Search Results - "HIPWOOD, L. G"

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    Current status of large-area MOVPE growth of HgCdTe device heterostructures for infrared focal plane arrays by MAXEY, C. D, FITZMAURICE, J. C, LAU, H. W, HIPWOOD, L. G, SHAW, C. S, JONES, C. L, CAPPER, P

    Published in Journal of electronic materials (01-06-2006)
    “…This paper reviews the current status of the growth of fully doped HgCdTe (MCT) devices by metalorganic vapor phase epitaxy (MOVPE). The current reactor system…”
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    Conference Proceeding Journal Article
  2. 2

    Physical modeling of microwave transconductance and capacitances in GaAs MESFETs operated in velocity saturation by Hipwood, L.G.

    Published in IEEE transactions on electron devices (01-05-1990)
    “…Described is an analytical model applicable at high drain voltage which yields simple equations for the key small-signal equivalent circuit elements describing…”
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    Journal Article
  3. 3

    Dry etching of through substrate via holes for GaAs MMIC’s by Hipwood, L. G., Wood, P. N.

    “…Through substrate via’s are essential in many GaAs monolithic microwave integrated circuits (MMIC’s). They allow for increased circuit complexity and provide…”
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    Journal Article
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