Search Results - "HAYWOOD, S. K"

Composting paper and grass clippings with anaerobically treated palm oil mill effluent by Zahrim, A. Y., Leong, P. S., Ayisah, S. R., Janaun, J., Chong, K. P., Cooke, F. M., Haywood, S. K.

“…Purpose The purpose of this study is to investigate the composting performance of anaerobically treated palm oil mill effluent (AnPOME) mixed with paper and…”
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Subband nonparabolicity estimated from multiple intersubband absorption in highly doped multiple quantum wells by Gupta, R., Lai, K. T., Missous, M., Haywood, S. K.

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GaSb/GaInSb quantum wells grown by metalorganic vapor phase epitaxy by HAYWOOD, S. K, CHIDLEY, E. T. R, MALLARD, R. E, MASON, N. J, NICHOLAS, R. J, WALKER, P. J, WARBURTON, R. J

“…Single and multiple quantum wells of GaSb/GaInSb were grown by metalorganic vapor phase epitaxy. X-ray diffraction on an 80 Å single well confirmed the…”
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GaAs/GaSb strained-layer heterostructures deposited by metalorganic vapor phase epitaxy by CHIDLEY, E. T. R, HAYWOOD, S. K, MALLARD, R. E, MASON, N. J, NICHOLAS, R. J, WALKER, P. J, WARBURTON, R. J

“…The growth of strained GaSb/GaAs quantum wells has been attempted for the first time (7% lattice mismatch), with the antimonide layers being constrained to…”
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Photovoltaic operation up to 270 K of a strain-compensated AlAs∕In0.84Ga0.16As∕AlAs∕InAlAs quantum well infrared photodetector by Lai, K. T., Haywood, S. K., Mohamed, A. H., Missous, M., Gupta, R.

“…We report operation up to 270 K of a strain-compensated AlAs∕In0.84Ga0.16As∕AlAs∕In0.52Al0.48As double barrier quantum well infrared photodetector, grown on an…”
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Growth of InAs by MOVPE using TBAs and TMIn by HAYWOOD, S. K, MARTIN, R. W, MASON, N. J, WALKER, P. J

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Hole trapping and interface state generation during bias-temperature stress of SiO2 layers by HAYWOOD, S. K, DE KEERSMAECKER, R. F

“…Avalanche hole injection measurements on unstressed metal-oxide-semiconductor capacitors and those having undergone bias-temperature stress (BTS) are compared…”
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THERMOPHOTOVOLTAICS: CAN THEY MAKE A SIGNIFICANT CONTRIBUTION ? by Haywood, S.K.

“…Recently, a number of research initiatives have focused on thermophotovoltaic (TPV) cells as a means of generating electricity from infra-red radiation. This…”
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3 $\mu$m intersubband quantum well photodetector (QWIP) by HAYWOOD, S. K, GUPTA, Rita, WONG, A. L. Y

“…In recent years photodetectors operating in the mid- to far infrared region of 3-15 $\mu m$ have been designed based on electron and hole intersubband…”
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Two-dimensional spin confinement in strained-layer quantum wells by MARTIN, R. W, NICHOLAS, R. J, REES, G. J, HAYWOOD, S. K, MASON, N. J, WALKER, P. J

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Growth of GaSb on GaAs/AlAs mirrors for 1.68 μm detectors by Grey, R., Mansoor, F., Haywood, S.K., Hill, G., Mason, N.J., Walker, P.J.

“…Distributed Bragg reflector mirrors (grown by MBE) are designed to give maximum reflectance at 1.68 μm. The DBR is incorporated into a resonant cavity enhanced…”
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Electric field induced blueshift of the e1-hh1 exciton transitionin a Ga As 1 − x N x ∕ Ga As ( x < 1 % ) stepped quantum well by Lim, A. C. H., Gupta, R., Haywood, S. K., Steer, M. J., Hopkinson, M., Hill, G.

“…The authors present room temperature photoluminescence and photocurrent measurements on a three layer Ga As N ∕ Ga As ∕ Al 0.35 Ga 0.65 As ( N ⩽ 1 % ) stepped…”
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Electric field induced blueshift of the e1-hh1 exciton transition in a GaAs1−xNx∕GaAs (x<1%) stepped quantum well by Lim, A. C. H., Gupta, R., Haywood, S. K., Steer, M. J., Hopkinson, M., Hill, G.

“…The authors present room temperature photoluminescence and photocurrent measurements on a three layer GaAsN∕GaAs∕Al0.35Ga0.65As (N⩽1%) stepped quantum well. A…”
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Midinfrared photoluminescence and compositional modulation in pentanary GaInAsPSb alloys grown by liquid phase epitaxy by Krier, A., Smirnov, V. M., Batty, P. J., Yin, M., Lai, K. T., Rybchenko, S., Haywood, S. K., Vasil'ev, V. I., Gagis, G. S., Kuchinskii, V. I.

“…Room temperature photoluminescence is reported from GaInAsSbP pentanary alloys grown by liquid phase epitaxy on GaSb. The epitaxial layers exhibited emission…”
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Photovoltaic operation up to 270 K of a strain-compensated AlAs ∕ In 0.84 Ga 0.16 As ∕ AlAs ∕ InAlAs quantum well infrared photodetector by Lai, K. T., Haywood, S. K., Mohamed, A. H., Missous, M., Gupta, R.

“…We report operation up to 270 K of a strain-compensated AlAs ∕ In 0.84 Ga 0.16 As ∕ AlAs ∕ In 0.52 Al 0.48 As double barrier quantum well infrared…”
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Use of a three-layer quantum-well structure to achieve an absorption edge blueshift by Stavrinou, P. N., Haywood, S. K., Parry, G.

“…Theoretical calculations are used to propose a novel structure for a quantum-well electro-optic device which gives a large blueshift of the absorption edge on…”
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An investigation of GaSb/GaAs thermophotovoltaic cells by Fan, Q., Lim, A.L.C., Conibeer, G.J., Bumby, C.W., Shields, P.A., Nicholas, R.J., Haywood, S.K.

“…The effect of growth conditions on the electrical and optical properties of p-GaSb/n-GaAs junctions grown by MOVPE has been studied. Low growth temperature…”
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InAs passivated GaSb thermo-photovoltaic cells on a GaAs substrate grown by MOVPE by Bumby, C. W., Fan, Q., Shields, P. A., Nicholas, R. J., Haywood, S. K., May, L.

“…The high cost of Gallium Antimonide (GaSb) substrates offers a major obstacle to the commercial uptake of thermophotovoltaic technology. We present results on…”
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InAs passivated GaSb thermophotovoltaic cells on a GaAs substrate grown by MOVPE by BUMBY, C. W, FAN, Q, SHIELDS, P. A, NICHOLAS, R. J, HAYWOOD, S. K, MAY, L

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Type-II InAs x Sb 1 − x / InAs quantum dots for midinfrared applications: Effect of morphology and composition on electronic and optical properties by Yeap, G. H., Rybchenko, S. I., Itskevich, I. E., Haywood, S. K.

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