiter, A., Miller, S., Weimar, A., Brüderl, G., Lell, A., Härle, V.

“…We investigated epitaxial lateral overgrown GaN structures with different wing tilt using a spectroscopic scanning near-field optical microscope (spectroscopic…”
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Towards understanding the emission efficiency of nitride quantum wells by Hangleiter, A., Fuhrmann, D., Grewe, M., Hitzel, F., Klewer, G., Lahmann, S., Netzel, C., Riedel, N., Rossow, U.

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Influence of low-temperature interlayers on strain and defect density of epitaxial GaN layers by Rossow, U., Hitzel, F., Riedel, N., Lahmann, S., Bläsing, J., Krost, A., Ade, G., Hinze, P., Hangleiter, A.

“…The effect of GaN and In x Ga 1− x N interlayers on the strain state and defect density of GaN buffer layers is studied. The layers are grown by low pressure…”
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Dependence of electron effective mass on the subband occupation in In0.53Ga0.47As/InP quantum wells by Schneider, D., Hitzel, F., Schlachetzki, A., Boensch, P.

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Correlation of Defects and Local Bandgap Variations in GaInN/GaN/AlGaN LEDs by Hitzel, F., Hangleiter, A., Bader, S., Lugauer, H.-J., Härle, V.

“…Currently even the best available GaN device structures have an extremely high defect density. Their surprisingly small influence on the carrier recombination…”
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Anti-localization suppresses non-radiative recombination in GaInN/GaN quantum wells: Intentional and unintentional localization in InGaN by HANGLEITER, A, NETZEL, C, FUHRMANN, D, HITZEL, F, HOFFMANN, L, BREMERS, H, ROSSOW, U, ADE, G, HINZE, P

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Dependence of electron effective mass on the subband occupation in In 0.53Ga 0.47As/InP quantum wells by Schneider, D., Hitzel, F., Schlachetzki, A., Boensch, P.

“…We investigated the in-plane electron effective mass m ∗ of InGaAs/InP multi-quantum wells in dependence on the subband occupation, varied by n-doping. We…”
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Manuscrits, livres et culture livresque à Istanbul: Livres et lecture dans le monde ottoman by HITZEL, F

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Localized high-energy emissions from the vicinity of defects in high-efficiency Ga x In 1 − x N ∕ Ga N quantum wells by Hitzel, F., Klewer, G., Lahmann, S., Rossow, U., Hangleiter, A.

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Localized high-energy emissions from the vicinity of defects in high-efficiency GaxIn1-xN/GaN quantum wells by HITZEL, F, KLEWER, G, LAHMANN, S, ROSSOW, U, HANGLEITER, A

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Revealing the Defect Structure in Laterally Overgrown GaN Stripes Utilizing Photoelectrochemical Etching Techniques by Riedl, Thomas, Hitzel, Frank, Hangleiter, Andreas, Miller, Stephan, Weimar, Andreas, Brüderl, Georg, Lell, Alfred, Härle, Volker

“…Photoelectrochemical wet etching (PEC) in KOH solutions and subsequent SEM was applied to investigate the defect structure in epitaxially lateral overgrown…”
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