Search Results - "HASENBERG, T. C"

Recent advances in Sb-based midwave-infrared lasers by Hasenberg, T.C., Miles, R.H., Kost, A.R., West, L.

“…Several midwave-infrared (MWIR) lasers have been demonstrated, including 2.8-, 3.1-, 3.2-, 3.4-, 4.1-, and 4.3-/spl mu/m diodes. The devices utilize…”
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Mid-wave infrared diode lasers based on GaInSb/InAs and InAs/AlSb superlattices by Chow, D. H., Miles, R. H., Hasenberg, T. C., Kost, A. R., Zhang, Y.-H., Dunlap, H. L., West, L.

“…We report the characterization of a set of broad-area semiconductor diode lasers with mid-wave infrared (3–5 μm) emission wavelengths. The active region of…”
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Combined local and carrier transport optical nonlinearities in a hetero n-i-p-i structure by KOST, A, JUPINA, M, GARMIRE, E, HASENBERG, T. C

“…Nonlinear optical effects have been measured in a novel hetero n-i-p-i structure with strained InAs/GaAs superlattices as the quantum wells. For intensities…”
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Ion‐induced topography, depth resolution, and ion yield during secondary ion mass spectrometry depth profiling of a GaAs/AlGaAs superlattice: Effects of sample rotation by Cirlin, Eun‐Hee, Vajo, John J., Doty, Robert E., Hasenberg, T. C.

“…Effects of sample rotation and sputtering conditions on the depth resolution and ion yield during secondary ion mass spectrometry (SIMS) sputter depth profiles…”
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Linear optical properties of quantum wells composed of all-binary InAs/GaAs short-period strained-layer superlattices by HASENBERG, T. C, MCCALLUM, D. S, HUANG, X. R, DAWSON, M. D, BOGGESS, T. F, SMIRL, A. L

“…The linear optical properties of a variety of (InAs/GaAs)-GaAs multiple quantum well structures, where each well consists of a highly strained InAs/GaAs…”
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Optical control of microwaves with semiconductor n-i-p-i structures by KOST, A, WEST, L, HASENBERG, T. C, WHITE, J. O, MATLOUBIAN, M, VALLEY, G. C

“…We control the microwave transmission of a GaAs n-i-p-i structure by illuminating it with a cw argon ion laser. Tests in a broadband microwave modulator wave…”
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InAs/GaAs short-period strained-layer superlattice modulators grown using advanced digital reflection high-energy electron diffraction techniques by Hasenberg, T.C., Chen, P., Madhukar, A., Kost, A.R., Visher, J., Konkar, A.

“…We report the growth optimization of multiple quantum well and modulator samples containing InAs/GaAs short-period strained-layer superlattice (SPSLS) well…”
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Design and measurement of an MQW nipi waveguide modulator for optoelectronic integrated circuits by Koehler, S.D., Garmire, E.M., Kost, A.R., Yap, D., Docter, D.P., Hasenberg, T.C.

“…A procedure for optimizing MQW hetero-nipi waveguide phase modulators is presented that includes both drive voltage and frequency response. Experimental phase…”
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Low threshold, high T0 InGaAsP/InP 1.3μm lasers grown on p-type InP substrates by HASENBERG, T. C, GARMIRE, E

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III-V interband 5.2 μm laser operating at 185 K by Flatté, Michael E., Hasenberg, T. C., Olesberg, J. T., Anson, S. A., Boggess, Thomas F., Yan, Chi, McDaniel, D. L.

“…We report the operation of a III-V interband laser at a wavelength beyond 5 μm and temperatures above 90 K. The active region consists of a strain compensated…”
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Limiting factors for secondary ion mass spectrometry profiling by Cirlin, Eun‐Hee, Vajo, John J., Hasenberg, T. C.

“…Understanding the limitations of depth profiling with ion sputtering is essential for accurate measurements of atomically abrupt interfaces and ultra‐shallow…”
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Theoretical performance of mid-infrared broken-gap multilayer superlattice lasers by Flatté, Michael E., Olesberg, J. T., Anson, S. A., Boggess, Thomas F., Hasenberg, T. C., Miles, R. H., Grein, C. H.

“…We present calculations of the differential gain and threshold current densities for a 3.7 μm multiple quantum well structure consisting of a “well” composed…”
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Multiple quantum wells consisting of InAs/GaAs short‐period strained‐layer superlattice wells for 1.3–1.55 μm photonic applications by Hasenberg, T. C.

“…Solid source molecular‐beam epitaxy has been employed to grow InAs/GaAs short period strained‐layer superlattices (SPSLS) on InP substrates, and multiple…”
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Carrier recombination dynamics in a (GaInSb/InAs)/AlGaSb superlattice multiple quantum well by McCahon, S. W., Anson, S. A., Jang, D.-J., Flatté, M. E., Boggess, Thomas F., Chow, D. H., Hasenberg, T. C., Grein, C. H.

“…We have used the 830 nm, subpicosecond output of a mode-locked Ti:sapphire laser, together with subpicosecond 3.55 μm pulses from a synchronously pumped…”
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Optimization of active regions in midinfrared lasers by Olesberg, J. T., Flatté, Michael E., Brown, B. J., Grein, C. H., Hasenberg, T. C., Anson, S. A., Boggess, Thomas F.

“…The ideal performance of bulk, quantum well, and superlattice active regions for III–V interband midinfrared lasers are compared according to the maximum net…”
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Hot carrier dynamics in a (GaInSb/InAs)/GaInAlAsSb superlattice multiple quantum well measured with mid-wave infrared, subpicosecond photoluminescence upconversion by Jang, D.-J., Olesberg, J. T., Flatté, M. E., Boggess, Thomas F., Hasenberg, T. C.

“…We have extended the technique of subpicosecond photoluminescence upconversion to the mid-wave infrared spectral region and have used this system to…”
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Experimental and theoretical density-dependent absorption spectra in (GaInSb/InAs)/AlGaSb superlattice multiple quantum wells by Olesberg, J. T., Anson, S. A., McCahon, S. W., Flatté, Michael E., Boggess, Thomas F., Chow, D. H., Hasenberg, T. C.

“…A broadly tunable, ultrafast optical parametric oscillator is used to measure carrier-density-dependent absorption spectra in a 340-meV band gap…”
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All-binary InAs/GaAs optical waveguide phase modulator at 1.06 μm by Hasenberg, T.C., Koehler, S.D., Yap, D., Kost, A., Garmire, E.M.

“…We demonstrate the use of multiple [(InAs) (GaAs)]/GaAs short-period strained-layer superlattice quantum wells for optical waveguide modulation at 1.06 μm. We…”
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Molecular beam epitaxy growth and characterization of broken-gap (type II) superlattices and quantum wells for midwave-infrared laser diodes by Hasenberg, T. C., Day, P. S., Shaw, E. M., Magarrell, D. J., Olesberg, J. T., Yu, C., Boggess, Thomas F., Flátte, M. E.

“…We have developed a broken-gap (type II) quantum well active region for midwave infrared interband lasers which exhibits a significantly increased Auger…”
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Operating characteristics of InGaAs-GaAs MQW hetero-nipi waveguide modulators by Koehler, S.D., Garmire, E.M., Kost, A.R., Yap, D., Docter, D.P., Hasenberg, T.C.

“…We report frequency response measurements of optical MQW nipi waveguide modulators, observing a -3-dB bandwidth as high as 110 MHz. These devices have only…”
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