Search Results - "HAWKINS, D. S"

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  1. 1

    Parameningeal rhabdomyosarcoma in pediatric age: results of a pooled analysis from North American and European cooperative groups by Merks, J.H.M., De Salvo, G.L., Bergeron, C., Bisogno, G., De Paoli, A., Ferrari, A., Rey, A., Oberlin, O., Stevens, M.C.G., Kelsey, A., Michalski, J., Hawkins, D.S., Anderson, J.R.

    Published in Annals of oncology (01-01-2014)
    “…Parameningeal (PM) site is a well-known adverse prognostic factor in children with localized rhabdomyosarcoma (RMS). To identify risk factors associated with…”
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    Journal Article
  2. 2

    Record quantum efficiency from strain compensated superlattice GaAs/GaAsP photocathode for spin polarized electron source by Biswas, Jyoti, Cultrera, Luca, Liu, Wei, Wang, Erdong, Skaritka, John, Kisslinger, Kim, Hawkins, S. D., Lee, S. R., Klem, J. F.

    Published in AIP advances (01-08-2023)
    “…Photocathodes based on GaAs and other III–V semiconductors are capable of producing highly spin-polarized electron beams. GaAs/GaAsP superlattice photocathodes…”
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    Journal Article
  3. 3

    Anomalously large resistance at the charge neutrality point in a zero-gap InAs/GaSb bilayer by Yu, W, Clericò, V, Fuentevilla, C Hernández, Shi, X, Jiang, Y, Saha, D, Lou, W K, Chang, K, Huang, D H, Gumbs, G, Smirnov, D, Stanton, C J, Jiang, Z, Bellani, V, Meziani, Y, Diez, E, Pan, W, Hawkins, S D, Klem, J F

    Published in New journal of physics (31-05-2018)
    “…We report here our recent electron transport results in spatially separated two-dimensional electron and hole gases with nominally degenerate energy subbands,…”
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    Journal Article
  4. 4
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    Minority carrier lifetime and dark current measurements in mid-wavelength infrared InAs0.91Sb0.09 alloy nBn photodetectors by Olson, B V, Kim, J K, Kadlec, E A, Klem, J F, Hawkins, S D, Leonhardt, D, Coon, W T, tune, T R, Cavaliere, M A, Tauke-Pedretti, A, Shaner, E A

    Published in Applied physics letters (02-11-2015)
    “…Carrier lifetime and dark current measurements are reported for a mid-wavelength infrared InAs0.91Sb0.09 alloy nBn photodetector. Minority carrier lifetimes…”
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    Journal Article
  6. 6

    Pushing the performance limits of long wavelength interband cascade lasers using innovative quantum well active regions by Shen, Yixuan, Massengale, J. A., Yang, Rui Q., Hawkins, S. D., Muhowski, A. J.

    Published in Applied physics letters (24-07-2023)
    “…We report significantly enhanced device performance in long wavelength interband cascade lasers (ICLs) by employing a recently proposed innovative quantum well…”
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    Journal Article
  7. 7
  8. 8

    Long wavelength interband cascade lasers by Massengale, J. A., Shen, Yixuan, Yang, Rui Q., Hawkins, S. D., Klem, J. F.

    Published in Applied physics letters (28-02-2022)
    “…InAs-based interband cascade lasers (ICLs) can be more easily adapted toward long wavelength operation than their GaSb counterparts. Devices made from two…”
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    Journal Article
  9. 9

    Time-resolved optical measurements of minority carrier recombination in a mid-wave infrared InAsSb alloy and InAs/InAsSb superlattice by Olson, B. V., Shaner, E. A., Kim, J. K., Klem, J. F., Hawkins, S. D., Murray, L. M., Prineas, J. P., Flatté, M. E., Boggess, T. F.

    Published in Applied physics letters (27-08-2012)
    “…Measurements of carrier recombination rates using time-resolved differential transmission are reported for an unintentionally doped mid-wave infrared InAsSb…”
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    Journal Article
  10. 10

    Effects of doping and minority carrier lifetime on mid-wave infrared InGaAs/InAsSb superlattice nBn detector performance by Newell, A. T., Logan, J. V., Carrasco, R. A., Alsaad, Z. M., Hains, C. P., Duran, J. M., Ariyawansa, G., Balakrishnan, G., Maestas, D., Morath, C. P., Hawkins, S. D., Hendrickson, A., Webster, P. T.

    Published in Applied physics letters (24-04-2023)
    “…The effect of majority carrier concentration and minority carrier lifetime on the performance of mid-wave infrared ( λ cutoff = 5.5   μ m ) nBn detectors with…”
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    Journal Article
  11. 11

    Effects of layer thickness and alloy composition on carrier lifetimes in mid-wave infrared InAs/InAsSb superlattices by Aytac, Y., Olson, B. V., Kim, J. K., Shaner, E. A., Hawkins, S. D., Klem, J. F., Flatté, M. E., Boggess, T. F.

    Published in Applied physics letters (14-07-2014)
    “…Measurements of carrier recombination rates using a time-resolved pump-probe technique are reported for mid-wave infrared InAs/InAs1−xSbx type-2 superlattices…”
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    Journal Article
  12. 12

    Inactivation of p53 enhances sensitivity to multiple chemotherapeutic agents by HAWKINS, D. S, DEMERS, G. W, GALLOWAY, D. A

    Published in Cancer research (Chicago, Ill.) (15-02-1996)
    “…Many tumor types have p53 and/or RB mutations, and it is unclear what role the mutations of these tumor suppressor genes have on the efficacy of…”
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    Journal Article
  13. 13

    Enhanced infrared detectors using resonant structures combined with thin type-II superlattice absorbers by Goldflam, M. D., Kadlec, E. A., Olson, B. V., Klem, J. F., Hawkins, S. D., Parameswaran, S., Coon, W. T., Keeler, G. A., Fortune, T. R., Tauke-Pedretti, A., Wendt, J. R., Shaner, E. A., Davids, P. S., Kim, J. K., Peters, D. W.

    Published in Applied physics letters (19-12-2016)
    “…We examined the spectral responsivity of a 1.77 μm thick type-II superlattice based long-wave infrared detector in combination with metallic nanoantennas…”
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    Journal Article
  14. 14
  15. 15

    Auger recombination in long-wave infrared InAs/InAsSb type-II superlattices by Olson, B. V., Grein, C. H., Kim, J. K., Kadlec, E. A., Klem, J. F., Hawkins, S. D., Shaner, E. A.

    Published in Applied physics letters (28-12-2015)
    “…The Auger lifetime is a critical intrinsic parameter for infrared photodetectors as it determines the longest potential minority carrier lifetime and…”
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    Journal Article
  16. 16

    Monolayer-by-monolayer compositional analysis of InAs/InAsSb superlattices with cross-sectional STM by Wood, M.R., Kanedy, K., Lopez, F., Weimer, M., Klem, J.F., Hawkins, S.D., Shaner, E.A., Kim, J.K.

    Published in Journal of crystal growth (01-09-2015)
    “…We use cross-sectional scanning tunneling microscopy (STM) to reconstruct the monolayer-by-monolayer composition profile across a representative subset of…”
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    Journal Article
  17. 17

    Effects of electron doping level on minority carrier lifetimes in n-type mid-wave infrared InAs/InAs1−xSbx type-II superlattices by Kadlec, E. A., Olson, B. V., Goldflam, M. D., Kim, J. K., Klem, J. F., Hawkins, S. D., Coon, W. T., Cavaliere, M. A., Tauke-Pedretti, A., Fortune, T. R., Harris, C. T., Shaner, E. A.

    Published in Applied physics letters (26-12-2016)
    “…The minority carrier lifetime (τMC ) and equilibrium electron concentration (i.e., the doping level, n 0) are both important values that directly determine…”
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    Journal Article
  18. 18

    Advances in Long Wavelength Interband Cascade Lasers by Massengale, J. A., Shen, Yixuan, Yang, R. Q., Hawkins, S. D., Klem, J. F.

    “…We demonstrate significantly improved performance of InAs-based interband cascade lasers (ICLs) operating in extended wavelength regions covering 10-13\ \mu…”
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    Conference Proceeding
  19. 19

    McMillan-Rowell like oscillations in a superconductor-InAs/GaSb-superconductor junction by Shi, Xiaoyan, Yu, Wenlong, Hawkins, S. D., Klem, J. F., Pan, W.

    Published in Applied physics letters (03-08-2015)
    “…We have fabricated a superconductor (Ta)-InAs/GaSb bilayer-superconductor (Ta) junction device that has a long mean free path and can preserve the wavelike…”
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    Journal Article
  20. 20

    Far infrared edge photoresponse and persistent edge transport in an inverted InAs/GaSb heterostructure by Dyer, G. C., Shi, X., Olson, B. V., Hawkins, S. D., Klem, J. F., Shaner, E. A., Pan, W.

    Published in Applied physics letters (04-01-2016)
    “…Direct current (DC) transport and far infrared photoresponse were studied an InAs/GaSb double quantum well with an inverted band structure. The DC transport…”
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    Journal Article