Search Results - "HEO, Y. W"

Recent progress in processing and properties of ZnO by PEARTON, S. J, NORTON, D. P, IP, K, HEO, Y. W, STEINER, T

“…ZnO is attracting considerable attention for its possible application to UV light emitters, spin functional devices, gas sensors, transparent electronics and…”
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ZnO nanowire growth and devices by Heo, Y.W., Norton, D.P., Tien, L.C., Kwon, Y., Kang, B.S., Ren, F., Pearton, S.J., LaRoche, J.R.

“…The large surface area of ZnO nanorods makes them attractive for gas and chemical sensing, and the ability to control their nucleation sites makes them…”
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Recent advances in processing of ZnO by Pearton, S. J., Norton, D. P., Ip, K., Heo, Y. W., Steiner, T.

“…A review is given of recent results in developing improved fabrication processes for ZnO devices with the possible application to UV light emitters, spin…”
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Site-specific growth of Zno nanorods using catalysis-driven molecular-beam epitaxy by Heo, Y. W., Varadarajan, V., Kaufman, M., Kim, K., Norton, D. P., Ren, F., Fleming, P. H.

“…We report on catalyst-driven molecular beam epitaxy of ZnO nanorods. The process is site specific, as single crystal ZnO nanorod growth is realized via…”
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ZnO spintronics and nanowire devices by PEARTON, S. J, NORTON, D. P, HEO, Y. W, TIEN, L. C, IVILL, M. P, LI, Y, KANG, B. S, REN, F, KELLY, J, HEBARD, A. F

“…ZnO is a very promising material for spintronics applications, with many groups reporting room-temperature ferromagnetism in films doped with transition metals…”
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Depletion-mode ZnO nanowire field-effect transistor by Heo, Y. W., Tien, L. C., Kwon, Y., Norton, D. P., Pearton, S. J., Kang, B. S., Ren, F.

“…Single ZnO nanowire metal-oxide-semiconductor field-effect transistors (MOSFETs) were fabricated using nanowires grown by site selective molecular-beam…”
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p -type behavior in phosphorus-doped (Zn,Mg)O device structures by Heo, Y. W., Kwon, Y. W., Li, Y., Pearton, S. J., Norton, D. P.

“…The characteristics of device structures that employ phosphorus-doped (Zn,Mg)O have been examined in a effort to delineate the carrier type behavior in this…”
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Enhancement-mode thin-film field-effect transistor using phosphorus-doped (Zn,Mg)O channel by Kwon, Y., Li, Y., Heo, Y. W., Jones, M., Holloway, P. H., Norton, D. P., Park, Z. V., Li, S.

“…We report on enhancement-mode ZnO-based field-effect transistors that utilize an acceptor-doped channel. In particular, the active channel is polycrystalline…”
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Electrical characteristics of Au and Ag Schottky contacts on n-ZnO by Polyakov, A. Y., Smirnov, N. B., Kozhukhova, E. A., Vdovin, V. I., Ip, K., Heo, Y. W., Norton, D. P., Pearton, S. J.

“…Au and Ag Schottky contacts on the epiready (0001)Zn surface of bulk n-ZnO crystals show Schottky barrier heights of 0.65–0.70 eV from capacitance–voltage…”
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Transport properties of phosphorus-doped ZnO thin films by Heo, Y. W., Park, S. J., Ip, K., Pearton, S. J., Norton, D. P.

“…The doping behavior of phosphorus in ZnO thin films grown by pulsed laser deposition is examined. The transport properties of epitaxial ZnO films doped with…”
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Electrical transport properties of single ZnO nanorods by Heo, Y. W., Tien, L. C., Norton, D. P., Kang, B. S., Ren, F., Gila, B. P., Pearton, S. J.

“…Single ZnO nanorods with diameters of ∼130nm were grown on Au-coated Al2O3 substrates by catalyst-driven molecular beam epitaxy. Individual nanorods were…”
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Hydrogen incorporation and diffusivity in plasma-exposed bulk ZnO by Ip, K., Overberg, M. E., Heo, Y. W., Norton, D. P., Pearton, S. J., Stutz, C. E., Luo, B., Ren, F., Look, D. C., Zavada, J. M.

“…Hydrogen incorporation depths of >25 μm were obtained in bulk, single-crystal ZnO during exposure to H2 plasmas for 0.5 h at 300 °C, producing an estimated…”
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UV photoresponse of single ZnO nanowires by HEO, Y. W, KANG, B. S, TIEN, L. C, NORTON, D. P, REN, F, LA ROCHE, J. R, PEARTON, S. J

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Growth of ZnO thin films on c-plane Al2O3 by molecular beam epitaxy using ozone as an oxygen source by HEO, Y. W, IP, K, PEANON, S. J, NORTON, D. P, BUDAI, J. D

“…The growth of c-axis oriented ZnO thin films on c-plane Al2O3 via molecular beam epitaxy (MBE) using dilute ozone (O3) as an oxygen source was investigated…”
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Hydrogen and ozone gas sensing using multiple ZnO nanorods by KANG, B. S, HEO, Y. W, TIEN, L. C, NORTON, D. P, REN, F, GILA, B. P, PEARTON, S. J

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Charge carrier and spin doping in ZnO thin films by Norton, D.P., Ivill, M., Li, Y., Kwon, Y.W., Erie, J.M., Kim, H.S., Ip, K., Pearton, S.J., Heo, Y.W., Kim, S., Kang, B.S., Ren, F., Hebard, A.F., Kelly, J.

“…Recent efforts on doping ZnO films for charge and spin functionality are reviewed, focusing on chemical doping for charge and spin device formation. Discussion…”
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Temperature-dependent characteristics of Pt Schottky contacts on n-type ZnO by Ip, K., Heo, Y. W., Baik, K. H., Norton, D. P., Pearton, S. J., Kim, S., LaRoche, J. R., Ren, F.

“…The Schottky barrier height of Pt contacts on n-type (n∼1016 cm−3) thin film ZnO deposited by pulsed laser deposition was obtained from current–voltage…”
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Transport properties of p-type phosphorus-doped (Zn,Mg)O grown by pulsed-laser deposition by Li, Y. J., Heo, Y. W., Kwon, Y., Ip, K., Pearton, S. J., Norton, D. P.

“…We report on carrier type in phosphorus-doped (Zn,Mg)O films grown by pulsed-laser deposition under a broad range of conditions. For film growth at 500°C,…”
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Mechanical properties of ZnO epitaxial layers grown on a- and c-axis sapphire by Coleman, V. A., Bradby, J. E., Jagadish, C., Munroe, P., Heo, Y. W., Pearton, S. J., Norton, D. P., Inoue, M., Yano, M.

“…The mechanical properties of zinc oxide epitaxial layers grown on a- and c-axis sapphire have been studied by spherical nanoindentation and cross-sectional…”
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Thermal stability of ion-implanted hydrogen in ZnO by Ip, K., Overberg, M. E., Heo, Y. W., Norton, D. P., Pearton, S. J., Kucheyev, S. O., Jagadish, C., Williams, J. S., Wilson, R. G., Zavada, J. M.

“…The evolution of implanted 2H profiles in single-crystal ZnO was examined as a function of annealing temperature (500–700 °C) by secondary ion mass…”
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