Search Results - "HEIDELBERGER, G"

High-power SiO2∕AlGaN∕GaN metal-oxide-semiconductor heterostructure field-effect transistors by Kordoš, P., Heidelberger, G., Bernát, J., Fox, A., Marso, M., Lüth, H.

“…We report on SiO2∕AlGaN∕GaN metal-oxide-semiconductor heterostructure field-effect transistors (MOSHFETs), which exhibit a 6.7W∕mm power density at 7GHz…”
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Origin of improved RF performance of AlGaN/GaN MOSHFETs compared to HFETs by Marso, M., Heidelberger, G., Indlekofer, K.M., Bernat, J., Fox, A., Kordos, P., Luth, H.

“…In this paper, the influence of a 10-nm-thick silicon-dioxide layer, as a passivation or as a gate insulation, on the performance of heterojunction…”
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Comparison of AlGaN/GaN MSM Varactor Diodes Based on HFET and MOSHFET Layer Structures by Marso, M., Fox, A., Heidelberger, G., Kordos, P., Luth, H.

“…In this letter, the performance of AlGaN/GaN-based metal-semiconductor-metal (MSM) varactor diodes based on HFET and MOSHFET layer systems is investigated…”
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Comparative study on unpassivated and passivated AlGaN/GaN HFETs and MOSHFETs by Heidelberger, G., Bernát, J., Fox, A., Marso, M., Lüth, H., Gregušová, D., Kordoš, P.

“…In this comparative study we investigate AlGaN/GaN‐based unpassivated and passivated HFETs and MOSHFETs with regards to DC‐, RF‐, and power‐performance. For…”
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Performance evaluation of power control algorithms in cellular UTRA systems by Forkel, I, Seidenberg, P, Pabst, R, Heidelberger, G

“…The CDMA based UMTS transmission technology in which all users simultaneously share the same common range of spectrum gets rather affected by the system…”
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High-power Si O 2 ∕ Al Ga N ∕ Ga N metal-oxide-semiconductor heterostructure field-effect transistors by Kordoš, P., Heidelberger, G., Bernát, J., Fox, A., Marso, M., Lüth, H.

“…We report on Si O 2 ∕ Al Ga N ∕ Ga N metal-oxide-semiconductor heterostructure field-effect transistors (MOSHFETs), which exhibit a 6.7 W ∕ mm power density at…”
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New approaches for growth control of GaN-based HEMT structures by Hardtdegen, H., Steins, R., Kaluza, N., Cho, Y.S., Wirtz, K., von der Ahe, M., Bay, H.L., Heidelberger, G., Marso, M.

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New approaches for growth control of GaN-based HEMT structures: From surface science to nanoscale devices by HARDTDEGEN, H, STEINS, R, KALUZA, N, CHO, Y. S, WIRTZ, K, VON DER AHE, M, BAY, H. L, HEIDELBERGER, G, MARSO, M

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RF characterization and modeling of AlGaN/GaN based HFETs and MOSHFETs by Fox, A., Marso, M., Heidelberger, G., Kordos, P.

“…An increased RF-performance of heterojunction field-effect transistor was found to be due to passivation and in addition a SiO 2 insulation underneath the gate…”
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Comparison of AlGaN/GaN MSM varactor diodes based on HFET and MOSHFET layer structures by Marso, M., Fox, A., Heidelberger, G., Kordos, P., Luth, H.

“…In this comparative study we investigate the performance of AlGaN/GaN based MSM varactor diodes based on HFET and MOSHFET layer systems. Device fabrication…”
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Technology related issues regarding fabrication of AlGaN/GaN-based MOSHFETs with GdScO3 as dielectric by Heidelberger, G., Roeckerath, M., Steins, R., Stefaniak, M., Fox, A., Schubert, J., Kaluza, N., Marso, M., Luth, H., Kordos, P.

“…Starting out from our well established process for AlGaN/GaN HFETs, the authors discuss ways to enrich the process in order to fabricate…”
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